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Low Noise, Cascadable
Silicon Bipolar MMIC Amplifier
Technical Data
INA-02170
Features
• Cascadable 50 Gain Block
• Low Noise Figure:
2.0 dB Typical at 0.5 GHz
• High Gain:
31.5 dB Typical at 0.5 GHz
25.0 dB Typical at 1.5 GHz
• 3 dB Bandwidth:
DC to 1.0 GHz
• Unconditionally Stable
(k>1)
• Hermetic Gold-Ceramic
Surface Mount Package
Description
The INA-02170 is a low noise
silicon bipolar Monolithic Micro-
wave Integrated Circuit (MMIC)
feedback amplifier housed in a
hermetic, high reliability package.
It is designed for narrow or wide
bandwidth industrial and military
applications that require high gain
and low noise IF or RF
amplification.
70 mil Package
The INA series of MMICs is
fabricated using HP’s 10 GHz fT,
25 GHz fMAX, ISOSAT™-I silicon
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielec-
tric and scratch protection to
achieve excellent performance,
uniformity and reliability.
Typical Biasing Configuration
VCC > 8 GHz
RFC (Optional)
RF IN
Cblock
4
3
1
2
Rbias
Cblock
Vd = 5.5 V
RF OUT

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2
INA-02170 Absolute Maximum Ratings
Parameter
Device Current
Absolute Maximum[1]
50 mA
Thermal Resistance[2,4]:
θjc = 140°C/W
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
400 mW
+13 dBm
200°C
–65 to 200°C
INA-02170 Electrical Specifications[1], TA = 25°C
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 7.1 mW/°C for TC > 144°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Symbol
Parameters and Test Conditions: Id = 35 mA, ZO = 50
Units Min. Typ. Max.
GP
GP
f3 dB
ISO
Power Gain (|S21| 2)
Gain Flatness
3 dB Bandwidth[2]
Reverse Isolation (|S12| 2)
f = 0.5 GHz
f = 0.01 to 1.0 GHz
f = 0.01 to 1.0 GHz
dB 29.0 31.5 34.0
dB ±1.5
GHz 1.0
dB 39
VSWR
Input VSWR
Output VSWR
f = 0.01 to 1.0 GHz
f = 0.01 to 1.0 GHz
1.4:1
1.5:1
NF 50 Noise Figure
f = 0.5 GHz
dB 2.0 2.5
P1 dB Output Power at 1 dB Gain Compression
f = 0.5 GHz
dBm
11
IP3 Third Order Intercept Point
f = 0.5 GHz
dBm
23
tD Group Delay
f = 0.5 GHz
psec
350
Vd Device Voltage
V 4.0 5.5 7.0
dV/dT Device Voltage Temperature Coefficient
mV/°C
+10
Notes:
1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 10 MHz Gain (GP).
INA-02170
Typical
Scattering
Parameters
(Z
O
=
50
,
T
A
=
25°C,
I
d
=
35
mA)
Freq.
GHz
S11
Mag
Ang
S21
dB Mag Ang
S12
dB Mag Ang
S22
Mag Ang
0.01 .05
–8 32.5 42.32 –2 –39.2 .011 14
.19 –1
0.05 .05 –31 32.5 42.32 –7 –38.9 .011 14 .19 –5
0.10 .06 –85 32.5 42.05 –14 –38.0 .013 10 .19 –10
0.20 .09 –110 32.3 41.06 –27 –38.8 .011 5 .18 –16
0.30 .12 –129 32.0 39.82 –40 –38.8 .011 1 .17 –21
0.40 .15 –140 31.7 38.43 –53 –40.2 .010 19 .16 –25
0.50 .17 –151 31.4 37.08 –65 –40.0 .010 8 .16 –27
0.60 .17 –159 31.0 35.49 –77 –39.6 .011 23 .16 –30
0.80 .18 –174 30.2 32.45 –101 –38.2 .012 23 .16 –40
1.00 .19 179 29.2 28.70 –126 –38.2 .012 17 .16 –53
1.20 .19 173 27.8 24.51 –149 –37.5 .013 27 .15 –71
1.40 .20 166 26.1 20.18 –171 –36.2 .015 35 .14 –102
1.60 .21 162 24.2 16.26 170 –36.3 .015 34 .12 –172
1.80 .22 159 22.3 13.02 153 –34.1 .020 46 .10 144
2.00 .23 155 20.4 10.45 139 –33.0 .022 37 .07 117
2.50 .25 150 16.7 6.82 112 –33.3 .022 32 .05 95
3.00 .29 144 13.1 4.51 87 –31.8 .026 32 .04 78
k
1.26
1.26
1.15
1.29
1.32
1.45
1.48
1.43
1.43
1.55
1.66
1.73
2.07
1.94
2.17
3.19
3.96

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3
INA-02170 Typical Performance, TA = 25°C
(unless otherwise noted)
35
Gain Flat to DC
30
3.5 50
TMS = +125°C
40 TMS = +25°C
3.0 TMS = –55°C
30
25 2.5
20
20 2.0
10
15
.01 .02
.05 0.1 0.2
1.5
0.5 1.0 2.0
FREQUENCY (GHz)
Figure 1. Typical Gain and Noise Figure
vs. Frequency, TA = 25°C, Id = 35 mA.
0
02 4 6
8
Vd (V)
Figure 2. Device Current vs. Voltage.
35
0.1 GHz
0.5 GHz
30
1.0 GHz
1.5 GHz
25
20
15
20
30
40
50
Id (mA)
Figure 3. Power Gain vs. Current.
32
31 Gp
30
29 14
P1 dB
12
3.0 10
2.5
2.0 NF
8
1.0
1.0
–55 –25
+25
+85 +125
TEMPERATURE (°C)
Figure 4. Output Power and 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 0.1 GHz, Id = 35 mA.
15
Id = 40 mA
12
Id = 35 mA
9
Id = 30 mA
6
3
0
.02 .05 0.1 0.2 0.5 1.0 2.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
3.5
3.0
2.5
2.0 Id = 30 to 40 mA
1.5
.02
.05 0.1 0.2
0.5 1.0 2.0
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.

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70 mil Package Dimensions
.040
1.02
4
GROUND
RF INPUT
RF OUTPUT
AND BIAS
.020
.508
13
.004 ± .002
.10 ± .05
2 GROUND
.070
1.78
Notes:
(unless otherwise specified)
1. Dimensions are in
2. Tolerances
mm
in .xxx = ± 0.005
mm .xx = ± 0.13
.495 ± .030
12.57 ± .76
.035
.89
www.hp.com/go/rf
For technical assistance or the location of
your nearest Hewlett-Packard sales
office, distributor or representative call:
Americas/Canada: 1-800-235-0312 or
408-654-8675
Far East/Australasia: Call your local HP
sales office.
Japan: (81 3) 3335-8152
Europe: Call your local HP sales office.
Data subject to change.
Copyright © 1998 Hewlett-Packard Co.
Obsoletes 5965-9674E
Printed in U.S.A. 5966-4957E (5/98)