1N5262B.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 1N5262B 데이타시트 다운로드

No Preview Available !

www.vishay.com
1N5221B to 1N5267B
Vishay Semiconductors
Small Signal Zener Diodes
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom.
2.4 to 75
Test current IZT
1.7 to 20
VZ specification
Thermal equilibrium
Int. construction
Single
UNIT
V
mA
FEATURES
• Silicon planar power Zener diodes
• Standard Zener voltage tolerance is ± 5 %
• These diodes are also available in MiniMELF
case with the type designation TZM5221 to
TZM5267, SOT-23 case with the type
designations MMBZ5225 to MMBZ5267 and
SOD-123 case with the types designations
MMSZ5225 to MMSZ5267
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Voltage stabilization
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
1N5221B to 1N5267B
1N5221B to 1N5267B-series-TR
1N5221B to 1N5267B
1N5221B to 1N5267B-series-TAP
TAPED UNITS PER REEL
10 000 per 13" reel
10 000 per ammopack
(52 mm tape)
MINIMUM ORDER QUANTITY
30 000/box
30 000/box
PACKAGE
PACKAGE NAME
DO-35
WEIGHT
125 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Power dissipation
TL 25 °C
Ptot
Zener current
IZ
Thermal resistance junction to ambient air
Junction temperature
I = 4 mm, TL = constant
RthJA
Tj
Storage temperature range
Tstg
Forward voltage (max.)
IF = 200 mA
VF
VALUE
500
Ptot/VZ
300
175
- 65 to + 175
1.1
UNIT
mW
mA
K/W
°C
°C
V
Rev. 2.0, 06-May-13
1 Document Number: 85588
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

No Preview Available !

www.vishay.com
1N5221B to 1N5267B
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE (1)
TEST CURRENT
REVERSE
LEAKAGE
CURRENT
DYNAMIC RESISTANCE
f = 1 kHz
PART NUMBER
VZ at IZT1
IZT1
IZT2
IR at VR
ZZ at IZT1 (1) ZZK at IZT2
V
mA μA V
NOM.
MAX.
MAX.
MAX.
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1N5256B
1N5257B
1N5258B
1N5259B
1N5260B
1N5261B
1N5262B
1N5263B
1N5264B
1N5265B
1N5266B
1N5267B
2.4
20 0.25 100 1
30
1200
2.5
20 0.25 100 1
30
1250
2.7
20 0.25 75
1
30
1300
2.8
20 0.25 75
1
30
1400
3
20 0.25 50
1
29
1600
3.3
20 0.25 25
1
28
1600
3.6
20 0.25 15
1
24
1700
3.9
20 0.25 10
1
23
1900
4.3
20 0.25
5
1
22
2000
4.7
20 0.25
5
2
19
1900
5.1
20 0.25
5
2
17
1600
5.6
20 0.25
5
3
11
1600
6
20 0.25 5 3.5
7
1600
6.2
20 0.25
5
4
7
1000
6.8
20 0.25
3
5
5
750
7.5
20 0.25
3
6
6
500
8.2
20 0.25 3 6.5
8
500
8.7
20 0.25 3 6.5
8
600
9.1
20 0.25
3
7
10
600
10
20 0.25
3
8
17
600
11
20 0.25 2 8.4
22
600
12
20 0.25 1 9.1
30
600
13
9.5 0.25 0.5 9.9
13
600
14
9 0.25 0.1 10
15
600
15
8.5 0.25 0.1 11
16
600
16
7.8 0.25 0.1 12
17
600
17
7.4 0.25 0.1 13
19
600
18
7 0.25 0.1 14
21
600
19
6.6 0.25 0.1 14
23
600
20
6.2 0.25 0.1 15
25
600
22
5.6 0.25 0.1 17
29
600
24
5.2 0.25 0.1 18
33
600
25
5 0.25 0.1 19
35
600
27
4.6 0.25 0.1 21
41
600
28
4.5 0.25 0.1 21
44
600
30
4.2 0.25 0.1 23
49
600
33
3.8 0.25 0.1 25
58
700
36
3.4 0.25 0.1 27
70
700
39
3.2 0.25 0.1 30
80
800
43
3 0.25 0.1 33
93
900
47
2.7 0.25 0.1 36
105
1000
51
2.5 0.25 0.1 39
125
1100
56
2.2 0.25 0.1 43
150
1300
60
2.1 0.25 0.1 46
170
1400
62
2 0.25 0.1 47
185
1400
68
1.8 0.25 0.1 52
230
1600
75
1.7 0.25 0.1 56
270
1700
Note
(1) Based on DC measurement at thermal equilibrium; lead length = 9.5 (3/8"); thermal resistance of heat sink = 30 K/W
TEMPERATURE
COEFFICIENT
VZ
%/K
TYP.
- 0.085
- 0.085
- 0.08
- 0.08
- 0.075
- 0.07
- 0.065
- 0.06
0.055
0.03
0.03
0.038
0.038
0.045
0.05
0.058
0.062
0.065
0.068
0.075
0.076
0.077
0.079
0.082
0.082
0.083
0.084
0.085
0.086
0.086
0.087
0.088
0.089
0.09
0.091
0.091
0.092
0.093
0.094
0.095
0.095
0.096
0.096
0.097
0.097
0.097
0.098
Rev. 2.0, 06-May-13
2 Document Number: 85588
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

