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Small Signal Zener Diodes
Features
• Silicon Planar Power Zener Diodes.
• Standard Zener voltage tolerance is ± 2 %.
Applications
Voltage stabilization
Mechanical Data
Case: DO-35 Glass case
Weight: approx. 125 mg
Packaging codes/options:
TAP / 10 k per Ammopack (52 mm tape), 30 k/box
TR / 10 k per 13 " reel , 30 k/box
1N5221C to 1N5267C
Vishay Semiconductors
94 9367
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Power dissipation
TL 75 °C
Z-current
Junction temperature
Storage temperature range
Symbol
PV
IZ
Tj
Tstg
Value
500
PV/VZ
200
- 65 to + 200
Unit
mW
mA
°C
°C
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Junction ambient
l = 9.5 mm (3/8 "), TL=constant
Symbol
RthJA
Value
300
Unit
K/W
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
IF = 200 mA
Symbol
Min
Typ.
Max
Unit
VF 1.1 V
Document Number 84613
Rev. 1.0, 02-Sep-04
www.vishay.com
1

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1N5221C to 1N5267C
Vishay Semiconductors
Electrical Characteristics
1N5221C...1N5267C
Partnumber Nominal Zener Test Current
Voltage1)
@ IZT, VZ
IZT
1N5221C
1N5222C
1N5223C
1N5224C
1N5225C
1N5226C
1N5227C
1N5228C
1N5229C
1N5230C
1N5231C
1N5232C
1N5233C
1N5234C
1N5235C
1N5236C
1N5237C
1N5238C
1N5239C
1N5240C
1N5241C
1N5242C
1N5243C
1N5244C
1N5245C
1N5246C
1N5247C
1N5248C
1N5249C
1N5250C
1N5251C
1N5252C
1N5253C
1N5254C
1N5255C
1N5256C
1N5257C
1N5258C
1N5259C
1N5260C
1N5261C
1N5262C
1N5263C
1N5264C
V
2.4
2.5
2.7
2.8
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9
8.5
7.8
7.4
7
6.6
6.2
5.6
5.2
5
4.6
4.5
4.2
3.8
3.4
3.2
3
2.7
2.5
2.2
2.1
Maximum
Dynamic
Impedance1)
ZZT @ IZT
30
30
30
30
29
28
24
23
22
19
17
11
7
7
5
6
8
8
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
58
70
80
93
105
125
150
170
Maximum
Dynamic
Impedance
ZZK @ IZK =
0.25 mA
1200
1250
1300
1400
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
1000
1100
1300
1400
Typical
Temperature of
Coeffizient
@ IZT
α (%/K)
-0.085
-0.085
-0.080
-0.080
-0.075
-0.070
-0.065
-0.060
+0.055
+0.030
+0.030
+0.038
+0.038
+0.045
+0.050
+0.058
+0.062
+0.065
+0.068
+0.075
+0.076
+0.077
+0.079
+0.082
+0.082
+0.083
+0.084
+0.085
+0.086
+0.086
+0.087
+0.088
+0.089
+0.090
+0.091
+0.091
+0.092
+0.093
+0.094
+0.095
+0.095
+0.096
+0.096
+0.097
Maximum Reverse Leakage
Current
IR VR
µA V
100 1
100 1
75 1
75 1
50 1
25 1
15 1
10 1
51
52
52
53
5 3.5
54
35
36
3 6.5
3 6.5
37
38
2 8.4
1 9.1
0.5 9.9
0.1 10
0.1 11
0.1 12
0.1 13
0.1 14
0.1 14
0.1 15
0.1 17
0.1 18
0.1 19
0.1 21
0.1 21
0.1 23
0.1 25
0.1 27
0.1 30
0.1 33
0.1 36
0.1 39
0.1 43
0.1 46
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Document Number 84613
Rev. 1.0, 02-Sep-04

No Preview Available !

