INA-01100.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 INA-01100 데이타시트 다운로드

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Low Noise, Cascadable
Silicon␣ Bipolar MMIC Amplifier
Technical Data
INA-01100
Features
• Cascadable 50 Gain Block
• Low Noise Figure:
1.7 dB Typical at 100 MHz
• High Gain:
32.5 dB Typical at 100 MHz
• 3 dB Bandwidth:
DC to 500␣ MHz
• Unconditionally Stable
(k>1)
The INA series of MMICs is
fabricated using HP’s 10 GHz fT,
25 GHz fMAX, ISOSAT™-I silicon
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielec-
tric and scratch protection to
achieve excellent performance,
uniformity and reliability.
Chip Outline[1]
RF
OUT
GND
2
Description
The INA-01100 is a low-noise silicon
bipolar Monolithic Microwave
Integrated Circuit (MMIC) feedback
amplifier chip. It is designed for
narrow or wide bandwidth indus-
trial and military applications that
require high gain and low noise IF
or RF amplification.
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold
wire.[1]
GND
1
RF
IN
Note:
1. See Application Note, “A005: Transistor
Chip Use” for additional information.
Typical Biasing Configuration
VCC
RFC (Optional)
RF IN
Cblock
4
3
1
2
Rbias
Cblock
Vd = 5.5 V
(Nominal)
RF OUT
5965-9561E
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INA-01100 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
50 mA
400 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance:
θjc = 60°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TMounting Surface (TMS) = 25°C.
3. Derate at 16.7 mW/°C for TMS >
176°C.
INA-01100 Electrical Specifications[1,3], TA = 25°C
Symbol
Parameters and Test Conditions[2]: Id = 35 mA, ZO = 50
GP Power Gain (|S21| 2)
f = 100 MHz
GP Gain Flatness
f = 10 to 250 MHz
f3 dB
ISO
3 dB Bandwidth
Reverse Isolation (|S12| 2)
f = 10 to 250 MHz
VSWR
Input VSWR
Output VSWR
f = 10 to 250 MHz
f = 10 to 250 MHz
NF 50 Noise Figure
f = 100 MHz
P1 dB Output Power at 1 dB Gain Compression
f = 100 MHz
IP3 Third Order Intercept Point
f = 100 MHz
tD Group Delay
f = 100 MHz
Vd Device Voltage
dV/dT Device Voltage Temperature Coefficient
Units Min.
dB
dB
MHz
dB
dB
dBm
dBm
psec
V
mV/°C
4.0
Typ. Max.
32.5
± 0.5
500
39
1.6:1
1.5:1
1.7
11
23
200
5.5
+10
7.0
Notes:
1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer.
3. The values are the achievable performance for the INA-01100 mounted in a 70 mil stripline package.
INA-01100
Typical
Scattering
Parameters[1]
(Z
O
=
50
,
T
A
=
25°C,
V
CC
=
35
mA)
Freq.
GHz
S11
Mag
Ang
S21
dB Mag Ang
S12
dB Mag Ang
S22
Mag Ang
k
0.01 0.09 –16 32.7 43.4 –1 –38.5 .012 –1 .18
1 1.17
0.05 0.10 –27 32.7 43.1 –10 –38.6 .012 15 .19
5 1.18
0.10 0.11 –5 32.4 41.9 –20 –38.4 .012 –8 .20 10 1.17
0.20 0.14 –80 31.6 38.0 –37 –38.6 .012 4 .24 14 1.22
0.30 0.18 –98 30.5 33.7 –52 –38.8 .011 –10 .27 15 1.31
0.40 0.20 –110 29.4 29.6 –65 –39.6 .011 2 .30 10 1.51
0.50 0.22 –115 28.4 26.2 –75 –38.6 .012 –12 .32
6 1.48
0.60 0.24 –120 27.4 23.4 –84 –39.1 .011 –7 .34
1 1.67
0.80 0.27 –124 25.7 19.3 –100 –38.3 .012 –6 .36 –11 1.76
1.00 0.30 –127 24.3 16.3 –115 –36.1 .016 –5 .36 –22 1.58
1.5
0.44 165 21.8 12.37 –179 –33.6 .020 42
.19 –69 1.75
2.0
0.44 154 17.9 7.88 146 –33.0 .022 42
.13 –106 2.42
2.5
0.46 148 14.6 5.36 121 –30.6 .029 36
.12 –151 2.63
3.0
0.48 139 11.4 3.71 96 –30.0 .032 45
.10 159 3.31
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section of the Communications Components Designer’s Catalog.
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INA-01100 Typical Performance, TA = 25°C
(unless otherwise noted: The values are the achievable performance for the INA-01100 mounted in a 70 mil
stripline package.)
35
Gain Flat to DC
30
3.0 50
TMS = +125°C
40 TMS = +25°C
2.5 TMS = –55°C
35
0.1 GHz
0.5 GHz
30
30
25 2.0
20
1.0 GHz
25
20 1.5
10
20
15
.01 .02
.05 0.1 0.2
1.0
0.5 1.0
FREQUENCY (GHz)
Figure 1. Typical Gain and Noise Figure
vs. Frequency, TA = 25°C, Id = 35 mA
0
02 4 6
8
Vd (V)
Figure 2. Device Current vs. Voltage.
15
.01
.05
0.2
1.0
Id (mA)
Figure 3. Power Gain vs. Current.
33
32 Gp
31
30 13
P1 dB
11
2.5 9
2.0
1.5 NF
7
1.0
0.5
–55 –25
+25
+85 +125
TEMPERATURE (°C)
Figure 4. Output Power and 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature. f = 0.1 GHz, Id = 35 mA.
15
Id = 40 mA
12
Id = 35 mA
9
Id = 30 mA
6
3
0
.02 .05 0.1 0.2 0.5 1.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
INA-01100 Chip Dimensions
3.0
2.5
2.0
Id = 30 to 40 mA
1.5
1.0
.02 .05 0.1 0.2 0.5 1.0
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
GND
2
(4)
RF
OUT
(3)
500 ± 13 µm
19.7 ± 0.5 mil
(2)
GND
(1) 1
RF
IN
375 ± 13 µm
14.8 ± 0.5 mil
Chip thickness is 140 µm/5.5 mil. Bond Pads are
41 µm/1.6 mil typical on each side. Note: Ground
Bonding is Critical. Refer to Application Bulletin,
“AB-0007: INA Bonding Configuration”.
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