BYV29X-500.pdf 데이터시트 (총 7 페이지) - 파일 다운로드 BYV29X-500 데이타시트 다운로드

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Philips Semiconductors
Rectifier diodes
ultrafast
Product specification
BYV29F, BYV29X series
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Isolated mounting tab
SYMBOL
k
1
QUICK REFERENCE DATA
VR = 300 V/ 400 V/ 500 V
a VF 1.03 V
2
IF(AV) = 9 A
trr 60 ns
GENERAL DESCRIPTION
Ultra-fast epitaxial rectifier diodes intended for use in switched mode power supply output rectification, electronic
lighting ballasts and high frequency switching circuits in general.
The BYV29F series is supplied in the SOD100 package.
The BYV29X series is supplied in the SOD113 package.
PINNING
SOD100
SOD113
PIN DESCRIPTION
1 cathode (k)
case
case
2 anode (a)
tab isolated
12
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VR
IF(AV)
IFSM
Tstg
Tj
Peak repetitive reverse voltage
Continuous reverse voltage
Average forward current2
Non-repetitive peak forward
current
Storage temperature
Operating junction temperature
BYV29F/BYV29X
Ths 138˚C1
square wave; δ = 0.5;
Ths 90 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
VRRM(max)
-
-
-
-
-
-40
-
-300
300
300
MAX.
-400
400
400
9
100
110
150
150
-500
500
500
UNIT
V
V
A
A
A
˚C
˚C
1 Ths de-rating for thermal stability.
2 Neglecting switching and reverse current losses
February 1999
1
Rev 1.400

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Philips Semiconductors
Rectifier diodes
ultrafast
Product specification
BYV29F, BYV29X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol Peak isolation voltage from SOD100 package; R.H. 65%; clean and
all terminals to external
dustfree
heatsink
Visol R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz;
all terminals to external
sinusoidal waveform; R.H. 65%; clean
heatsink
and dustfree
Cisol Capacitance from pin 2 to f = 1 MHz
external heatsink
MIN. TYP. MAX. UNIT
- - 1500 V
- - 2500 V
- 10 - pF
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Rth j-a
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air.
MIN.
-
-
-
TYP.
-
-
55
MAX.
5.5
7.2
-
UNIT
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
VF Forward voltage
IR Reverse current
Qs Reverse recovery charge
trr Reverse recovery time
Irrm Peak reverse recovery current
Vfr Forward recovery voltage
CONDITIONS
IF = 8 A; Tj = 150˚C
IF = 8 A
IF = 20 A
VR = VRRM
VR = VRRM; Tj = 100 ˚C
IF = 2 A to VR 30 V;
dIF/dt = 20 A/µs
IF = 1 A to VR 30 V;
dIF/dt = 100 A/µs
IF = 10 A to VR 30 V;
dIF/dt = 50 A/µs; Tj = 100˚C
IF = 10 A; dIF/dt = 10 A/µs
MIN.
-
-
-
-
-
-
TYP.
0.90
1.05
1.20
2.0
0.1
40
MAX.
1.03
1.25
1.40
50
0.35
60
UNIT
V
V
V
µA
mA
nC
- 50 60 ns
- 4.0 5.5 A
- 2.5 -
V
February 1999
2
Rev 1.400

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Philips Semiconductors
Rectifier diodes
ultrafast
Product specification
BYV29F, BYV29X series
I
F
dI
F
dt
t
rr
time
Q
s
I
R
I
rrm
10% 100%
Fig.1. Definition of trr, Qs and Irrm
IF
time
VF
VF
Fig.2. Definition of Vfr
V fr
time
15 PF / W
Vo = 0.8900 V
Rs = 0.0190 Ohms
10
0.1
BYV29
0.5
0.2
Ths(max) / C
67.5
D = 1.0
95
5
I
tp
D=
tp
T
122.5
Tt
0 150
0
5 IF(AV) / A 10
15
Fig.3. Maximum forward dissipation PF = f(IF(AV));
square wave where IF(AV) =IF(RMS) x D.
12 PF / W
Vo = 0.89V
Rs = 0.019 Ohms
10
BYV29
2.2
8 2.8
4
6
Ths(max) / C 84
a = 1.57
1.9 95
106
117
4 128
2 139
0 150
0 2 4 6 8 10
IF(AV) / A
Fig.4. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
1000 trr / ns
100
IF=10 A
1A
10
Tj = 25 C
Tj = 100C
1
1 10
dIF/dt (A/us)
100
Fig.5. Maximum trr at Tj = 25˚C and 100˚C
Irrm / A
10
IF=10A
1
IF=1A
0.1
Tj = 25 C
Tj = 100C
0.01
1
10
-dIF/dt (A/us)
100
Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C.
February 1999
3
Rev 1.400

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Philips Semiconductors
Rectifier diodes
ultrafast
30 IF / A
Tj=150 C
Tj=25 C
20
typ
10
BYW29
max
0
0 0.5 1 1.5 2
VF / V
Fig.7. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Qs / nC
1000
IF = 10 A
100
2A
10
1
1.0
10
-dIF/dt (A/us)
Fig.8. Maximum Qs at Tj = 25˚C
100
Product specification
BYV29F, BYV29X series
10 Transient thermal impedance, Zth j-hs (K/W)
1
0.1
0.01
PD tp
D
=
tp
T
0.001
1us
10us
Tt
100us 1ms 10ms 100ms 1s
pulse width, tp (s)
BYV29F
10s
Fig.9. Transient thermal impedance Zth j-hs= f(tp)
February 1999
4
Rev 1.400

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Philips Semiconductors
Rectifier diodes
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Product specification
BYV29F, BYV29X series
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
4.0
seating
plane
4.4
max
2.9 max
7.9
7.5
17
max
3.5 max
not tinned
4.4
13.5
min
ka
0.4 M
0.9
0.7
5.08
top view
0.55 max
1.3
Fig.10. SOD100; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
February 1999
5
Rev 1.400