K03H1202.pdf 데이터시트 (총 14 페이지) - 파일 다운로드 K03H1202 데이타시트 다운로드

No Preview Available !

IKA03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled
HE diode
C
Designed for:
- TV – Horizontal Line Deflection
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Integrated anti-parallel diode
- Eoff optimized for IC =3A
G
E
PG-TO220-3-31
(FullPAK)
PG-TO220-3-34
(FullPAK)
Qualified according to JEDEC2 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IKA03N120H2
IKA03N120H2
VCE
1200V
1200V
IC
3A
3A
Eoff
0.15mJ
0.15mJ
Tj
150C
150C
Marking
Package
K03H1202 PG-TO-220-3-31
K03H1202 PG-TO-220-3-34
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector peak current (VGE = 15V)
TC = 100C, f = 32kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150C
Diode forward current
TC = 25C
TC = 100C
Gate-emitter voltage
Power dissipation
TC = 25C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Isolation Voltage
Symbol
VCE
IC
ICpuls
-
IF
VGE
Ptot
Tj , Tstg
-
Visol
Value
1200
8.2
9
9
Unit
V
A
9.6
3.9
20
29
-40...+150
260
2500
V
W
C
Vrms
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.3 17.07.2013

No Preview Available !

IKA03N120H2
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction - case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
4.3
5.8
62
Unit
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V(BR)CES
VCE(sat)
VGE=0V, IC=300A
VGE = 15V, IC=3A
Tj=25C
Tj=150C
VGE = 10V, IC=3A,
Tj=25C
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
VF
VGE(th)
ICES
IGES
gfs
VGE = 0, IF=3A
Tj=25C
Tj=150C
IC=90A,VCE=VGE
VCE=1200V,VGE=0V
Tj=25C
Tj=150C
VCE=0V,VGE=20V
VCE=20V, IC=3A
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=3A
VGE=15V
min.
1200
-
-
-
-
-
2.1
-
-
-
-
-
-
-
-
-
Value
Unit
Typ. max.
- -V
2.2 2.8
2.5 -
2.4 -
1.55 -
1.6 -
3 3.9
A
- 20
- 80
- 100 nA
2 -S
205 - pF
24 -
7-
8.6 - nC
7 - nH
Power Semiconductors
2
Rev. 2.3 17.07.2013

No Preview Available !

IKA03N120H2
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
trr
Qrr
Irrm
diF/dt
Tj=25C,
VCC=800V,IC=3A,
VGE=0V/15V,
RG=82,
L2)=180nH,
C2)=40pF
Energy losses include
“tail” and diode 3)
reverse recovery.
Tj=25C,
VR=800V, IF=3A,
RG=82
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
9.2
5.2
281
29
0.14
0.15
0.29
52
0.23
9.3
723
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/s
Switching Characteristic, Inductive Load, at Tj=150 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
trr
Qrr
Irrm
diF/dt
Tj=150C
VCC=800V, IC=3A,
VGE=0V/15V,
RG=82,
L2)=180nH,
C2)=40pF
Energy losses include
“tail” and diode 3)
reverse recovery.
Tj=150C
VR=800V, IF=3A,
RG=82
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
9.4
6.7
340
63
0.22
0.26
0.48
112
0.52
11
661
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/s
2) Leakage inductance Land stray capacity Cdue to dynamic test circuit in figure E
3) Commutation diode from device IKP03N120H2
Power Semiconductors
3
Rev. 2.3 17.07.2013