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SA5.0 thru SA170CA
Vishay General Semiconductor
TRANSZORB® Transient Voltage Suppressors
DO-204AC (DO-15)
PRIMARY CHARACTERISTICS
VWM
PPPM
PD
IFSM (uni-directional only)
TJ max.
5.0 V to 170 V
500 W
3.0 W
70 A
175 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C or CA suffix
(e.g. SA5.0C, SA170CA).
Electrical characteristics apply in both directions.
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 500 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching
and lighting on ICs, MOSFET, signal lines of sensor
units for consumer, computer, industrial and
telecommunication.
MECHANICAL DATA
Case: DO-204AC, molded epoxy over passivated chip
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Peak pulse power dissipation with a 10/1000 µs waveform (1) (Fig. 1)
Peak pulse current with a 10/1000 µs waveform (1)
PPPM
IPPM
Power dissipation on infinite heatsink at TA = 75 °C (Fig. 5)
PD
Peak forward surge current, 10 ms single half sine-wave uni-directional only
Maximum instantaneous forward voltage at 35 A for uni-directional only (2)
IFSM
VF
Operating junction and storage temperature range
TJ, TSTG
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 per minute maximum
VALUE
500
See next table
3.0
70
3.5
- 55 to + 175
UNIT
W
A
W
A
V
°C
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Document Number: 88378
Revision: 04-Sep-07

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SA5.0 thru SA170CA
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
BREAKDOWN VOLTAGE
VBR AT IT (1)
(V)
MIN MAX
TEST
CURRENT
IT (mA)
STAND-
OFF
VOLTAGE
VWM (V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (3) (µA)
MAXIMUM
PEAK
PULSE
CURRENT
IPPM (2) (A)
SA5.0
6.40
7.30
10
5.0
600 52.1
SA5.0A(4)
6.4
7.07
10
5.0
600 54.3
SA6.0
6.67
8.15
10
6.0
600 43.9
SA6.0A
6.67
7.37
10
6.0
600 48.5
SA6.5
7.22
8.82
10
6.5
400 40.7
SA6.5A
7.22
7.98
10
6.5
400 44.7
SA7.0
7.78
9.51
10
7.0
150 37.6
SA7.0A
7.78
8.60
10
7.0
150 41.7
SA7.5
8.33
10.2
1.0
7.5
50 35.0
SA7.5A
8.33
9.21
1.0
7.5
50 38.8
SA8.0
8.89
10.9
1.0
8.0
25 33.3
SA8.0A
8.89
9.83
1.0
8.0
25 36.8
SA8.5
9.44
11.5
1.0
8.5
10 31.4
SA8.5A
9.44
10.4
1.0
8.5
10 34.7
SA9.0
10.0
12.2
1.0
9.0
5.0 29.6
SA9.0A
10.0
11.1
1.0
9.0
5.0 32.5
SA10
11.1
13.6
1.0
10
1.0 26.6
SA10A
11.1
12.3
1.0
10
1.0 29.4
SA11
12.2
14.9
1.0
11
1.0 24.9
SA11A
12.2
13.5
1.0
11
1.0 27.5
SA12
13.3
16.3
1.0
12
1.0 22.7
SA12A
13.3
14.7
1.0
12
1.0 25.1
SA13
14.4
17.6
1.0
13
1.0 21.0
SA13A
14.4
15.9
1.0
13
1.0 23.3
SA14
15.6
19.1
1.0
14
1.0 19.4
SA14A
15.6
17.2
1.0
14
1.0 21.6
SA15
16.7
20.4
1.0
15
1.0 18.6
SA15A
16.7
18.5
1.0
15
1.0 20.5
SA16
17.8
21.8
1.0
16
1.0 17.4
SA16A
17.8
19.7
1.0
16
1.0 19.2
SA17
18.9
23.1
1.0
17
1.0 16.4
SA17A
18.9
20.9
1.0
17
1.0 18.1
SA18
20.0
24.4
1.0
18
1.0 15.5
SA18A
20.0
22.1
1.0
18
1.0 17.1
SA20
22.2
27.1
1.0
20
1.0 14.0
SA20A
22.2
24.5
1.0
20
1.0 15.4
