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DTC144T series
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
AEC-Q101 Qualified
Parameter
Value
lOutline
VMT3
EMT3
VCEO
50V
IC 100mA
 
 
R1 47kΩ
  
DTDCT1C4144T4MTMFHA
(SC-105AA)
DTDCT1C4144T4ETFERA
SOT-416(SC-75A)
lFeatures
UMT3
SMT3
1) Built-In Biasing Resistor
2) Built-in bias resistors enable the configuration of  
 
 an inverter circuit without connecting external
 input resistors (see inner circuit) .
3) The bias resistors consist of thin-film resistors
DTDCT1C4144T4UTAUFARA
DTDCT1C4144T4KTAKFARA
SOT-323(SC-70)
SOT-346(SC-59)
                            
 with complete isolation to allow negative biasing
 of the input. They also have the advantage of
lInner circuit
 completely eliminating parasitic effects.
4) Only the on/off conditions need to be set
 for operation, making the circuit design easy.
5) Complementary PNP Types: DTA144T series
6) Complex transistors: UMH14N/FIHMAH/1I4MAH/ 14AFRA /
 EMMHH1155F/HIMAH/1IM5AH15NAPFNRtAyp(eNPN type)
7) Lead Free/RoHS Compliant.
lApplication
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
B: BASE
C: COLLECTOR
E: EMITTER
lPackaging specifications
Part No.
Package
Package
size
DTTCC114444TTMMFHA
DTTCC114444TTEEFRA
DTTCC114444TTUUAAFRA
DTTCC114444TTKKAAFRA
VMT3
EMT3
UMT3
SMT3
1212
1616
2021
2928
                      
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
T2L 180
8
8000
06
TL 180
8
3000
06
T106
180
8
3000
06
T146
180
8
3000
06
                                                                                        
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© 2012 ROHM Co., Ltd. All rights reserved.
1/7
20121023 - Rev.001

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DTC144T series
 
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
DDTTCC114444TTMMFHA
DDTTCC114444TTEEFRA
DDTTCC114444TTUUAAFRA
DDTTCC114444TTKKAAFRA
Junction temperature
Range of storage temperature
                Datasheet
Symbol
VCBO
VCEO
VEBO
IC
PD*1
Tj
Tstg
Values
50
50
5
100
150
150
200
200
150
-55 to +150
Unit
V
V
V
mA
mW
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Collector-base breakdown
voltage
BVCBO IC = 50μA
Collector-emitter breakdown
voltage
BVCEO IC = 1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Input resistance
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
IE = 50μA
VCB = 50V
VEB = 4V
IC / IB = 5mA / 0.5mA
VCE = 5V, IC = 1mA
-
Transition frequency
f
*2
T
VCE = 10V, IE = -5mA,
f = 100MHz
*1 Each terminal mounted on a reference footprint
*2 Characteristics of built-in transistor
Values
Unit
Min. Typ. Max.
50 -
-V
50 -
-
5- -
- - 0.5
- - 0.5
- - 0.3
100 250 600
32.9 47 61.1
V
V
μA
μA
V
-
- 250 - MHz
                                            
 
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© 2012 ROHM Co., Ltd. All rights reserved.
2/7
                                        
20121023 - Rev.001

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DTC144T series
 
lElectrical characteristic curves(Ta=25)
        
Datasheet
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics
Fig.3 DC Current gain vs. Collector Current
Fig.4 Collector-emitter saturation voltage vs.
Collector Current
                                                                                          
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© 2012 ROHM Co., Ltd. All rights reserved.
3/7
20121023 - Rev.001