INA-02184.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 INA-02184 데이타시트 다운로드

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Low Noise, Cascadable
Silicon Bipolar MMIC Amplifier
Technical Data
INA-02184
INA-02186
Features
• Cascadable 50 Gain Block
• Low Noise Figure:
2.0 dB Typical at 0.5 GHz
• High Gain:
31 dB Typical at 0.5 GHz
26 dB Typical at 1.5 GHz
• 3 dB Bandwidth:
DC to 0.8 GHz
• Unconditionally Stable
(k>1)
• Low Cost Plastic Package
Description
The INA-02184 and INA-02186 are
low-noise silicon bipolar Mono-
lithic Microwave Integrated
Circuit (MMIC) feedback amplifi-
ers housed in low cost plastic
packages. They are designed for
narrow or wide bandwidth
commercial applications that
require high gain and low noise IF
or RF amplification.
Package 84
The INA series of MMICs is
fabricated using HP’s 10 GHz fT,
25 GHz fMAX, ISOSAT™-I silicon
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielec-
tric and scratch protection to
achieve excellent performance,
uniformity and reliability.
Package 86
Typical Biasing Configuration
VCC
RFC (Optional)
RF IN
Cblock
4
3
1
2
Rbias
Cblock
Vd = 5.5 V
RF OUT
5965-9675E
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INA-02184, -02186 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
Power Dissipation[2,3,4]
RF Input Power
Junction Temperature
Storage Temperature
50 mA
400 mW
+13 dBm
+150°C
–65 to 150°C
Thermal Resistance[2]:
θjc = 90°C/W — INA-02184
θjc = 100°C/W — INA-02186
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 11.1 mW/°C for TC >
144°C for INA-02184.
4. Derate at 10 mW/°C for TC > 110°C
for INA-02186.
INA-02184, -02186 Electrical Specifications[1], TA = 25°C INA-02184 INA-02186
Symbol Parameters and Test Conditions: Id = 35 mA, ZO = 50 Units Min. Typ. Max. Min. Typ. Max.
GP Power Gain (|S21| 2)
f = 0.5 GHz
dB 29.0 31.0
29.0 31.0
GP
f3 dB
ISO
Gain Flatness
3 dB Bandwidth[2]
Reverse Isolation (|S12| 2)
f = 0.01 to 1.0 GHz
f = 0.01 to 1.0 GHz
dB
GHz
dB
± 2.0
0.8
39
± 2.0
0.8
39
Input VSWR (Max over Freq. Range)
f = 0.01 to 1.0 GHz
1.5
2.0
VSWR
Output VSWR (Max over Freq. Range)
f = 0.01 to 1.0 GHz
1.7
1.7
NF 50 Noise Figure
f = 0.5 GHz
dB 2.0
2.0
P1 dB Output Power at 1 dB Gain Compression f = 0.5 GHz
dBm
11
11
IP3 Third Order Intercept Point
f = 0.5 GHz
dBm
23
23
tD Group Delay
f = 0.5 GHz
psec
330
350
Vd Device Voltage
V 4.0 5.5 7.0 4.0 5.5 7.0
dV/dT Device Voltage Temperature Coefficient
mV/°C
+10
+10
Notes:
1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 10 MHz Gain (GP).
INA-02184, -02186 Part Number Ordering Information
Part Number
No. of Devices
Container
INA-02184-TR1
INA-02184-BLK
1000
100
7" Reel
Antistatic Bag
INA-02186-TR1
INA-02186-BLK
1000
100
7" Reel
Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
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INA-02184, -02186 Typical Performance, TA = 25°C
(unless otherwise noted)
35
Gain Flat to DC
30
3.5 50
TC = +85°C
40 TC = +25°C
3.0 TC = –25°C
30
25 2.5
20
20 2.0
10
35
30
25
20
0.1 GHz
0.5 GHz
1.0 GHz
1.5 GHz
15
.01 .02
.05 0.1 0.2
1.5
0.5 1.0 2.0
FREQUENCY (GHz)
Figure 1. Typical Gain and Noise Figure
vs. Frequency, TA = 25°C, Id = 35 mA.
0
02 4 6
8
Vd (V)
Figure 2. Device Current vs. Voltage.
15
20
30
40
50
Id (mA)
Figure 3. Power Gain vs. Current.
32
Gp
31
30 P1 dB
2.5
NF
2.0
15
Id = 40 mA
12
13 Id = 35 mA
9
11
9 Id = 30 mA
6
3
3.5
3.0
2.5
2.0 Id = 30 to 40 mA
1.5
–55 –25
+25
+85 +125
TEMPERATURE (°C)
Figure 4. Output Power and 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 0.5 GHz, Id = 35 mA.
0
.02 .05 0.1 0.2 0.5 1.0 2.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
1.5
.02
.05 0.1 0.2
0.5 1.0 2.0
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
2.00:1
INA-02184
INA-02186
1.75:1
2.00:1
INA-02184
INA-02186
1.75:1
1.50:1
1.50:1
1.25:1
1.25:1
1.00:1
.02
.05 0.1 0.2
0.5 1.0 2.0
FREQUENCY (GHz)
Figure 7. Input VSWR vs. Frequency,
Id = 35 mA.
1.00:1
.02
.05 0.1 0.2
0.5 1.0 2.0
FREQUENCY (GHz)
Figure 8. Output VSWR vs. Frequency,
Id = 35 mA.
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Typical INA-02184 Scattering Parameters (ZO = 50 , TA = 25°C, Id = 35 mA)
Freq.
