2SB1202.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 2SB1202 데이타시트 다운로드

No Preview Available !

Production specification
PNP Epitaxial Planar Silicon Transistors
FEATURES
z Adoption of FBET,MBIT processes.
Pb
z Large current capacity and wide ASO. Lead-free
z Low collector-to-emitter saturation voltage.
z Fast switching speed.
z Small and slim package making it easy to
Make 2SB1202-used sets smaller.
APPLICATIONS
z High-Current Switching Applications.
z Voltage regulators,relay drivers,lamp drivers,
Electrical equipment.
TO-251
2SB1202
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
-60 V
VCEO
Collector-Emitter Voltage
-50 V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current
-3 A
ICP Collector Power Dissipation
-6 A
PC Collector Power Dissipation
1W
Tj ,Tstg
Junction and Storage temperature range
-55 to +150
V/(W)008
Rev.A
www.gmicroelec.com
1

No Preview Available !

Production specification
PNP Epitaxial Planar Silicon Transistors
2SB1202
ELECTRICAL CHARACTERISTICS@ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage VCBO
Collector-emitter breakdown voltage VCEO
Emitter-base breakdown voltage
VEBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
VBE(sat)
fT
Cob
IC=-10uA,IE=0
IC=-1mA,IB=0
IE=-10uA,IC=0
VCB=-40V,IE=0
VEBO=-4V,IC=0
VCE=-2V,IC=-100mA
VCE=-2V,IC=-3A
IC=-2A ,IB=-0.1A
IC=-2A ,IB=-0.1A
VCE=-10V,IE=-50mA
VCB=-10V,f=1MHz
-60 V
-50 V
-6 V
-1 uA
-1 uA
100 560
35
-0.35 -0.7 V
-0.94 -1.2 V
150 MHz
39 pF
CLASSIFICATION OF hFE(1)
Rank
Range
R
100-200
S
140-280
T
200-400
U
280-560
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
V/(W)008
Rev.A
www.gmicroelec.com
2

No Preview Available !

PNP Epitaxial Planar Silicon Transistors
Production specification
2SB1202
V/(W)008
Rev.A
www.gmicroelec.com
3

No Preview Available !

PNP Epitaxial Planar Silicon Transistors
PACKAGE OUTLINE
Plastic surface mounted package
Production specification
2SB1202
TO-251
TO-251
A 2.200 2.400
b 0.500 0.700
c 0.460 0.580
D 6.500 6.700
D1 5.100 5.460
D2 4.830 Typ.
E 6.000 6.200
e 2.186 2.386
L 12.000 12.600
L1 5.100 Typ.
L2 1.400 1.700
Φ 1.100 1.300
h 0.000 0.300
V 5.350 Typ.
All Dimensions in mm
PACKAGE OUTLINE
Plastic surface mounted package
CD
AK
HI
E
TO-252
TO-252
A 4.95 5.59
B 5.40 6.63
C 6.05 7.10
D 2.20 2.40
E 0.40 0.61
F 8.80 10.60
G 5.35 Typ.
H 1.98 2.59
I 0.50 0.90
J 0.50 1.20
K 0.45 0.89
All Dimensions in mm
V/(W)008
Rev.A
www.gmicroelec.com
4

No Preview Available !

PNP Epitaxial Planar Silicon Transistors
SOLDERING FOOTPRINT
6.40
Production specification
2SB1202
1.80
2.30 2.30
Unit:mm
PACKAGE INFORMATION
Device
Package
Shipping
2SB1202
TO-251/252
TO-252
80PCS/Tube
2500PCS/Tape&Reel
V/(W)008
Rev.A
www.gmicroelec.com
5