ATF-25735.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 ATF-25735 데이타시트 다운로드

No Preview Available !

0.5–10 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-25735
Features
• High Output Power:
19.0␣ Bm Typical P 1dB at 4␣ GHz
• High Gain:
12.5␣ dB Typical G 1 dB at 4 GHz
• Low Noise Figure:
1.2 dB Typical at 4 GHz
• Cost Effective Ceramic
Microstrip Package
Description
The ATF-25735 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
microstrip package. This device is
designed for use in general
purpose amplifier and oscillator
applications in the 0.5-10 GHz
frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
35 micro-X Package
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
NFO Optimum Noise Figure: VDS = 3 V, IDS = 20 mA
GA Gain @ NFO: VDS = 3 V, IDS = 20 mA
P1 dB
G1 dB
gm
IDSS
VP
Power Output @ 1 dB Gain Compression:
VDS =5 V, IDS = 50 mA
1 dB Compressed Gain: VDS = 5 V, IDS =50 mA
Transconductance: VDS =3 V, VGS = 0 V
Saturated Drain Current: VDS =3 V, VGS = 0 V
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA
Units
f = 2. 0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f =.6.0 GHz
dB
dB
f = 4.0 GHz dBm
Min.
11.5
Typ.
1.0
1.2
1.4
15.0
13.0
10.5
19.0
Max.
1.5
f = 4.0 GHz
dB
mmho
mA
V
50
50
-3.0
12.5
80
100 150
-2.0 -0.8
5-63
5965-8710E

No Preview Available !

ATF-25735 Absolute Maximum Ratings
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation [2,3]
Channel Temperature
Storage Temperature[4]
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum[1]
+7
-4
-8
IDSS
450
175
-65 to +175
Thermal Resistance:
Liquid Crystal Measurement:
θjc = 325°C/W; TCH= 150°C
1␣ µm Spot Size[5[
ATF-25735 Typical Performance, TA = 25°C
25 25
20
MSG
MSG
20
15 15
10 |S21|2
MAG 10 |S21|2
MAG
MSG
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 3 mW/°C for
TCASE > 29°C.
4. Storage above +150°C may tarnish
the leads of this package difficult to
solder into a circuit. After a device
has been soldered into a circuit, it
may be safely stored up to 175°C.
5. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
more information.
55
0
0.5 1.0
2.0 4.0 6.0 8.0 12.0
FREQUENCY (GHz)
Figure 1. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 3 V, IDS = 20 mA.
0
0.5 1.0
2.0 4.0 6.0 8.0 12.0
FREQUENCY (GHz)
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 5 V, IDS = 50 mA.
5-64

No Preview Available !

Typical Scattering Parameters, Common Emitter, ZO = 50 , TA = 25°C, VDS = 3 V,IDS␣ =␣ 20mA
Freq.
GHz
S11
Mag. Ang.
S21
dB Mag. Ang.
S12 S22
dB Mag. Ang. Mag. Ang.
0.5
.98 -22
13.9 4.95 159
-32.0 .025 77
.52 -12
1.0
.94 -45
13.3 4.61 142
-27.1 .044 64
.52 -20
2.0
.85 -82
12.2 4.06 110
-21.6 .083 45
.46 -41
3.0
.70 -116
11.0 3.54 81
-19.3 .109 24
.38 -61
4.0
.58 -152
10.0 3.17 54
-17.7 .131 12
.35 -81
5.0
.50 165
8.9 2.78 27
-16.7 .146 -7
.29 -97
6.0
.52 122
7.7 2.43 1
-16.1
.156 -20
.18 -112
7.0 .59 90
6.3 2.06 -23
-15.8
.162 -34
.07 -161
8.0 .65 66
5.1 1.79 -43
-15.5
.167 -46
.09 107
9.0 .69 44
3.8 1.55 -63
-15.3
.172 -53
.15 76
10.0 .73 32
2.7 1.36 -82
-15.4
.170 -65
.18 53
11.0 .79 20
1.1
1.14 -100
-15.5
.168 -78
.21 24
12.0 .84 7
-0.2
.98 -119
-15.7
.161 -93
.26 -5
Typical Scattering Parameters, Common Emitter, ZO = 50 , TA = 25°C, VDS = 5 V,IDS␣ =␣ 50mA
Freq.
GHz
S11
Mag. Ang.
S21
dB Mag. Ang.
S12 S22
dB Mag. Ang. Mag. Ang.
0.5
.93 -21
16.0 6.29 156
-34.0 .020 69
.56 -10
1.0
.88 -42
15.4 5.89 140
-29.6 .033 62
.53 -21
2.0
.78 -81
14.1 5.08 108
-24.4 .060 49
.47 -43
3.0
.65 -112
12.6 4.27 83
-22.6 .074 39
.44 -55
4.0
.55 -142
11.4 3.73 58
-21.0 .089 28
.41 -64
5.0
.48 -176
10.6 3.37 36
-19.7 .104 20
.37 -69
6.0
.47 142
9.7 3.04 10
-18.3 .122 6
.28 -83
7.0 .56 104 8.4 2.64 -14 -17.5 .134 -6 .14 -105
8.0 .65 80
7.0 2.25 -35
-16.7
.146 -17
.07 172
9.0 .73 61
5.8 1.94 -53
-16.1
.157 -26
.14 113
10.0 .78 47
4.7 1.71 -72
-15.4
.169 -40
.20 94
11.0 .80 34
3.6 1.51 -90
-15.1
.176 -53
.27 68
12.0 .85 18
2.7
1.36 -109
-14.8
.181 -64
.36 45
A model for this device is available in the DEVICE MODELS section.
5-65

No Preview Available !

35 micro-X Package Dimensions
.085
4 SOURCE
2.15
.083
2.11
DIA.
GATE
1
.057 ± .010
1.45 ± .25
DRAIN
3
2 SOURCE
.020
.508
Notes:
(unless otherwise specified)
1. Dimensions are in
.100
2.54
2. Tolerances
mm
in .xxx = ± 0.005
mm .xx = ± 0.13
.022
.56
.455 ± .030
11.54 ± .76
.006 ± .002
.15 ± .05
5-66