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Glass Silicon Zener Diode
1N5221B-G Thru. 1N5267B-G
Voltage: 2.4 to 75 Volts
Power: 0.5 Watts
RoHS Device
Comchip
SMD Diode Specialist
Features
-Planar Die Construction
-500mW Power Dissipation
-Ideally Suited for Automated Assembly Processes
DO-35
1.02(26.00) Min.
Mechanical data
-Case: Molded plastic, DO-35
-Terminals : Solderable per MIL-STD-750,Method
Method 2026
-Polarity: Indicated by cathode band
-Marking: Type number
-Weight: 0.13gram
0.079(2.00)Max.
0.165(4.20)Max.
1.02(26.00) Min.
0.020(0.52)Typ.
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
(TA=25°C, unless otherwise noted)
Parameter
Symbol
Value
Power dissipation at Tamb=25°C
PToT
500
Junction temperature
TJ 175
Storage temperature range
TSTG
-65 ~ +175
Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.
Unit
mW
°C
°C
Parameter
Symbol
Min
Max
Thermal resistance (junction to ambient air)
RθJA
0.3*
Forward voltage at IF = 200mA
VF 1.1
Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.
Unit
K/mW
V
QW-BZ001
REV: B
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Glass Silicon Zener Diode
Comchip
SMD Diode Specialist
Electrical Characteristics (1N5221B-G Thru. 1N5267B-G)
Nominal Zener Voltage
Maximum Zener Impedance
Part No.
Vz @ IZT
ZzT @ IzT
Zzk @ Izk
1N5221B-G
1N5222B-G
1N5223B-G
1N5224B-G
1N5225B-G
1N5226B-G
1N5227B-G
1N5228B-G
1N5229B-G
1N5230B-G
1N5231B-G
1N5232B-G
1N5233B-G
1N5234B-G
1N5235B-G
1N5236B-G
1N5237B-G
1N5238B-G
1N5239B-G
1N5240B-G
1N5241B-G
1N5242B-G
1N5243B-G
1N5244B-G
1N5245B-G
1N5246B-G
1N5247B-G
1N5248B-G
1N5249B-G
1N5250B-G
1N5251B-G
1N5252B-G
1N5253B-G
1N5254B-G
1N5255B-G
1N5256B-G
1N5257B-G
1N5258B-G
1N5259B-G
1N5260B-G
1N5261B-G
1N5262B-G
1N5263B-G
1N5264B-G
1N5265B-G
1N5266B-G
1N5267B-G
Nom.V
2.4
2.5
2.7
2.8
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
Min.V
2.28
2.38
2.57
2.66
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.70
5.89
6.46
7.13
7.79
8.27
8.65
9.50
10.45
11.40
12.35
13.30
14.25
15.20
16.15
17.10
18.05
19.00
20.90
22.80
23.75
25.65
26.60
28.50
31.35
34.20
37.05
40.85
44.65
48.45
53.20
57.00
58.90
64.60
71.25
Max.V
2.52
2.63
2.84
2.94
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.30
6.51
7.14
7.88
8.61
9.14
9.56
10.50
11.55
12.60
13.65
14.70
15.75
16.80
17.85
18.90
19.95
21.00
23.10
25.20
26.25
28.35
29.40
31.50
34.65
37.80
40.95
45.15
49.35
53.55
58.80
63.00
65.10
71.40
78.75
Ω
30
30
30
30
29
28
24
23
22
19
17
11
7
7
5
6
8
8
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
58
70
80
93
105
125
150
170
185
230
270
mA Ω mA
20
1200
0.25
20
1250
0.25
20
1300
0.25
20
1400
0.25
20
1600
0.25
20
1600
0.25
20
1700
0.25
20
1900
0.25
20
2000
0.25
20
1900
0.25
20
1600
0.25
20
1600
0.25
20
1600
0.25
20
1000
0.25
20 750 0.25
20 500 0.25
20 500 0.25
20 600 0.25
20 600 0.25
20 600 0.25
20 600 0.25
20 600 0.25
9.5 600 0.25
9 600 0.25
8.5 600 0.25
7.8 600 0.25
7.4 600 0.25
7 600 0.25
6.6 600 0.25
6.2 600 0.25
5.6 600 0.25
5.2 600 0.25
5 600 0.25
4.6 600 0.25
4.5 600 0.25
4.2 600 0.25
3.8 700 0.25
3.4 700 0.25
3.2 800 0.25
3 900 0.25
2.7 1000 0.25
2.5 1100 0.25
2.2 1300 0.25
2.1 1400 0.25
2
1400
0.25
1.8
1600
0.25
1.7
1700
0.25
(1)Base on DC measurement at thermal equilibrium; lead length=9.5(3/8"); thermal resistance of heat sink=30
OC/W
Maxumum Reverse
Leakage Current
IR @ VR
μA V
100 1
100 1
75 1
75 1
50 1
25 1
15 1
10 1
51
52
52
53
5 3.5
54
35
36
3 6.5
3 6.5
37
38
2 8.4
1 9.1
0.5 9.9
0.1 10
0.1 11
0.1 12
0.1 13
0.1 14
0.1 14
0.1 15
0.1 17
0.1 18
0.1 19
0.1 21
0.1 21
0.1 23
0.1 25
0.1 27
0.1 30
0.1 33
0.1 36
0.1 39
0.1 43
0.1 46
0.1 47
0.1 52
0.1 56
Marking Code
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1N5256B
1N5257B
1N5258B
1N5259B
1N5260B
1N5261B
1N5262B
1N5263B
1N5264B
1N5265B
1N5266B
1N5267B
QW-BZ001
REV: B
Page 2

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Glass Silicon Zener Diode
Characteristics Curves (1N5221B-G Thru. 1N5267B-G)
Fig.1- Power Derating Curve
600
500
400
300
200
100
0
0
50 100 150 200
Ambient Temperature, ( °C )
250
Comchip
SMD Diode Specialist
50
40
30
20
10
0
0
Fig.2 - Breakdown Characteristics
Test Current
Iz = 20mA
5 10
15 20 25 30
Vz, (V)
QW-BZ001
REV: B
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Glass Silicon Zener Diode
Taping Specification For Axial Lead Diodes
90℃±5℃
AZ
E
L1
L2
E
B
T
Comchip
SMD Diode Specialist
DO-35
SYMBOL
A
B
Z
T
E
(mm) 5.00 ± 0.5 52.0 ± 1.5 1.2 (max) 6.0 ± 0.4 0.8 (max)
(inch) 0.197± 0.020 2.047 ± 0.059 0.047 (max) 0.236 ± 0.016 0.032(max)
L1-L2
1.0 (max)
0.039 (max)
Marking Code
Part Number
1N5221-G ~ 1N5267-G
Marking Code
1N50XXB
Cathode band
1N
52
XXB
XX : Product type marking code (see page.2)
Standard Packaging
Case Type
DO-35
AMMO PACK
BOX
( pcs )
CARTON
( pcs )
5,000
100,000
QW-BZ001
REV: B
Page 3