INK0001AC1.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 INK0001AC1 데이타시트 다운로드

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INK0001AX SERIES
High speed switching
Silicon N-channel MOSFET
DESCRIPTION
INK0001AX is a Silicon N-channel MOSFET.
This product is most suitable for low voltage
use such as portable machinery , because of
low voltage drive and low on resistance.
FEATURE
・Input impedance is high, and not necessary to
consider a drive electric current.
・Drive voltage 2.5V
・Low on Resistance.
RDS(ON)=3.5Ω(TYP) @ID=100mA, VGS=4.0V
・High speed switching.
・Small package for easy mounting.
APPLICATION
High speed switching , Analog switching
EQUIVALENT CIRCUIT
D
G
S
MARKING
K・1
OUTLINE DRAWING (Unit:mm)
INK0001AU1
1.5
0.35 0.8 0.35
JEITA:SC-75A
JEDEC:―
② ③ TERMINAL CONNECTOR
①:GATE
②:SOURCE
③:DRAIN
INK0001AM1
2.1
0.425 1.25 0.425
②③
JEITA:SC-70
JEDEC:―
TERMINAL CONNECTOR
①:GATE
②:SOURCE
③:DRAIN
INK0001AC1
2.8
0.65 1.5
0.65
JEITA:SC-59
JEDEC:Similar to TO-236
② ③ TERMINAL CONNECTOR
①:GATE
②:SOURCE
③:DRAIN
ISAHAYA ELECTRONICS CORPORATION

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INK0001AX SERIES
High speed switching
Silicon N-channel MOSFET
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Drain-source voltage
Gate-source voltage
Drain current(DC)
Drain current(Pulse)
Total power dissipation
Channel temperature
Range of Storage temperature
INK0001AU1
150
※1:Pw≦10µs, Duty cycle≦1%
ELECTRICAL CHARACTERISTICS(Ta=25℃)
RATING
INK0001AM1
50
±8
100
400(※1)
+150
-55~+150
200
SYMBOL
V(BR)DSS
IGSS
IDSS
Vth
| Yfs |
RDS(ON)
Ciss
Coss
ton
toff
PARAMETER
TEST CONDITION
Drain-source breakdown voltage
Gate-source leak current
Zero gate voltage drain current
Gate threshold voltage
Forward transfer admittance
Static drain-source on-state resistance
Input capacitance
Output capacitance
Switching time
ID=100µA,VGS=0V
VGS=±5V,VDS=0V
VDS=50V,VGS=0V
ID=250µA,VDS=VGS
VDS=10V,ID=0.1A
ID=100mA,VGS=4.0V
VDS=10V,VGS=0V,f=1MHz
VDD=5V,ID=10mA
VGS=0~5V
MIN
50
-
-
0.6
-
-
-
-
-
-
INK0001AC1
LIMIT
TYP
-
-
-
-
250
3.5
24
5
11
50
MAX
-
±0.5
1.0
1.2
-
-
-
-
-
-
UNIT
V
V
mA
mA
mW
UNIT
V
µA
µA
V
mS
Ω
pF
ns
Switching time test condition
Test circuit
5V IN
0 50Ω
10μs
VDD=5V
Duty1%
Common source
Ta=25
OUT
Input
RL Waveform
VDD
5V
0V
VDD
Output
Waveform
VDS(ON
10%
90%
10%
90%
tr
ton
tf
toff
ISAHAYA ELECTRONICS CORPORATION

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INK0001AX SERIES
TYPICAL CHARACTERISTICS
High speed switching
Silicon N-channel MOSFET
Ta=25℃
100
1.6V
80
ID - VDS
1.5V
1.4V
60
40
20
0
0
1.3V
1.2V
5
Drain-Source voltage VDS (V)
1.1V
VGS=1.0V
10
Ta=25℃ ID - VDS(Low voltage region)
1
1.0V
0.8
0.95V
0.6
0.4
0.2
0
0
0.9V
0.85V
VGS=0.8V
0.1 0.2 0.3 0.4
Drain-Source voltage VDS (V)
0.5
IDR - VDS
100
VGS=0V
Ta=75℃
25℃
-25℃
10
1
0 -0.5 -1 -1.5
Drain-Source voltage VDS (V)
1000
VDS=10V
|Yfs| - ID
100
Ta=75℃
25℃
10 -25℃
-2
1
1 10 100 1000
Drain current ID (mA)
1000
VDS=10V
ID - VGS
100
10
1
0
Ta=75℃
25℃
-25℃
1234
Gate-Source voltage VGS (V)
100
VGS=4V
RDS(ON) - ID
10
5
1
0.1
1
Ta=75℃
25℃
-25℃
10 100
Drain current ID (mA)
1000
ISAHAYA ELECTRONICS CORPORATION

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INK0001AX SERIES
High speed switching
Silicon N-channel MOSFET
RDS(ON) - VGS
100
ID=100mA
10
Ta=75℃
25℃
-25℃
1
0 2 4 6 8 10
Gate-Source voltage VGS (V)
10000
1000
toff
tf
t - ID
Ta=25℃
VDD=5V
VGS=0~5V
100
10 ton
tr
1
0.1
1 10
Drain current ID (mA)
100
2
ID=250uA
VDS=VGS
1.5
Vth - Ta
1
0.5
0
-50
-25 0
25 50 75
Ambient Temperature Ta (℃)
100
C - VDS
100
Ciss
10
Coss
Ta=25℃
VGS=0V
1
0.1 1 10
Drain-Source voltage VDS (V)
100
ISAHAYA ELECTRONICS CORPORATION

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.2016