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PC123XNNSZ0F Series
PC123XNNSZ0F DIP 4pin Reinforced Insulation Type
Photocoupler
Series
Description
PC123XNNSZ0F Series contains an IRED optically
coupled to a phototransistor.
It is packaged in a 4-pin DIP, available in wide-lead
spacing option and SMT gullwing lead-form option.
Input-output isolation voltage(rms) is 5kV.
CTR is 50% to 400% at input current of 5mA
Features
1. 4-pin DIP package
2. Double transfer mold package (Ideal for Flow Solder-
ing)
3. Current transfer ratio (CTR : MIN. 50% at IF=5 mA,
VCE=5V)
4. Several CTR ranks available
5. Reinforced insulation type (Isolation distance : MIN.
0.4mm)
6. Long creepage distance type (wide lead-form type
only : MIN. 8mm)
7. High isolation voltage between input and output
(Viso(rms) : 5kV)
8. RoHS directive compliant
Agency approvals/Compliance
1. Recognized by UL1577 (Double protection isolation),
le No. E64380 (as model No. PC123)
2. Approved by BSI, BS-EN60065, file No. 7087, BS-
EN60950 le No. 7409, (as model No. PC123)
3. Approved by SEMKO, EN60065, EN60950, (as mod-
el No. PC123)
4. Approved by DEMKO, EN60065, EN60950, (as mod-
el No. PC123)
5. Approved by NEMKO, EN60065, EN60950, (as mod-
el No. PC123)
6. Approved by FIMKO, EN60065, EN60950, (as model
No. PC123)
7. Recognized by CSA le No. CA95323, (as model No.
PC123)
8. Approved by VDE, DIN EN60747-5-2() (as an op-
tion), le No. 40008087 (as model No. PC123)
9. Package resin : UL ammability grade (94V - 0)
() DIN EN60747-5-2 : successor standard of DIN VDE0884.
Applications
1. I/O isolation for MCUs (Micro Controller Units)
2. Noise suppression in switching circuits
3. Signal transmission between circuits of different po-
tentials and impedances
4. Over voltage detection
Notice The content of data sheet is subject to change without prior notice.
In the absence of conrmation by device specication sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specication sheets before using any SHARP device.
Sheet No.: D2-A09501FEN
1 Date Sep. 1. 2006
© SHARP Corporation

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Internal Connection Diagram
1 Anode
14
2 Cathode
3 Emitter
2 3 4 Collector
Outline Dimensions
1. Through-Hole [ex. PC123XNNSZ0F]
Anode mark
Rank mark
Factory identification mark
Date code
14
PC123
23
6.5±0.3
7.62±0.30
4.58±0.30
PC123XNNSZ0F Series
(Unit : mm)
2. Through-Hole (VDE option)
[ex. PC123XNYSZ0F]
Anode mark
Rank mark
Factory identification mark
Date code
14
PC123
2 43
6.5±0.3
SHARP mark "S"
VDE idenfication mark
7.62±0.30
4.58±0.30
Epoxy resin
0.26±0.10
θ θ : 0 to 13˚
θ
Product mass : approx. 0.23g
0.5±0.1
3. Wide Through-Hole Lead-Form
[ex. PC123XNNFZ0F]
Rank mark
Anode mark
1
Factory identification mark
Date code
4
2 PC123 3
6.5±0.3
7.62±0.30
4.58±0.30
Epoxy resin
0.26±0.10
θ θ : 0 to 13˚ θ
Product mass : approx. 0.23g
0.5±0.1
4. Wide Through-Hole Lead-Form (VDE option)
[ex. PC123XNYFZ0F]
Rank mark
Anode mark
1
Factory identification mark
Date code
4
2 PC123 3
4
6.5±0.3
SHARP mark "S"
VDE idenfication mark
7.62±0.30
4.58±0.30
Epoxy resin
10.16±0.50
0.26±0.10
Product mass : approx. 0.23g
0.5±0.1
Epoxy resin
10.16±0.50
0.26±0.10
0.5±0.1
Product mass : approx. 0.23g
2
Sheet No.: D2-A09501FEN

