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Silicon N-Channel Power MOSFET
CS8N65 ARR
R
General Description
CS8N65 ARR, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-262,
which accords with the RoHS standard.
Features
l Fast Switching
l Low ON Resistance(Rdson1.0)
l Low Gate Charge (Typical Data:29nC)
l Low Reverse transfer capacitances(Typical:6.6pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD(TC=25)
RDS(ON)Typ
650
8
120
0.86
Rating
650
8
5
32
±30
500
5.0
120
0.96
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
V/ns
W
W/
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CS8N65 ARR
R
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS =650V, VGS= 0V,
Ta = 25
VDS =520V, VGS= 0V,
Ta = 125
VGS =+30V
VGS =-30V
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
Test Conditions
VGS=10V,ID=4A
VDS = VGS, ID = 250µA
Dynamic Characteristics
Symbol
Parameter
gfs Forward Trans conductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Test Conditions
VDS=15V, ID =4A
VGS = 0V VDS = 25V
f = 1.0MHz
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
ID =8A VDD = 325V
RG =10
ID =8A VDD =520V
VGS = 10V
Rating
Min. Typ. Max.
650 -- --
-- 0.7 --
-- --
1
-- -- 100
-- -- 100
-- -- -100
Unit
s
V
V/
µA
µA
nA
nA
Rating
Min. Typ. Max.
-- 0.86 1.0
2.0 -- 4.0
Units
V
Rating
Min. Typ. Max.
-- 7.5 --
-- 1540 --
-- 123 --
-- 6.6 --
Units
S
pF
Rating
Min. Typ. Max.
-- 24 --
-- 18 --
-- 50 --
-- 18 --
-- 29 --
-- 6 --
-- 11.3 --
Units
ns
nC
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CS8N65 ARR
R
Source-Drain Diode Characteristics
Symbol
Parameter
IS Continuous Source Current (Body Diode)
ISM Maximum Pulsed Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM
Reverse Recovery Current
Pulse width tp300µs,δ≤2%
Test Conditions
IS=8A,VGS=0V
IS=8A,Tj = 25
dIF/dt=100A/us,
VGS=0V
Min.
--
--
--
--
--
--
Rating
Typ. Max.
-- 8
-- 32
-- 1.5
427 --
2560 --
12 --
Units
A
A
V
ns
nC
A
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ. Units
1.04 /W
62.5 /W
a1Repetitive rating; pulse width limited by maximum junction temperature
a2L=10mH, ID=10A, Start TJ=25
a3ISD =8A,di/dt 100A/us,VDDBVDS, Start TJ=25
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Characteristics Curve
100
CS8N65 ARR
160
R
10
1
OPERATION IN THIS AREA
MAY BE LIMITED BY RDS(ON)
0 .1 TJ=MAX RATED
TC=25Single Pulse
100us
1ms
DC 10ms
0 .0 1
1
Figure
12
10 100 1000
V ds , D rain-to-S ource V oltage , V olts
1 Maximum Forward Bias Safe Operating Area
8
4
120
80
40
0
0 25 50 75 100 125 150
TC , Case Temperature , C
Figure 2 Maximum Power Dissipation vs Case Temperature
14
250us Pluse Test
Tc = 25
10.5
VGS=10V
VGS=7V
7
VGS=5V
VGS=6V
3.5 VGS=4.5V
0
0 25 50 75 100 125 150
TC , Case Temperature , C
Figure 3 Maximum Continuous Drain Current vs Case Temperature
0
0
5 10 15 20
Vds , Drain-to-Source Voltage , Volts
Figure 4 Typical Output Characteristics
25
Figure 5 Maximum Effective Thermal Impedance , Junction to Case
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18
250us Pulse Test
VDS=20V
12
+25
6
+150
CS8N65 ARR
16
12
8
+150
+25
4
R
0
2468
Vgs , Gate to Source Voltage , Volts
Figure 6 Typical Transfer Characteristics
1.05
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25
1.0
0.95
VGS=10V
10
0.9
0.85
0
246
Id , Drain Current , Amps
Figure 8 Typical Drain to Source ON Resistance
vs Drain Current
8
0
0 0.2 0.4 0.6 0.8 1 1.2
Vsd , Source - Drain Voltage , Volts
Figure 7 Typical Body Diode Transfer Characteristics
2.5
2.25
2
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=4A
1.75
1.5
1.25
1
0.75
0.5
-50
0 50 100
Tj, Junction temperature , C
150
Figure 9 Typical Drian to Source on Resistance
vs Junction Temperature
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