SA22
24.4
29.8
1.0
22
1.0 22.7
SA22A
24.4
26.9
1.0
22
1.0 14.1
SA24
26.7
32.6
1.0
24
1.0 11.6
SA24A
26.7
29.5
1.0
24
1.0 12.9
SA26
28.9
35.3
1.0
26
1.0 10.7
SA26A
28.9
31.9
1.0
26
1.0 11.9
SA28
31.1
38.0
1.0
28
1.0 10.0
SA28A
31.1
34.4
1.0
28
1.0 11.0
SA30
33.3
40.7
1.0
30
1.0
9.3
SA30A
33.3
36.8
1.0
30
1.0 10.0
SA33
36.7
44.9
1.0
33
1.0
8.5
SA33A
36.7
40.6
1.0
33
1.0
9.4
SA36
40.0
48.9
1.0
36
1.0
7.8
SA36A
40.0
44.2
1.0
36
1.0
8.6
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM VC
(V)
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.1
45.4
53.5
48.4
59.0
53.3
64.3
58.1
MAXIMUM
TEMPERATURE
COEFFICIENT
OF VBR
(mV/°C)
5.0
5.0
5.0
5.0
5.0
5.0
6.0
6.0
7.0
7.0
7.0
7.0
8.0
8.0
9.0
9.0
10
10
11
11
12
12
13
13
14
14
16
16
19
17
20
19
21
20
25
23
28
25
31
28
31
30
35
31
39
36
42
39
46
41
Document Number: 88378
Revision: 04-Sep-07
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SA5.0 thru SA170CA
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
BREAKDOWN VOLTAGE
VBR AT IT (1)
(V)
MIN MAX
TEST
CURRENT
IT (mA)
STAND-
OFF
VOLTAGE
VWM (V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (3) (µA)
MAXIMUM
PEAK
PULSE
CURRENT
IPPM (2) (A)
SA40
44.4 54.3
1.0
40
1.0 7.0
SA40A
44.4 49.1
1.0
40
1.0 7.8
SA43
47.8 58.4
1.0
43
1.0 6.5
SA43A
47.8 52.8
1.0
43
1.0 7.2
SA45
50.0 61.1
1.0
45
1.0 6.2
SA45A
50.0 55.3
1.0
45
1.0 6.9
SA48
53.3 65.2
1.0
48
1.0 5.8
SA48A
53.3 58.9
1.0
48
1.0 6.5
SA51
56.7 69.3
1.0
51
1.0 5.5
SA51A
56.7 62.7
1.0
51
1.0 6.1
SA54
60.0 73.3
1.0
54
1.0 5.2
SA54A
60.0 66.3
1.0
54
1.0 5.7
SA58
64.4 78.7
1.0
58
1.0 4.9
SA58A
64.4 71.2
1.0
58
1.0 5.3
SA60
66.7 81.5
1.0
60
1.0 4.7
SA60A
66.7 73.7
1.0
60
1.0 5.2
SA64
71.1 86.9
1.0
64
1.0 4.4
SA64A
71.1 78.6
1.0
64
1.0 4.9
SA70
77.8 95.1
1.0
70
1.0 4.0
SA70A
77.8 86.0
1.0
70
1.0 4.4
SA75
83.3 102
1.0
75
1.0 3.7
SA75A
83.3 92.1
1.0
75
1.0 4.1
SA78
86.7 106
1.0
78
1.0 3.6
SA78A
86.7 95.8
1.0
78
1.0 4.0
SA85
94.4 115
1.0
85
1.0 3.3
SA85A
94.4 104
1.0
85
1.0 3.6
SA90
100 122 1.0
90
1.0 3.1
SA90A
100 111 1.0
90
1.0 3.4
SA100
111 136 1.0 100
1.0
2.8
SA100A
111 123 1.0 100
1.0
3.1
SA110
122 149 1.0 110
1.0
2.6
SA110A
122 135 1.0 110
1.0
2.8
SA120
133 163 1.0 120
1.0
2.3
SA120A
133 147 1.0 120
1.0
2.6
SA130
144 176 1.0 130
1.0
2.2
SA130A
144 159 1.0 130
1.0
2.4
SA150
167 204 1.0 150
1.0
1.9
SA150A
167 185 1.0 150
1.0
2.1
SA160
178 218 1.0 160
1.0
1.7
SA160A
178 197 1.0 160
1.0
1.9
SA170
189 231 1.0 170
1.0
1.6
SA170A
189 209 1.0 170
1.0
1.8
Notes:
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM VC
(V)
71.4
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
230
209
268
243
257
259
304
275
MAXIMUM
TEMPERATURE
COEFFICIENT
OF VBR
(mV/°C)
51
46
55
50
58
52
63
56
66
61
71
65
78
70
80
71
86
76
94
85
101
91
105
95
114
103
121
110
135
123
148
133
162
146
175
158
203
184
217
196
230
208
(1) Pulse test: tp 50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types with VWM of 10 V and less, the ID limit is doubled