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5. SMT Gullwing Lead-Form (VDE option)
[ex. PC123XNYIP0F]
Rank mark
Anode mark
1
Factory identification mark
Date code
4
2 PC123 3
4
SHARP mark "S"
6.5±0.3
7.62±0.30
VDE
idenfication mark
4.58±0.30
PC123XNNSZ0F Series
6. Wide SMT Gullwing Lead-Form
[ex. PC123XNNUP0F]
(Unit : mm)
Rank mark
Anode mark
1
Factory identification mark
Date code
4
2
PC123
3
6.5±0.3
7.62±0.30
4.58±0.30
1.0+00..40
Epoxy resin
10.0+00..50
1.0+00..40
Product mass : approx. 0.22g
2.54±0.25
0.75±0.25
Epoxy resin
10.16±0.50
12MAX
0.75±0.25
Product mass : approx. 0.22g
7. Wide SMT Gullwing Lead-Form (VDE option)
[ex. PC123XNYUP0F]
Rank mark
Anode mark
1
Factory identification mark
Date code
4
2
PC123
3
4
6.5±0.3
SHARP mark "S"
VDE
idenfication mark
7.62±0.30
4.58±0.30
0.5±0.1
0.75±0.25
Epoxy resin
10.16±0.50
12MAX
0.75±0.25
Product mass : approx. 0.22g
0.5±0.1
Sheet No.: D2-A09501FEN
3

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Date code (2 digit)
1st digit
Year of production
A.D. Mark A.D.
1990 A 2002
1991 B 2003
1992 C 2004
1993 D 2005
1994 E 2006
1995 F 2007
1996 H 2008
1997 J 2009
1998 K 2010
1999 L 2011
2000 M 2012
2001
N
:
Mark
P
R
S
T
U
V
W
X
A
B
C
:
repeats in a 20 year cycle
2nd digit
Month of production
Month
Mark
January
1
February
2
March
3
April
4
May 5
June 6
July 7
August
8
September
9
October
O
November
N
December
D
Factory identication mark and Plating material
Factory identication Mark
Country of origin
Plating material
no mark
Japan
SnCu (Cu : TYP. 2%)
or
Indonesia
SnBi (Bi : TYP. 2%)
or SnCu (Cu : TYP. 2%)*
China
SnCu (Cu : TYP. 2%)
* Up to Date code "T4" (April 2005), SnBi (Bi : TYP. 2%).
** This factory marking is for identication purpose only.
Please contact the local SHARP sales representative to see the actural status of the production.
Rank mark
Refer to the Model Line-up table.
PC123XNNSZ0F Series
Sheet No.: D2-A09501FEN
4

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Absolute Maximum Ratings
Parameter
Forward current
*1 Peak forward current
Input
Reverse voltage
Power dissipation
Output
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
*2 Isolation voltage
Operating temperature
Storage temperature
*2 Soldering temperature
*1 Pulse width100ms, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1 minute, f = 60Hz
*3 For 10s
Symbol
IF
IFM
VR
P
VCEO
VECO
IC
PC
Ptot
Viso(rms)
Topr
Tstg
Tsol
Rating
50
1
6
70
70
6
50
150
200
5
30 to +100
55 to +125
260
(Ta=25̊C)
Unit
mA
A
V
mW
V
V
mA
mW
mW
kV
̊C
̊C
̊C
PC123XNNSZ0F Series
Electro-optical Characteristics
Input
Output
Transfer
charac
teristics
Parameter
Forward voltage
Reverse current
Terminal capacitance
Collector dark current
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector current
Collector-emitter saturation voltage
Isolation resistance
Floating capacitance
Cut-off frequency
Response time
Rise time
Fall time
Symbol
VF
IR
Ct
ICEO
BVCEO
BVECO
IC
VCE(sat)
RISO
Cf
fC
tr
tf
Condition
IF=20mA
VR=4V
V=0, f=1kHz
VCE=50V, IF=0
IC=0.1mA, IF=0
IE=10μA, IF=0
IF=5mA, VCE=5V
IF=20mA, IC=1mA
DC500V, 40 to 60%RH
V=0, f=1MHz
VCE=5V, IC=2mA, RL=100Ω, 3dB
VCE=2V, IC=2mA, RL=100Ω
MIN.
70
6
2.5
5×1010
TYP.
1.2
30
0.1
1×1011
0.6
80
4
3
(Ta=25̊C)
MAX. Unit
1.4 V
10 μA
250 pF
100 nA
V
nA
20 mA
0.2 V
−Ω
1 pF
kHz
18 μs
18 μs
Sheet No.: D2-A09501FEN
5