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Advance Data Sheet
January 1999
E2560/E2580-Type 10 Gbits/s EML Modules
Features
s Integrated electroabsorptive modulator
s 1.5 µm wavelength
s Characterized for 10 Gbits/s operation
s For use up to 80 km at 10 Gbits/s
s Low modulation voltage
s Temperature stabilized
s Available with and without integral driver IC
s Wavelength selectable to ITU-T standards
s Ultrastable wavelength aging for DWDM
Applications
s SONET/SDH applications
s Ultrahigh capacity WDM system application
s High-speed data communication
s Digitized video
Description
The E2560 (without integral driver IC) and E2580
(with integral driver IC) are devices for 10 Gbits/s
DWDM or TDM transmission applications, which inte-
grate a CW laser with an electroabsorptive modulator
in the same semiconductor chip, and are an exten-
sion of Lucent Technologies Microelectronics
Groups’ existing E2500 series of devices. Both types
use a small-profile Gilbert GPO connector to handle
the RF signal. The device is typically coupled with a
number of erbium-doped fiber amplifiers, such as
Lucent Technologies' 1724-series, in order to ensure
that sufficient optical power reaches the receiver.
These devices can replace external modulators
which are often bulkier, more expensive, and require
more complex drive electronics than the EML. Both
E2560 and E2580 are available for transmission dis-
tances of 40 km and 80 km. The package also con-
tains a thermoelectric cooler, thermistor, rear facet
monitor photodiode, and an optical isolator.

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E2560/E2580-Type 10 Gbits/s EML Modules
Advance Data Sheet
January 1999
Description (continued)
The nominal input impedance of the E2560 version is 50 . The package is qualified to the Bellcore TA-TSY-
000468 standard.
Both E2560 and E2580 are available in a range of ITU-T wavelengths for use in DWDM systems operating at 10
Gbits/s per channel. The device has excellent wavelength stability, supporting operation at 100 GHz channel spac-
ing over 20 years (assuming an end-of-life aging condition of <±100 pm). Typically, no external wavelength stabili-
zation is required in systems of this type, using Lucent's E2500 series EMLs. The package also offers excellent
stability of wavelength vs. case temperature, with a maximum coefficient of 0.5 pm/ °C.
Module Characteristics
Table 1. Module Characteristics
Package Type
Fiber
Connector
RF Input Impedance
Bit Rate
E2560: 7-pin package with GPO connector RF input.
E2580: 13-pin package with GPO connector RF input.
Standard single-mode fiber.
ST ®; other connectors available on request.
50 Ω.
10 Gbits/s.
Pin Information
Table 2. Pin Descriptions
E2560
E2580
Pin Abbreviation
Definition
——
——
——
——
——
——
7 TEC–
Themoelectric cooler–
6 TEC+
Thermoelectric cooler+
5 BACK DET+
Monitor cathode (+)
4 BACK DET–
Monitor anode (–)
3 LASER+
Laser anode
2 THERM
Thermistor
1 THERM, LASER–, Combined thermistor/
CASE
laser cathode/case
Pin Abbreviation
Definition
13 TEC–
12 TEC+
11 VSS
10 DCA
Themoelectric cooler–
Thermoelectric cooler+
Voltage supply to the IC
Duty cycle adjust
9 OA
8 NC
7 NC
6 VEA
5 BACK DET+
Optical amplitude adjust
No connect/reserved
No connect/reserved
Modular offset (on-state)
Monitor cathode (+)
4 BACK DET–
Monitor anode (–)
3 LASER+
Laser anode
2 THERM
Thermistor
1 THERM, LASER–, Combined thermistor/
CASE
laser cathode/case
Note: For full details of pin functions and required bias levels for the version with the IC, refer to E2580 EML with Integral Driver IC: Pin
Definitions And Operation Application Note (TBD):
2 Lucent Technologies Inc.

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Advance Data Sheet
January 1999
E2560/E2580-Type 10 Gbits/s EML Modules
Target Specifications
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are
absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in
excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for
extended periods can adversely affect device reliability.
Table 3. Absolute Maximum Ratings
Parameter
Conditions
Laser Diode Reverse Voltage
Laser Diode Forward Current
Optical Output Power
Modulator Reverse Voltage
Modulator Forward Voltage
Monitor Diode Reverse Voltage
Monitor Diode Forward Voltage
Storage Temperature
Operating Temperature
CW
CW
CW
Limit
2
150
10
5
1
10
1
–40 to +85
–10 to +70
Unit
V
mA
mW
V
V
V
V
°C
°C
Characteristics
Table 4. Optical and Electrical Specifications (Chip operating temp. = 15 °C to 35 °C, except where noted.)
Parameter
Threshold Current (BOL)
Forward Voltage
Operating Current
Threshold Power
Symbol
Ith
VF
Iop
Pth
Fiber Output Power (Peak)
Ppk
Peak Wavelength
(Wavelength can be specified
to the ITU wavelength
channels.)
Side-mode Suppression Ratio
λ0
SMSR
Dispersion Penalty
BER = 10–10
DP
Conditions
If = Iop @ Top
If – Ith
Vm = Iop
Vm = 0 V
If = Iop
Vm = 0 V
Tlaser chip = Top
If = Iop
Vm = 0 V
If = Iop, Top
10 Gbits/s*
Vlow = –1.5 to –3.0 V,
Vhigh = 0 V to –1 V
If = lop @ Top
Min
5
50
1
1530
30
Max
35
2.2
100
80
1563
2.0
Unit
mA
V
mA
µW
dBm
nm
dB
dB
* Over 720 ps/nm (40 km version), 1440 ps/nm (80 km version).
Lucent Technologies Inc.
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