(4) For the bi-directional SA5.0CA, the maximum VBR is 7.25 V
(5) All terms and symbols are consistent with ANSI/IEEE C62.35
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Document Number: 88378
Revision: 04-Sep-07

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SA5.0 thru SA170CA
Vishay General Semiconductor
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
SA5.0A-E3/54
SA5.0AHE3/54 (1)
0.432
0.432
54
54
Note:
(1) Automotive grade AEC Q101 qualified
BASE QUANTITY
4000
4000
DELIVERY MODE
13" diameter paper tape and reel
13" diameter paper tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
30 Non-Repetitive Pulse
Waveform shown in Fig. 3
10 TA = 25 °C
PPK Impulse
”0.5”
Exponential
td Decay
1.0
PPK Half Sine
td
td = 7 tp
PPK Square
td
Current Waveforms
0.1
0.1 µs 1.0 µs 10 µs
100 µs
td - Pulse Width
1.0 ms 10 ms
Figure 1. Peak Pulse Power Rating Curve
100
75
50
25
0
0 25 50 75 100 125 150 175 200
TJ - Initial Temperature (°C)
Figure 2. Pulse Derating Curve
150
TJ = 25 °C
tr = 10 µs
Pulse Width (td)
Peak Value
IPPM
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
100 Half Value - IPP
IPPM
2
50 10/1000 µs Waveform
as defined by R.E.A.
td
0
0 1.0 2.0 3.0
t - Time (ms)
Figure 3. Pulse Waveform
4.0
200
8.3 ms Single Half Sine-Wave
100
10
1
10 100
Number of Cycles at 60 Hz
Figure 4. Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
Document Number: 88378
Revision: 04-Sep-07
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SA5.0 thru SA170CA
Vishay General Semiconductor
4.0
60 Hz
Resistive or
Inductive Load
3.0
2.0
L = 0.375" (9.5 mm)
1.0 Lead Lengths
0
0 25 50 75 100 125 150 175 200
TL - Lead Temperature (°C)
Figure 5. Steady State Power Derating Curve
10000
1000
100
VR = Rated
Stand-Off voltage
Uni-Directional
Bi-Directional
VR = 0
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
5 100 500
VWM - Reverse Stand-Off Voltage (V)
Figure 6. Capacitance
100
Waveform:
8 x 20 Impulse
DVC = VC - VBR
10
1.0
SA170 SA110
SA70
SA54
SA40
SA30
SA24
SA18
SA15
SA12
SA5.0
SA9.0
0.1
0.5
1 10
IPP - Peak Pulse Current (A)
50
Figure 7. Incremental Clamping Voltage Curve Uni-Directional
100
Waveform:
SA170
10 x 1000 Impulse
SA110
DVC = VC - VBR
SA70
10 SA40
SA24
SA15
1.0 SA9.0
SA5.0
0.1
0.5
1 10
IPP - Peak Pulse Current (A)
50
Figure 8. Incremental Clamping Voltage Curve Uni-Directional
100
Waveform:
8 x 20 Impulse
DVC = VC - VBR
10
1.0
SA170
SA110
SA70
SA60
SA40
SA30
SA24
SA15
SA9.0
SA6.5
0.1
0.5
1 10
IPP - Peak Pulse Current (A)
50
Figure 9. Incremental Clamping Voltage Curve Bi-Directional
100
Waveform:
SA170
SA110
10 x 1000 Impulse
DVC = VC - VBR
10 SA70
SA40 SA24
SA15
SA9.0
1.0 SA6.5
0.1
0.5
1 10
IPP - Peak Pulse Current (A)
50
Figure 10. Incremental Clamping Voltage Curve Bi-Directional
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Document Number: 88378
Revision: 04-Sep-07