L149.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 L149 데이타시트 다운로드

No Preview Available !

LINEAR INTEGRATED CIRCUIT
MONOLITHIC HIGH GAIN POWER OUTPUT STAGE
The L149 is a general purpose power booster in Pentawatt® package consisting of a quasi-complemen-
tary darlingtons output stage with the associated biasing system and inhibit facility.
The circuit features are:
High output current (4A peak)
- High current gain (10 000 typ.)
Operation up to ± 20V
Thermal protection
- Short circuit protection
- Operation within SOA
- High slew-rate
The device is particularly suited for use with an operational amplifier inside a closed loop configuration
to increase output current (Po = 20W, d = 0.5%, RL = 4.11, Vs= ± 16V).
ABSOLUTE MAXIMUM RATINGS
Supply voltage
Input voltage
DC output current
Peak output current (internally limited)
Input inhibit voltage
Power dissipation at Tcase= 75°C
Storage and junction temperature
ORDERING NUMBER: L149V
MECHANICAL DATA
±20
Vs
3
4
-Vs +5
-Vs-1.5
25
-40 to 150
V
A
A
V
V
W
°C
Dimensions in mm
6/82
68

No Preview Available !

CONNECTION DIAGRAM (top view)
~ II . l~~: o,~ ~
(tab connected to pin 3)
5-4025
SCHEMATIC DIAGRAM
2
0----+--4
INPUT
", ~,,"',I,,, (H
s - L. 0 18/1
4
OUT
69
,!

No Preview Available !

THERMAL DATA
Rth j-case Thermal resistance junction-case
max 3 °C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Parameter
Vs Supply voltage
Id Qu iescent drain current
lin Input cu rrent
hFE
Gv
DC current gain
Voltage gain
V CEsat Saturation voltage
(for each transistor}
Vas Input offset voltage
V 1NH
Inhibit input voltage
(pins 1-3)
RINH
SR
B
Inhibit input resistance
Slew rate
Power bandwidth
Test conditions
Vs=±16V
V s = ± 16V
Vs = ± 16V
Vs=±16V
10= 3A
Vi = OV
10 =3A
10 = 1.5A
Min.
6000
Typ.
30
200
10000
1
Max. Unit
± 20
400
3.5
V
rnA
p.A
-
-
V
Vs=±16V
0.3 V
ON condition
OFF condition
± 1.2
± 0.3
V
f = 1 KHz
2.0 Kn
30 V/p.s
Vs= ±18V, d = 1%, R L =8n
200 KHz
TEST CIRCUIT
IN
0---
,- £-----D OUT
1il
-------,
~11UF !11UF
s- 40 19f1
70