No Preview Available !

www.vishay.com
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1N5221B to 1N5267B
Vishay Semiconductors
500
400
300
ll
200
100
0
0
TL = constant
5 10 15 20
I - Lead Length (mm) 95 9611
Fig. 1 - Thermal Resistance vs. Lead Length
600
500
400
300
200
100
0
0 40 80 120 160 200
95 9602 Tamb - Ambient Temperature (°C)
Fig. 4 - Total Power Dissipation vs. Ambient Temperature
1000
Tj = 25 °C
100
IZ = 5 mA
10
1
0
95 9598
5 10 15 20
VZ - Z-Voltage (V)
25
Fig. 2 - Typical Change of Working Voltage under Operating
Conditions at Tamb= 25 °C
15
10
5
IZ = 5 mA
0
-5
0
95 9600
10 20 30 40
VZ - Z-Voltage (V)
50
Fig. 5 - Temperature Coefficient of VZ vs. Z-Voltage
1.3
VZtn = VZt/VZ (25 °C)
1.2
TKVZ = 10 x 10-4/K
8 x 10-4/K
6 x 10-4/K
1.1
4 x 10-4/K
2 x 10-4/K
1.0 0
- 2 x 10-4/K
0.9 - 4 x 10-4/K
200
150
VR = 2 V
Tj = 25 °C
100
50
0.8
- 60
0
60 120 180 240
95 9599 Tj - Junction Temperature (°C)
0
0
95 9601
5 10 15 20
VZ - Z-Voltage (V)
25
Fig. 3 - Typical Change of Working Voltage vs.
Junction Temperature
Fig. 6 - Diode Capacitance vs. Z-Voltage
Rev. 2.0, 06-May-13
3 Document Number: 85588
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

No Preview Available !

www.vishay.com
100
10
Tj = 25 °C
1
0.1
0.01
0.001
0
95 9605
0.2 0.4 0.6 0.8
VF - Forward Voltage (V)
1.0
Fig. 7 - Forward Current vs. Forward Voltage
100
80
Ptot = 500 mW
Tamb = 25 °C
60
40
20
0
0
95 9604
4 6 8 12
VZ - Z-Voltage (V)
Fig. 8 - Z-Current vs. Z-Voltage
20
1N5221B to 1N5267B
Vishay Semiconductors
50
40
Ptot = 500 mW
Tamb = 25 °C
30
20
10
0
15
95 9607
20 25 30
VZ - Z-Voltage (V)
Fig. 9 - Z-Current vs. Z-Voltage
35
1000
IZ = 1 mA
100
5 mA
10 10 mA
1
0
95 9606
Tj = 25 °C
5 10 15 20 25
VZ - Z-Voltage (V)
Fig. 10 - Differential Z-Resistance vs. Z-Voltage
1000
tp/T = 0.5
100
tp/T = 0.2
10
tp/T = 0.1
tp/T = 0.01
tp/T = 0.02
Single Pulse
RthJA = 300 K/W
T = Tj max. - Tamb
1
10-1
tp/T = 0.05
100
iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj)
101
tp - Pulse Length (ms)
102
95 9603
Fig. 11 - Thermal Response
Rev. 2.0, 06-May-13
4 Document Number: 85588
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

No Preview Available !

www.vishay.com
PACKAGE DIMENSIONS in millimeters (inches): DO-35_1N52xx
Cathode Identification
1N5221B to 1N5267B
Vishay Semiconductors
26 min. [1.024]
Rev. 1 - Date: 19. December 2011
Document no.: S8-V-3906.04-031(4)
94 12648
3.9 max. [0.154]
3.1 min. [0.120]
26 min. [1.024]
Rev. 2.0, 06-May-13
5 Document Number: 85588
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000