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PxxxxLB Series Thyristors Solid Protection Device
PxxxxLB Series
Thyristors Solid Protection Device Bidirectional transient voltage suppressors
Features
For surface mounted applications to optimize board space
Low profile package
Bidirectional crowbar protection
Low leakage current : I = 5uA max
Low on-state voltage
Low Capacitance
Response Time is < 1us
YD/T 950 IEC 61000-4-5
YD/T 993 ITU K.20/21
YD/T 1082 TIA-968-A
GR 1089 Intra-building
Solid-state silicon technology
Meets MSL 1 Requirements
ROHS compliant
WeiPan technology
DO-15
Ordering Information
Device
PxxxxLB
PxxxxLB
Qty per Reel
4000
2000
Reel Size
13 Inch
T/R
Schematic Diagram
Maximum Ratings and Electrical Characteristics
Symbol
Parameter
IPP Non-repetitive peak pulse current
VPP
VESD
Ts
Tj
Non-repetitive peak pulse voltage
ESD Rating per IEC61000-4-2
Storage temperature range
Maximum junction temperature
Contact
Air
10/1000 us
5/310 us
8/20 us
10/700us
Value
80
100
250
4000
8
15
-40 to +150
150
Unit
A
V
KV
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
*Other voltages may be available upon request.
E-mail:support@wpmsemi.com
021-57621210www.wpmsemi.com
Revision:A2.2
Tel:+86 021-67841922 Fax:+86 021-57621210

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PxxxxLB Series Thyristors Solid Protection Device
Electrical Parameters
VRM
Type
Min.
V
(Tamb=25)
IRM VBO
Max.
μA V
IBO
Max.
mA
VT IT
Max.
VA
P0080LB
6
5 25 800
4
2.2
P0300LB
25
5
40
800
4
2.2
P0640LB
58
5
77
800
4
2.2
P0720LB
65
5
88
800
4
2.2
P0900LB
75
5
98
800
4
2.2
P1100LB
90
5 130 800
4
2.2
P1300LB
120
5
160
800
4
2.2
P1500LB
140
5
180
800
4
2.2
P1800LB
170
5
220
800
4
2.2
P2000LB
180
5
220
800
4
2.2
P2300LB
190
5
260
800
4
2.2
P2600LB
220
5
300
800
4
2.2
P3100LB
275
5
350
800
4
2.2
P3500LB
320
5
400
800
4
2.2
P4000LB
360
5
460
800
4
2.2
P4500LB
460
5
540
800
4
2.2
P5000LB
500
5
600
800
4
2.2
Notes:
• All measurements are made at an ambient temperature of 25. IPP applies to -40through +85temperature range.
• Off-state capacitance (CO) is measured at 1 MHz with a 2 V bias and is typical value.
CO
Typ.
pF
85
85
60
60
55
55
55
60
60
60
55
50
45
40
40
40
40
IH
Typ.
mA
50
50
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Symbol
VRM
VBR
VBO
IBO
IRM
IPP
IH
VT
CO
Parameter
Stand-off voltage
Breakdown voltage
Switching Voltage
Breakover current
Leakage current at VRM
Peak pulse current
Holding current
On-state Voltage at IT
Off-state Capacitance
VBO VRM
IBO
Ih
IR
IR
Ih
IBO
VVRM
VBO
E-mail:support@wpmsemi.com
021-57621210www.wpmsemi.com
Revision:A2.2
Tel:+86 021-67841922 Fax:+86 021-57621210

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PxxxxLB Series Thyristors Solid Protection Device
Typical electrical characterist applications
Rating and Characteristics Curves
%IPP
100
Repetitive peak current
Tr=rise time(us)
Tp =pulse duration time (us)
50
tr tp
0 Fig.1 Pulse Waveform (5/310us)
1
C[VR]/C[VR=1V]
Tj=25
F=1MHZ
0.8
VRMS=1V
0.6
0.4
0.2
VR(V)
0
1 2 5 10 20 50 100 300
Fig. 2 Relation Variation of Junction Capacitance
Versus Reverse Voltage Applied (Typical Values)
40
ITSM(A)
30
F=50HZ
Tj=25
100
IT(A)
Tj=25
20
10
t(s)
0
1.E-02
1.E-01 1.E+00 1.E+01 1.E+02
1.E+03
Fig.3 Non Repetitive Surge Peek On-State
Current Versus Overload Duration
10
0
VT(V)
12345678
Fig.4 On-State Voltage Versus On-State Current
(Typical Values)
2.0
IH(TJ)/IH[Tj=25]
1.0
0
-40 -20
0
Tj()
20 40 60 80 100 120 130
Fig.5 Relative Variation of Hold Current
Versus Junction Temperature
1.08
1.07 VBO[Tj]/VBO[Tj=25]
1.06
1.05
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96 Tj()
0.95
0.94
-40 -20 0 20 40 60 80 100 120 130
Fig.6 Relative Variation of Break Over Voltage
Versus Junction Temperature
E-mail:support@wpmsemi.com
021-57621210www.wpmsemi.com
Revision:A2.2
Tel:+86 021-67841922 Fax:+86 021-57621210