GHz
S11
Mag
Ang
S21
dB Mag Ang
S12
dB Mag Ang
S22
Mag Ang
0.01
.09 –176
31.9 39.33 –1 –40.0 .010 1
.25
–1
0.05
.09 –171
31.9 39.24 –6 –41.9 .008 –12
.25
–4
0.10
.10 –163
31.8 39.07 –13 –40.9 .009 1
.25
–8
0.20
.13 –159
31.7 38.30 –26 –40.0 .010 15
.23 –13
0.30
.15 –161
31.4 37.30 –39 –38.4 .012 16
.22 –17
0.40
.18 –168
31.2 36.42 –51 –39.2 .011 32
.21 –15
0.50
.19 –175
31.0 35.40 –63 –40.0 .010 34
.21 –16
0.60 .20 179 30.7 34.20 –75 –37.1 .014 35 .21 –17
0.80 .19 166 29.9 31.21 –101 –38.4 .012 38 .24 –26
1.00 .17 159 28.4 26.36 –126 –36.5 .015 53 .24 –41
1.20 .15 159 26.8 21.89 –149 –34.0 .020 56 .22 –60
1.40 .15 163 24.8 17.36 –169 –33.2 .022 62 .18 –78
1.60 .16 168 22.6 13.59 175 –31.4 .027 67 .14 –93
1.80 .18 168 20.7 10.86 161 –31.1 .028 61 .11 –108
2.00 .19 165 18.8 8.71 149 –30.2 .031 64 .08 –125
2.50 .23 159 14.9 5.56 127 –29.1 .035 56 .05 –167
3.00 .27 150 11.5 3.76 106 –27.1 .044 65 .04 156
3.50 .30 143 8.8 2.74 89 –26.0 .050 57 .04 137
4.00 .33 133 6.6 2.14 73 –25.0 .056 62 .05 137
k
1.40
1.66
1.52
1.44
1.29
1.39
1.52
1.24
1.44
1.40
1.31
1.50
1.50
1.74
1.92
2.54
2.89
3.39
3.78
Typical INA-02186 Scattering Parameters (ZO = 50 , TA = 25°C, Id = 35 mA)
Freq.
GHz
S11
Mag
Ang
S21
dB Mag Ang
S12
dB Mag Ang
S22
Mag Ang
0.01
.09 –178
31.5 37.38 –1 –40.0 .010 1
.24
–1
0.05
.09 –172
31.5 37.55 –6 –37.7 .013 11
.24
–5
0.10
.11 –160
31.5 37.46 –13 –39.2 .011 8
.23
–9
0.20
.14 –153
31.4 37.04 –25 –40.9 .009 15
.22 –17
0.30
.18 –156
31.3 36.62 –37 –38.4 .012 1
.21 –25
0.40
.22 –161
31.2 36.20 –49 –37.7 .013 28
.19 –30
0.50
.25 –169
31.1 35.70 –61 –39.2 .011 42
.18 –35
0.60
.28 –177
30.9 34.94 –74 –38.4 .012 44
.16 –39
0.80 .31 165 30.2 32.34 –101 –36.5 .015 52 .15 –47
1.00 .30 148 28.8 27.64 –129 –34.4 .019 57 .12 –59
1.20 .27 135 27.0 22.26 –153 –32.4 .024 62 .09 –70
1.40 .24 129 24.7 17.22 –173 –31.1 .028 61 .07 –80
1.60 .21 128 22.5 13.27 170 –31.4 .027 62 .04 –82
1.80 .20 129 20.4 10.42 156 –29.1 .035 61 .02 –83
2.00 .20 131 18.4 8.34 144 –29.1 .035 63 .01 –20
2.50 .23 133 14.5 5.29 123 –27.1 .044 59 .02 30
3.00 .27 130 11.2 3.61 103 –25.7 .052 63 .02 27
3.50 .31 124 8.3 2.60 86 –24.4 .060 64 .02 34
4.00 .34 118 6.1 2.02 70 –23.4 .068 58 .01 30
k
1.46
1.22
1.37
1.60
1.30
1.25
1.40
1.33
1.20
1.15
1.15
1.23
1.52
1.50
1.79
2.15
2.56
2.97
3.28
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Emitter Inductance and
Performance
As a direct result of their circuit
topology, the performance of INA
MMICs is extremely sensitive to
groundpath (“emitter”) induc-
tance. The two stage design
creates the possibility of a feed-
back loop being formed through
the ground returns of the stages. If
the path to ground provided by
the external circuit is “long” (high
in impedance) compared to the
path back through the ground
return of the other stage, then
instability can occur (see Fig. 1).
This phenomena can show up as a
“peaking” in the gain versus
frequency response (perhaps
creating a negative gain slope
amplifier), an increase in input
VSWR, or even as return gain (a
reflection coefficient greater than
unity) at the input of the MMIC.
The “bottomline” is that excellent
grounding is critical when
using INA MMICs. The use of
plated through holes or equivalent
minimal path ground returns at
the device is essential. An
appropriate layout is shown in
Figure 2. A corollary is that
designs should be done on the
thinnest practical substrate. The
parasitic inductance of a pair of
via holes passing through 0.032"
thick P.C. board is approximately
0.1 nH, while that of a pair of via
holes passing through 0.062" thick
board is close to 0.5 nH. HP does
not recommend using INA family
MMICs on boards thicker than
32␣ mils.
These stability effects are entirely
predictable. A circuit simulation
using the data sheet S-parameters
and including a description of the
ground return path (via model or
equivalent “emitter” inductance)
will give an accurate picture of the
performance that can be ex-
pected. Device characterizations
are made with the ground leads of
the MMIC directly contacting a
solid copper block (system
ground) at a distance of 2 to 4 mils
from the body of the package.
Thus the information in the data
sheet is a true description of the
performance capability of the
MMIC, and contains minimal
contributions from fixturing.
Figure 1. INA Potential
Ground Loop.
Figure 2. INA Circuit Board 2x
Actual Size.
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