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Low Noise, Cascadable
Silicon Bipolar MMIC Amplifier
Technical Data
INA-01170
Features
• Cascadable 50 Gain Block
• Low Noise Figure:
1.7 dB Typical at 100 MHz
• High Gain:
32.5 dB Typical at 100 MHz
• 3 dB Bandwidth:
DC to 500 MHz
• Unconditionally Stable
(k>1)
• Hermetic Gold-Ceramic
Surface Mount Package
Description
The INA-01170 is a low-noise silicon
bipolar Monolithic Microwave
Integrated Circuit (MMIC) feedback
amplifier housed in a hermetic, high
reliability package. It is designed for
narrow or wide bandwidth indus-
trial and military applications that
require high gain and low noise IF
or RF amplification.
The INA series of MMICs is
fabricated using HP’s 10 GHz fT,
25 GHz fMAX, ISOSAT™-I silicon
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielec-
tric and scratch protection to
achieve excellent performance,
uniformity and reliability.
70 mil Package
Typical Biasing Configuration
VCC > 8 V
RFC (Optional)
RF IN
Cblock
4
3
1
2
Rbias (Required)
Cblock
Vd = 5.5 V
RF OUT

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2
INA-01170 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
50 mA
Thermal Resistance[2,4]:
θjc = 140°C/W
Power Dissipation [2,3]
RF Input Power
Junction Temperature
Storage Temperature
400 mW
+13 dBm
200°C
–65 to 200°C
INA-01170 Electrical Specifications[1], TA = 25°C
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 7.1 mW/°C for TC > 144°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Symbol
Parameters and Test Conditions: Id = 35 mA, ZO = 50
GP Power Gain (|S21| 2)
f = 100 MHz
Units Min. Typ. Max.
dB 30 32.5 35
GP
f3 dB
ISO
Gain Flatness
3 dB Bandwidth[2]
Reverse Isolation (|S12| 2)
f = 10 to 250 MHz
f = 10 to 250 MHz
dB
MHz
dB
±0.5
500
39
VSWR
Input VSWR
Output VSWR
f = 10 to 250 MHz
f = 10 to 250 MHz
1.6:1
1.5:1
NF 50 Noise Figure
f = 100 MHz
dB 2.0 2.5
P1 dB Output Power at 1 dB Gain Compression
f = 100 MHz
dBm
11
IP3 Third Order Intercept Point
f = 100 MHz
dBm
23
tD Group Delay
f = 100 MHz
psec
200
Vd
dV/dT
Device Voltage
Device Voltage Temperature Coefficient
V 4.0
mV/°C
5.5 7.0
+10
Notes:
1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 10 MHz Gain (GP).
INA-01170 Typical Scattering Parameters (ZO = 50 , TA = 25°C, Id = 35 mA)
Freq.
GHz
S11
Mag
Ang
S21
dB Mag Ang
S12
dB Mag Ang
S22
Mag Ang
0.01 .09 –20 32.8 43.65 –2 –38.4 .012 –5 .17 –1
0.05 .10 –39 32.8 43.51 –9 –38.3 .012 17 .18
0
0.10 .13 –65 32.6 42.82 –18 –38.3 .012 –4 .18
1
0.15 .17 –83 32.4 41.71 –26 –38.4 .012 17 .19
2
0.20 .21 –96 32.1 40.41 –35 –38.6 .012 12 .19
3
0.25 .25 –107 31.8 38.93 –43 –39.0 .011 26 .19
4
0.30 .28 –115 31.5 37.38 –50 –39.0 .011 3 .20
5
0.40 .33 –130 30.7 34.19 –65 –39.3 .011 21 .21
3
0.50 .37 –140 29.9 31.13 –78 –39.2 .011 11 .22
0
0.60 .40 –150 29.0 28.30 –90 –38.9 .011 22 .23 –5
0.80 .43 –164 27.4 23.48 –112 –38.5 .012 30 .24 –19
1.0
.44 –176 25.8 19.45 –132 –36.5 .015 32
.23 –32
1.5
.44 165 21.8 12.37 –179 –33.6 .020 42
.19 –69
2.0
.44 154 17.9 7.88 146 –33.0 .022 42
.13 –106
2.5
.46 148 14.6 5.36 121 –30.6 .029 36
.12 –151
3.0
.48 139 11.4 3.71 96 –30.0 .032 45
.10 159
k
1.17
1.17
1.17
1.18
1.18
1.26
1.26
1.31
1.35
1.43
1.52
1.49
1.75
2.42
2.63
3.31

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3
INA-01170 Typical Performance, TA = 25°C
(unless otherwise noted)
35
Gain Flat to DC
30
3.0 50
TMS = +125°C
40 TMS = +25°C
2.5 TMS = –55°C
30
25 2.0
20
20 1.5
10
35
0.1 GHz
0.5 GHz
30
1.0 GHz
25
20
15
.01 .02
.05 0.1 0.2
1.0
0.5 1.0
FREQUENCY (GHz)
Figure 1. Typical Gain and Noise Figure
vs. Frequency, TA = 25°C, Id = 35 mA.
0
02 4 6
8
Vd (V)
Figure 2. Device Current vs. Voltage.
15
.01
.05
0.2
1.0
Id (mA)
Figure 3. Power Gain vs. Current.
33
32 Gp
31
30 13
P1 dB
11
2.5 9
2.0
1.5 NF
7
1.0
0.5
–55 –25
+25
+85 +125
TEMPERATURE (°C)
Figure 4. Output Power and 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 0.1 GHz, Id = 35 mA.
15
Id = 40 mA
12
Id = 35 mA
9
Id = 30 mA
6
3
0
.02 .05 0.1 0.2 0.5 1.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
3.0
2.5
2.0
Id = 30 to 40 mA
1.5
1.0
.02 .05 0.1 0.2 0.5 1.0
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.

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70 mil Package Dimensions
.040
1.02
4
GROUND
RF INPUT
RF OUTPUT
AND BIAS
.020
.508
13
.004 ± .002
.10 ± .05
2 GROUND
.070
1.78
Notes:
(unless otherwise specified)
1. Dimensions are in
2. Tolerances
mm
in .xxx = ± 0.005
mm .xx = ± 0.13
.495 ± .030
12.57 ± .76
.035
.89
www.hp.com/go/rf
For technical assistance or the location of
your nearest Hewlett-Packard sales
office, distributor or representative call:
Americas/Canada: 1-800-235-0312 or
408-654-8675
Far East/Australasia: Call your local HP
sales office.
Japan: (81 3) 3335-8152
Europe: Call your local HP sales office.
Data subject to change.
Copyright © 1998 Hewlett-Packard Co.
Obsoletes 5965-9562E
Printed in U.S.A. 5966-4967E (5/98)