L149.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 L149 데이타시트 다운로드

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LINEAR INTEGRATED CIRCUIT
MONOLITHIC HIGH GAIN POWER OUTPUT STAGE
The L149 is a general purpose power booster in Pentawatt® package consisting of a quasi-complemen-
tary darlingtons output stage with the associated biasing system and inhibit facility.
The circuit features are:
High output current (4A peak)
- High current gain (10 000 typ.)
Operation up to ± 20V
Thermal protection
- Short circuit protection
- Operation within SOA
- High slew-rate
The device is particularly suited for use with an operational amplifier inside a closed loop configuration
to increase output current (Po = 20W, d = 0.5%, RL = 4.11, Vs= ± 16V).
ABSOLUTE MAXIMUM RATINGS
Supply voltage
Input voltage
DC output current
Peak output current (internally limited)
Input inhibit voltage
Power dissipation at Tcase= 75°C
Storage and junction temperature
ORDERING NUMBER: L149V
MECHANICAL DATA
±20
Vs
3
4
-Vs +5
-Vs-1.5
25
-40 to 150
V
A
A
V
V
W
°C
Dimensions in mm
6/82
68

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CONNECTION DIAGRAM (top view)
~ II . l~~: o,~ ~
(tab connected to pin 3)
5-4025
SCHEMATIC DIAGRAM
2
0----+--4
INPUT
", ~,,"',I,,, (H
s - L. 0 18/1
4
OUT
69
,!

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THERMAL DATA
Rth j-case Thermal resistance junction-case
max 3 °C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Parameter
Vs Supply voltage
Id Qu iescent drain current
lin Input cu rrent
hFE
Gv
DC current gain
Voltage gain
V CEsat Saturation voltage
(for each transistor}
Vas Input offset voltage
V 1NH
Inhibit input voltage
(pins 1-3)
RINH
SR
B
Inhibit input resistance
Slew rate
Power bandwidth
Test conditions
Vs=±16V
V s = ± 16V
Vs = ± 16V
Vs=±16V
10= 3A
Vi = OV
10 =3A
10 = 1.5A
Min.
6000
Typ.
30
200
10000
1
Max. Unit
± 20
400
3.5
V
rnA
p.A
-
-
V
Vs=±16V
0.3 V
ON condition
OFF condition
± 1.2
± 0.3
V
f = 1 KHz
2.0 Kn
30 V/p.s
Vs= ±18V, d = 1%, R L =8n
200 KHz
TEST CIRCUIT
IN
0---
,- £-----D OUT
1il
-------,
~11UF !11UF
s- 40 19f1
70

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Fig.1 - Maximum saturation
voltage vs. output current
o.
1,
V
ll!t--+++-
'/
V
.-f-_.-
1
,
Fig. 2 - Current limiting
characteristics
Fig. 3 - Supply voltage
rejection vs. frequency
I',
I~I
I'
,
"
I
APPLICATION INFORMATION
Fig. 4 - High power amplifier with single power supply (Gv= 30 dB)
r---------~------------~------~~------~O·vs
Fig. 5 - Distortion vs. out-
put power (f = 1 KHz)
I -RL"Sfi
RL<:41l
Vs ,,32V
'i
Vs ",32V
." - " - -
'
0,'
0.01 I
Ii
Po(W}
Fig. 6 - Distortion vs. out-
put power (f= 10KHz)
d
('J.1
' f = G ,,30dS
f,,10KHz
G"4251
~~::~v FF
I
I
0,'
RL _sn
R L" 4ft
V(2111~ Iv'r I
-0
~
00, i I !I
Fig. 7 - Output power vs.
supply voltage
1-1~"30d8! I
_,f"lKHz
14 d"l·'.
RL,,411
"
"
"
,
i
I
V /1,
/. k
--1./ I ./
./
......v
......r---
I
II
,
'.~
RL"Sfi
/
,
,-I--
I
3022 26
34
71

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APPLICATION INFORMATION (continued)
Fig.8 - High slew-rate power operational amplifier
·V,~-~----------.---~-{)
Fig. 9 - Electronic potentiometer (short-circuit protected)
C6
111
Fig. 10 - 720W Switch-Mode Power Supply using the L 149 as driver stage for the power transistors
+-----:-c:-:,---r--+-r-l-~--o . 5V
u
10Kfi
_ _ _ _ _~L--------+--
J-_~J-_~~--o_5V
NOTE - For a more detailed description of the L 149 and its applications, refer to SGS-
TECHNICAL NOTE TN. 150.
72