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TISP4070H3BJ THRU TISP4115H3BJ,
TISP4125H3BJ THRU TISP4220H3BJ,
TISP4240H3BJ THRU TISP4400H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4xxxH3BJ Overvoltage Protector Series
TISP4xxxH3BJ Overview
This TISP® device series protects central office, access and customer premise equipment against overvoltages on the telecom line. The
TISP4xxxH3BJ is available in a wide range of voltages and has a high current capability, allowing minimal series resistance to be used. These
protectors have been specified mindful of the following standards and recommendations: GR-1089-CORE, FCC Part 68, UL1950, EN 60950,
IEC 60950, ITU-T K.20, K.21 and K.45. The TISP4350H3BJ meets the FCC Part 68 “B” ringer voltage requirement and survives the Type A and
B impulse tests. These devices are housed in a surface mount SMB (DO-214AA) package.
Summary Electrical Characteristics
Part #
VDRM
V
V(BO)
V
VT @ IT
V
IDRM
µA
I(BO)
mA
IT
A
IH
Co @ -2 V
Functionally
mA pF
Replaces
TISP4070H3
58
70
3
5 600 5 150 120 P0640SC†
TISP4080H3
65
80
3
5 600 5 150 120 P0720SC†
TISP4095H3
75
95
3
5 600 5 150 120 P0900SC†
TISP4115 H3
90
115
3
5 600 5 150 120 P1100SC†
TISP4125H3
100
125
3
5 600 5 150 65
TISP4145H3
120
145
3
5 600
5 150 65
P1300SC†
TISP4165H3
135
165
3
5 600 5 150 65
TISP4180H3
145
180
3
5 600 5 150 65
P1500SC
TISP4200H3
155
200
3
5 600 5 150 65
TISP4220H3
160
220
3
5 600 5 150 65
P1800SC
TISP4240H3
180
240
3
5 600 5 150 55
TISP4250H3
190
250
3
5 600
5 150 55
P2300SC†
TISP4265H3
200
265
3
5 600 5 150 55
TISP4290H3
220
290
3
5 600
5 150 55
P2600SC†
TISP4300H3
230
300
3
5 600 5 150 55
TISP4350H3
275
350
3
5 600 5 150 55
P3100SC
TISP4395H3
320
395
3
5 600 5 150 55
P3500SC
TISP4400H3
300
400
3
5 600 5 150 55
† Bourns part has an improved protection voltage
Summary Current Ratings
Parameter
Waveshape 2/10 1.2/50, 8/20
Value
500
300
10/160
250
ITSP
A
5/320
200
10/560
160
10/1000
100
ITSM
A
1 cycle 60 Hz
60
di/dt
A/µs
2/10 Wavefront
400
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.

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TISP4xxxH3BJ Overvoltage Protector Series
ITU-T K.20/21 Rating . . . . . . . . . . . . . 8 kV 10/700, 200 A 5/310
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Device
VDRM
V
V(BO)
V
‘4070 58 70
‘4080 65 80
‘4095 75 95
‘4115
90 115
‘4125
100 125
‘4145
120 145
‘4165
135 165
‘4180
145 180
‘4200
155 200
‘4220
160 220
‘4240
180 240
‘4250
190 250
‘4265
200 265
‘4290
220 290
‘4300
230 300
‘4350
275 350
‘4395
320 395
‘4400
300 400
Low Differential Capacitance ...................................67 pF max.
............................................... UL Recognized Component
SMBJ Package (Top View)
R(B) 1
Device Symbol
2 T(A)
MDXXBG
T
SD4XAA
R
Terminals T and R correspond to the
alternative line designators of A and B
Rated for International Surge Wave Shapes
Waveshape
Standard
ITSP
A
2/10 µs
GR-1089-CORE 500
8/20 µs
IEC 61000-4-5 300
10/160 µs
FCC Part 68
250
10/700 µs
ITU-T K.20/21 200
10/560 µs
FCC Part 68
160
10/1000 µs GR-1089-CORE 100
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as
the diverted current subsides.
This TISP4xxxH3BJ range consists of eighteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices
are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and
holding current values, consult the factory. For lower rated impulse currents in the SMB package, the 50 A 10/1000 TISP4xxxM3BJ series is
available.
How To Order
Device
Package
Carrier
Order As
Embossed Tape Reeled
TISP4xxxH3BJ BJ (J-Bend DO-214AA/SMB)
Bulk Pack
TISP4xxxH3BJR-S
TISP4xxxH3BJ-S
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etc.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.

