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MJE13003FT
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89Plastic Package.

特征 / Features
快速转换。
High Speed Switching
用途 / Applications
主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。
High frequency electronic lighting ballast applications,converters, inverters switching ,regulators, etc.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
12
3
PIN1Base
PIN 2Collector
PIN 3Emitter
印章代码 / Marking
Marking
H03F
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MJE13003FT
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
*mounted on ceramic substrate(250mm2×0.8t)
*贴装于 250mm2×0.8t 的陶瓷板上。
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
*PC
Tj
Tstg
数值
Rating
600
400
9.0
0.5
500
1.0
150
-55150
单位
Unit
V
V
V
A
mW
W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
符号
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Cut-Off Current
ICBO
Collector cut-off current
ICEO
Emitter Base Cut-Off Current
IEBO
DC Current Gain
Collector to Emitter Saturation
Voltage
hFE
VCE(sat)
Base to Emitter Saturation Voltage VBE(sat)
Transition Frequency
fT
Fall time
Storage time
tf
ts
测试条件
Test Conditions
IC=1mA
IE=0
IC=10mA IB=0
IE=1mA
IC=0
VCB=600V IE=0
VCE=400V IB=0
VEB=9.0V IC=0
VCE=5.0V IC=200mA
IC=200mA IB=40mA
IC=200mA
VCE=10V
f=1.0MHz
IB=40mA
IC=50mA
VCE=5V
(UI9600)
IC=100mA
最小值 典型值 最大值 单位
Min Typ Max Unit
600 V
400 V
9.0 V
0.1 mA
0.1 mA
0.1 mA
10 40
0.5 V
1.2 V
5.0 MHz
0.6 μs
4.0 μs
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MJE13003FT
Rev.E Mar.-2016
电参数曲线图 / Electrical Characteristic Curve
SOA(DC)
DATA SHEET
PC-TC
hFE-Ic
hFE-Ic
Vces-IC
tS-Ta
Vbes-IC
hFE-Ta
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MJE13003FT
Rev.E Mar.-2016
外形尺寸图 / Package Dimensions
DATA SHEET
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MJE13003FT
Rev.E Mar.-2016
印章说明 / Marking Instructions
H03F
DATA SHEET
说明:
H
03F
**
Note:
H:
03F:
**:
为公司代码
为型号代码
为生产批号代码,随生产批号变化
Company Code.
Product Type.
Lot No. Code, code change with Lot No.
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