1N5221C to 1N5267C
Vishay Semiconductors
Partnumber Nominal Zener Test Current
Voltage1)
Maximum
Dynamic
Impedance1)
Maximum
Dynamic
Impedance
Typical
Temperature of
Coeffizient
Maximum Reverse Leakage
Current
@ IZT, VZ
IZT
ZZT @ IZT
ZZK @ IZK =
@ IZT
0.25 mA
IR
VR
V mA
Ω α (%/K) µA
V
1N5265C
62
2
185
1400
+0.097
0.1
47
1N5266C
68
1.8
230
1600
+0.097
0.1
52
1N5267C
75
1.7
270
1700
+0.098
0.1
56
1) Based on dc-measurement at thermal equilibrium; lead length = 9.5 (3/8 "); thermal resistance of heat sink = 30 K/W
Typical Characteristics (Tamb = 25 ° C unless otherwise specified)
500
400
300
ll
200
100
0
0
95 9611
TL=constant
5 10 15
l – Lead Length ( mm )
20
Figure 1. Thermal Resistance vs. Lead Length
1.3
VZtn=VZt/VZ(25°C)
1.2
TKVZ=10 x 10–4/K
8 x 10–4/K
1.1 6 x 10–4/K
4 x 10–4/K
2 x 10–4/K
1.0 0
–2 x 10–4/K
–4 x 10–4/K
0.9
0.8
–60
95 9599
0 60 120 180 240
Tj – Junction Temperature (°C )
Figure 3. Typical Change of Working Voltage vs. Junction
Temperature
1000
Tj=25°C
100
10
IZ=5mA
1
0
95 9598
5 10 15 20
VZ – Z-Voltage ( V )
25
Figure 2. Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
600
500
400
300
200
100
0
0
95 9602
40 80 120 160 200
Tamb – Ambient Temperature(°C )
Figure 4. Total Power Dissipation vs. Ambient Temperature
Document Number 84613
Rev. 1.0, 02-Sep-04
www.vishay.com
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1N5221C to 1N5267C
Vishay Semiconductors
15
10
5
IZ=5mA
0
–5
0
95 9600
10 20 30 40
VZ – Z-Voltage ( V )
50
Figure 5. Temperature Coefficient of Vz vs. Z-Voltage
200
150
VR=2V
Tj=25°C
100
50
0
0
95 9601
5 10 15 20
VZ – Z-Voltage ( V )
25
Figure 6. Diode Capacitance vs. Z-Voltage
100
10
Tj=25°C
1
0.1
0.01
0.001
0
95 9605
0.2 0.4 0.6 0.8
VF – Forward Voltage ( V )
1.0
Figure 7. Forward Current vs. Forward Voltage
100
80
Ptot=500mW
Tamb=25°C
60
40
20
0
0
95 9604
4 8 12 16
VZ – Z-Voltage ( V )
20
Figure 8. Z-Current vs. Z-Voltage
50
40
Ptot=500mW
Tamb=25°C
30
20
10
0
15
95 9607
20 25 30
VZ – Z-Voltage ( V )
35
Figure 9. Z-Current vs. Z-Voltage
1000
IZ=1mA
100
5mA
10 10mA
1
0
95 9606
Tj=25°C
5 10 15 20 25
VZ – Z-Voltage ( V )
Figure 10. Differential Z-Resistance vs. Z-Voltage
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Document Number 84613
Rev. 1.0, 02-Sep-04

No Preview Available !

1N5221C to 1N5267C
Vishay Semiconductors
1000
tp/T=0.5
100
tp/T=0.2
10
tp/T=0.1
tp/T=0.02
tp/T=0.05
tp/T=0.01
1
10–1
95 9603
100
Single Pulse
RthJA=300K/W
T=Tjmax–Tamb
iZM=(–VZ+(VZ2+4rzj x T/Zthp)1/2)/(2rzj)
101
tp – Pulse Length ( ms )
102
Figure 11. Thermal Response
Package Dimensions in mm (Inches)
ISO Method E
94 9366
2.0 (0.08) max.
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Cathode Identification
26 (1.02) min.
3.9 (0.15) max.
0.55 (0.02) max.
26 (1.02) min.
Document Number 84613
Rev. 1.0, 02-Sep-04
www.vishay.com
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