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TISP4xxxH3BJ Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
Repetitive peak off-state voltage, (see Note 1)
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator)
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 10/700 µs voltage wave shape)
0.2/310 µs (I3124, 0.5/700 µs voltage wave shape)
5/310 µs (ITU-T K.20/21, 10/700 µs voltage wave shape)
5/310 µs (FTZ R12, 10/700 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A
Junction temperature
Storage temperature range
Symbol
VDRM
ITSP
ITSM
diT/dt
TJ
Tstg
Value
± 58
± 65
± 75
± 90
±100
±120
±135
±145
±155
±160
±180
±190
±200
±220
±230
±275
±320
±300
500
300
250
220
200
200
200
160
100
55
60
2.1
400
-40 to +150
-65 to +150
Unit
V
A
A
A/µs
°C
°C
NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.
2. Initially, the TISP4xxxH3BJ must be in thermal equilibrium with TJ = 25 °C.
3. The surge may be repeated after the TISP4xxxH3BJ returns to its initial conditions.
4. See Applications Information and Figure 11 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient
temperatures above 25 °C.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.

No Preview Available !

TISP4xxxH3BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
Repetitive peak off-
IDRM state current
VD = VDRM
V(BO) Breakover voltage
dv/dt = ±750 V/ms, RSOURCE = 300
Impulse breakover
V(BO) voltage
dv/dt ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
I(BO)
VT
IH
dv/dt
ID
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt = ±750 V/ms, RSOURCE = 300
IT = ±5 A, tW = 100 µs
IT = ±5 A, di/dt = - /+30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85VDRM
VD = ±50 V
Min. Typ. Max.
TA = 25 °C
TA = 85 °C
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
±5
±10
±70
±80
±95
±115
±125
±145
±165
±180
±200
±220
±240
±250
±265
±290
±300
±350
±395
±400
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
±78
±88
±103
±124
±134
±154
±174
±189
±210
±230
±250
±261
±276
±301
±311
±362
±408
±413
±0.15
±0.6
±3
±0.15
±0.6
Unit
µA
V
V
A
V
A
±5 kV/µs
TA = 85 °C
±10 µA
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.

No Preview Available !

TISP4xxxH3BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) (continued)
Parameter
Test Conditions
Min. Typ. Max.
f = 100 kHz, Vd = 1 V rms, VD = 0,
f = 100 kHz, Vd = 1 V rms, VD = -1 V
Coff Off-state capacitance f = 100 kHz, Vd = 1 V rms, VD = -2 V
f = 100 kHz, Vd = 1 V rms, VD = -50 V
f = 100 kHz, Vd = 1 V rms, VD = -100 V
(see Note 6)
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4125 thru ‘4220
‘4240 thru ‘4400
145 170
80 90
70 84
130 150
71 79
60 67
120 140
65 74
55 62
62 73
30 35
24 28
28 33
22 26
Unit
pF
NOTE 6: To avoid possible voltage clipping, the ‘4125 is tested with VD = -98 V.
Thermal Characteristics
Parameter
RθJA Junction to free air thermal resistance
Test Conditions
EIA/JESD51-3 PCB, IT = ITSM(1000),
TA = 25 °C, (see Note 7)
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000), TA = 25 °C
Min. Typ. Max. Unit
113
°C/W
50
NOTE 7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.