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LITE-ON
SEMICONDUCTOR
5.0SMCJ SERIES
SURFACE MOUNT
UNIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSORS
STAND-OFF VOLTAGE - 18 to 36 Volts
POWER DISSIPATION - 5000 WATTS
FEATURES
For surface mounted applications
Reliable low cost construction utilizing molded plastic
technique
Plastic material has UL flammability classification 94V-O
Fast response time: typically less than 1.0ns
RoHS compliant
MECHANICAL DATA
Case : Molded plastic
Polarity : by cathode band denotes uni-directional device
none cathode band denotes bi-directional device
Weight : 0.007 ounces, 0.21 gram
B
G
H
SMC
A
F
E
SMC
DIM. MIN. MAX.
A 6.60 7.11
C B 5.59 6.22
C 2.92 3.18
D 0.15 0.31
E 7.75 8.13
F 0.05 0.20
G 2.01 2.40
D H 0.76 1.52
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
PEAK POWER DISSIPATION AT TJ = 25 ,
TP = 1ms (Note 1)
SYMBOLS
PPK
VALUE
5000
Peak Forward Surge Current 8.3ms single half
sine-wave @TJ=25 (Note2)
Steady State Power Dissipation at TL =120 ,
see fig. 6
IFSM
PM(AV)
300
2.0
Operating Temperature Range
TJ
-55 to +175
Storage Temperature Range
TSTG
-55 to +175
NOTES : 1. Non-repetitive current pulse, per Fig. 3 and derated above TJ= 25 per Fig.1.
2. Only for unidirectional units.
UNIT
W ATTS
AMPS.
W ATTS
C
C
REV. 3, Jan-2016, KSIC03

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RATING AND CHARACTERISTIC CURVES
5.0SMCJ SERIES
FIG.1 - PULSE DERATING CURVE
100
75
50
25
10 X 1000 WAVEFORM
AS DEFINED BY R.E.A
0
0 25 50 75 100 125 150 175 200
JUNCTION TEMPERATURE,
FIG.3 - PULSE WAVEFORM
TR=10us
Peak value (IRSM)
100
Half
value=
I
RSM
2
50
TJ=25 C
Pulse width (TP) is defined
as that point where the
peak current decays to 50%
of IRSM
10 x 1000 waveform as
defined by R.E.A.
TP
0
0 1.0
2.0 3.0 4.0
T , TIME ( ms )
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
300
250
200
150
100
50
8.3ms Single Half-Sine-Wave
0
12
5
10
20
NUMBER OF CYCLES AT 60Hz
50
100
FIG.4 - TYPICAL JUNCTION CAPACITANCE
10
TJ = 25 C, f = 1MHz
Measured at Zero Bias
1
0 10 20 30 40
STAND-OFF VOLTAGE, VOLTS
FIG.5 - PULSE RATING CURVE
100
10
1.0
TA=25 C
8.0mm LEAD ARE AS
0.1
0.1us
1.0us
10us
NON-REPETITIVE
PULSE WAVEFORM
SHOWN IN FIG 3
100us
1.0ms
10ms
TP, PULSE WIDTH
FIG.6 - STEADY STATE POWER DERATING CURVE
2.0
1.6
1.2
0.8
0.4
0.0
0
60Hz RESISTIVE OR
INDUCTIVE LOAD
25 50 75 100 125 150
TL, LEAD TEMPERATURE,
175

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LITE-ON
SEMICONDUCTOR
Type
Number
Type
Number
Device
Marking code
Reverse
Standoff
Voltage
Breakdown Voltage
BV Volts @It
(UNI)
5.0SMCJ18
5.0SMCJ18A
5.0SMCJ20
5.0SMCJ20A
5.0SMCJ22
5.0SMCJ22A
5.0SMCJ24
5.0SMCJ24A
5.0SMCJ26
5.0SMCJ26A
5.0SMCJ28
5.0SMCJ28A
5.0SMCJ30
5.0SMCJ30A
5.0SMCJ33
5.0SMCJ33A
5.0SMCJ36
5.0SMCJ36A
(BI) (UNI) (BI) VR (V) Min (V) Max (V)
---
OES --
18.0
20.0
24.4
---
OET --
18.0
20.0
22.1
---
OEU --
20.0
22.2
27.1
---
OEV --
20.0
22.2
24.5
---
OEW --
22.0
24.4
29.8
---
OEX --
22.0
24.4
27.0
---
OEY --
24.0
26.7
32.6
---
OEZ --
24.0
26.7
29.5
---
OFD --
26.0
28.9
35.3
---
OFE --
26.0
28.9
31.9
---
OFF --
28.0
31.1
38.0
---
OFG --
28.0
31.1
34.4
---
OFH --
30.0
33.3
40.7
---
OFK --
30.0
33.3
36.8
---
OFL --
33.0
36.7
44.8
---
OFM --
33.0
36.7
40.6
---
OFN --
36.0
40.0
48.9
---
OFP --
36.0
40.0
44.2
NOTES:
Suffix 'A' denotes 5% tolerance device, no suffix denotes 10% tolerance device .
It (mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Max.
Reverse
Leakage
@VR
Max.
Clamping
Voltage
@Ipp
IR (uA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5
5
5
5
5
5
5
5
5
5
Vc (V)
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
59.0
53.3
64.3
58.1
Max.
Peak
Pulse
Current
Ipp (A)
155.3
171.2
139.7
154.3
126.9
140.8
116.3
128.5
107.3
118.8
100.0
110.1
93.5
103.3
84.7
93.8
77.8
86.1