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T0505xH
® T0509xH
SENSITIVE GATE TRIACS
FEATURES
IT(RMS) = 5A
VDRM = 400V to 800V
IGT 5mA to 10mA
A1
A2
G
DESCRIPTION
The T05xxxH series of triacs uses a high
performance MESA GLASS technology. These
parts are intended for general purpose
applications where gate high sensitivity is
required.
TO220
non-insulated
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RM S)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Parameter
RMS on-state current
(360° conduction angle)
Tc= 100 °C
Non repetitive surge peak on-state current
(Tj initial = 25°C )
I2t Value for fusing
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Critical rate of rise of on-state current
IG = 50 mA diG /dt = 0.1 A/µs.
Repetitive
F = 50 Hz
Non
Repetitive
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10s at
4.5mm from case
Value
5
42
40
8
10
50
- 40, + 150
- 40, + 125
260
Unit
A
A
A2s
A/µs
°C
°C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C
January 1995
Voltage
Unit
DM S N
400 600 700 800 V
1/5

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T0505xH / T0509xH
THERMAL RESISTANCES
Symbol
Rth(j-a)
Rth(j-c)
Rth(j-c)
Parameter
Junction to ambient
Junction to case for D.C
Junction to case for A.C 360° conduction angle (F=50Hz)
GATE CHARACTERISTICS (maximum values)
PG (AV)= 1 W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
IGT VD=12V (DC) RL=33Tj= 25°C I-II-III-IV MAX
VGT VD=12V (DC) RL=33Tj= 25°C I-II-III-IV MAX
VGD
VD=VDRM RL=3.3k
Tj= 125°C I-II-III-IV MIN
tgt VD=VDRM IG = 40mA Tj= 25°C I-II-III-IV TYP
IT = 7.1A
dIG/dt = 0.5A/µs
IH * IT= 50mA Gate open Tj= 25°C
MAX
IL IG= 1.2 IGT
Tj= 25°C I-III-IV TYP
II TYP
VTM * ITM= 7.1A tp= 380µs
Tj= 25°C
MAX
IDRM
IRRM
VD = VDRM
VR = VRRM
Tj= 25°C
Tj= 110°C
MAX
MAX
dV/dt * VD=67%VDRM
Gate open
Tj= 110°C
MIN
TYP
(dV/dt)c * (dI/dt)c = 2.2 A/ms
Tj= 110°C
TYP
* For either polarity of electrode A2 voltage with reference to electrode A1
Value
60
5.3
4
Sensitivity
05 09
5 10
1.5
0.2
2
5 10
5 10
10 20
1.65
5
1.5
20
10
12
Unit
°C/W
°C/W
°C/W
Unit
mA
V
V
µs
mA
mA
V
µA
mA
V/µs
V/µs
ORDERING INFORMATION
T
TRIAC MESA GLASS
CURRENT
2/5
05 09 M
SENSITIVITY
®
H
PACKAGE :
H = TO220 Non-insulated
VOLTAGE

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Fig.1 : Maximum RMS power dissipation versus
RMS on-state current.
T0505xH / T0509xH
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
P(W)
7
6
5
4
3
180 O
= 180o
= 120o
= 90o
= 60o
2 = 30o
1
0
0123
I T(RMS) (A)
45
P (W)
7
6
5
Tcase (oC)
Rth = 0 o C/W
5o C/W
-100
10o C/W
15o C/W
-105
4 -110
3
-115
2
1 -120
Tamb (oC)
0 -125
0 20 40 60 80 100 120 140
Fig.3 : RMS on-state current versus case tempera-
ture.
I T(RMS)(A)
6
5
4
= 180o
3
2
1
Tcas e(oC )
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.4 : Relative variation of thermal impedance
versus pulse duration.
Zth/Rth
1
Zt h( j-c)
0.1 Zth(j-a)
0.01
1E-3
1E-2
1E-1
1E +0
tp (s)
1E+1 1E+2 5E+2
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Igt[Tj]
Igt[Tj=25 o C]
2.6
2.4
2.2
2.0
Ih[Tj]
Ih[Tj=25 o C]
1.8 Igt
1.6
1.4
1.2 Ih
1.0
0.8
0.6
Tj(oC)
0.4
-40 -20 0 20 40 60 80 100 120 140
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
ITS M(A)
40
35
30
25
20
15
10
5 Number of cycles
0
1 10
Tj initial = 25oC
100 100 0
3/5
®