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MJE13002 / MJE13003
NPN Silicon Power Transistors
These devices are designed for high-voltage,
high-speed power switching inductive circuits where
fall time is critical.
They are particularly suited for 115 and 220V
SWITCHMODE applications such as Switching
Regulator’s, Inverters, Motor Controls, Solenoid /
Relay drivers and Deflection circuits.
SPECIFICATION FEATURES:
• Reverse Biased SOA with Inductive Loads TC=100oC
• Inductive Switching Matrix 0.5 to 1.5 Amp,25 and 100oC
tc @ 1A, 100oC is 290 ns (Typ).
• 700V Blocking Capability
• SOA and Switching Applications Information.
Absolute Maximum Ratings (T a=25oC)
TO-225AA Package
Symbol
Value
MJE13002 MJE13003
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Collector Current - Peak 1)
Base Current - Continuous
Base Current - Peak 1)
Emitter Current - Continuous
Emitter Current - Peak 1)
Total Power Dissipation @ TA=25oC
Derate above 25oC
Total Power Dissipation @ TC=25oC
Derate above 25oC
VCEO(sus)
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
PD
300 400
600 700
9
1.5
3
0.75
1.5
2.25
4.5
1.4
11.2
40
320
Operating and Storage Junction Temperature Range
Thermal Resistance ,Junction to Ambient
Thermal Resistance ,Junction to Case
Maximum Load Temperature for Soldering
Purposes:1/8” from Case for 5 Seconds
TJ, Ts
RΘ JA
RΘ JC
TL
-65 to +150
89
3.12
275
1) Pulse Test: Pulse Width=5ms, Duty Cycle10%.
G S P FORM A IS AVAILABLE
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Watts
mW/ oC
Watts
mW/ oC
OC
OC/W
OC/W
OC
РАДИОТЕХ
Тел.: (495) 795-0805
Факс: (495) 234-1603
Эл. почта: info@rct.ru
Веб: www.rct.ru
®

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MJE13002 / MJE13003
Characteristics at Ta=25 OC
DC Current Gain
at VCE=2Vdc, IC=0.5Adc
at VCE=2Vdc, IC=1Adc
Collector Emitter Sustaining Voltage
at IC=10mA
at IC=10mA
MJE13002
MJE13003
Collector Cutoff Current
at VCEV=Rated Value, VBE(off)=1.5Vdc
at VCEV=Rated Value, VBE(off)=1.5Vdc,TC=100oC
Emitter Cutoff Current
at VEB=9Vdc
Collector Emitter Saturation Voltage
at IC=0.5Adc, IB=0.1Adc
at IC=1Adc, IB=0.25Adc
at IC=1.5Adc, IB=0.5Adc
at IC=1Adc, IB=0.25Adc, TC=100oC
Base Emitter Saturation Voltage
at IC=0.5Adc, IB=0.1Adc
at IC=1Adc, IB=0.25Adc
at IC=1Adc, IB=0.25Adc, TC=100oC
Current Gain Bandwidth Product
at VCE=10Vdc, IC=100mAdc,f=1MHz
Output Capacitance
at VCB=10Vdc, f=0.1MHz
Delay Time
Rise Time
Storage Time
Fall Time
(VCC=125Vdc,IC=1A,
IB1=IB2=0.2A,tp=25µs,
Duty Cycle1%)
Storage Time
Crossover Time
Fall Time
(IC=1A,Vclamp=300Vdc,
IB1=0.2A,VBE(off)=5Vdc,
TC=100oC)
Symbol
hFE
hFE
VCEO(sus)
VCEO(sus)
ICEV
ICEV
IEBO
VCE(sat)
VCE(sat)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
VBE(sat)
fT
Cob
td
tr
ts
tf
tsv
tc
tfi
1) Pulse Test: Pulse Width=300µs, Duty Cycle2%.
Min.
8
5
300
400
-
-
-
-
-
-
-
-
-
-
4
-
-
-
-
-
-
-
-
G S P FORM A IS AVAILABLE
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
21
0.05
0.5
2
0.4
1.7
0.29
0.15
Max.
40
25
-
-
1
5
1
0.5
1
3
1
1
1.2
1.1
-
-
0.1
1
4
0.7
4
0.75
-
Unit
-
-
Vdc
Vdc
mAdc
mAdc
mAdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
MHz
pF
µs
µs
µs
µs
µs
µs
µs
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany
® listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 07/12/2002