INA-03100.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 INA-03100 데이타시트 다운로드

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Low Noise, Cascadable Silicon
Bipolar MMIC Amplifier
Technical Data
INA-03100
Features
• Cascadable 50 Gain Block
• Low Noise Figure:
2.5 dB Typical at 1.5 GHz
• High Gain:
26.0 dB Typical at 2.8 GHz
• 3 dB Bandwidth:
DC to 2.8 GHz
• Unconditionally Stable
(k>1)
• Low Power Consumption
Description
The INA-03100 is a low-noise
silicon bipolar Monolithic Micro-
wave Integrated Circuit (MMIC)
feedback amplifier chip. It is
designed for narrow or wide
bandwidth commercial, industrial
and military applications that
require high gain and low noise IF
or RF amplification with minimum
power consumption.
The INA series of MMICs is
fabricated using HP’s 10 GHz fT,
25 GHz fMAX, ISOSAT™-I silicon
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielec-
tric and scratch protection to
achieve excellent performance,
uniformity and reliability.
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold
wire.[1]
Chip Outline[1]
C
M
7891 KA
RF
OUT
(3)
GND (2)
2
30AN
(4)
GND
(1) 1
RF
IN
Note:
1. See Application Note, “A005: Transistor
Chip Use” for additional information.
Typical Biasing Configuration
VCC
RFC (Optional)
RF IN
Cblock
4
3
1
2
Rbias
Cblock
Vd = 5.5 V
(Nominal)
RF OUT
5965-9676E
6-102

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INA-03100 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
50 mA
200 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance[2]:
θjc = 70°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TMounting Surface (TMS) = 25°C.
3. Derate at 14.3 mW/°C for TMS >
186°C.
INA-03100 Electrical Specifications[1,3], TA = 25°C
Symbol
Parameters and Test Conditions[2]: Id = 12 mA, ZO = 50
GP Power Gain (|S21| 2)
f = 1.5 GHz
GP Gain Flatness
f = 0.01 to 2.0 GHz
f3 dB
ISO
3 dB Bandwidth
Reverse Isolation (|S12| 2)
f = 0.01 to 2.0 GHz
VSWR
Input VSWR
Output VSWR
f = 0.01 to 2.0 GHz
f = 0.01 to 2.0 GHz
NF 50 Noise Figure
f = 1.5 GHz
P1 dB Output Power at 1 dB Gain Compression
f = 1.5 GHz
IP3 Third Order Intercept Point
f = 1.5 GHz
tD Group Delay
f = 1.5 GHz
Vd Device Voltage
f = 1.5 GHz
dV/dT Device Voltage Temperature Coefficient
Units Min.
dB
dB
GHz
dB
dB
dBm
dBm
psec
V
mV/°C
3.5
Typ. Max.
26.0
± 0.5
2.8
37
2.05
3.05
2.5
1.0
10
200
4.5 5.5
+5
Notes:
1. The recommended operating current range for this device is 8 to 20 mA. Typical performance as a function of current is
on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer.
3. The values are the achievable performance for the INA-03100 mounted in a 70 mil stripline package.
INA-03100
Typical
Scattering
Parameters[1]
(Z
O
=
50
,
T
A
=
25°C,
I
d
=
12
mA)
Freq.
GHz
S11
Mag
Ang
S21
dB Mag Ang
S12
dB Mag Ang
S22
Mag Ang
k
0.05 0.35 176 26.6 21.4 –4 –36.0 .016 8 .56 –1 1.25
0.10 0.35 172 26.6 21.3 –8 –36.5 .015 –4 .56 –3 1.30
0.20 0.33 165 26.4 21.0 –15 –36.4 .015 –5 .56 –4 1.30
0.40 0.31 150 26.1 20.1 –29 –36.0 .016 –13 .54 –7 1.33
0.60 0.27 137 25.6 19.0 –42 –37.6 .013 –14 .54 –8 1.58
0.80 0.23 125 25.0 17.8 –53 –36.1 .016 –13 .53 –9 1.49
1.00 0.19 113 24.5 16.7 –63 –35.1 .018 –16 .53 –10 1.43
1.20 0.16 99 24.0 15.9 –72 –36.9 .014 –21 .54 –12 1.72
1.40 0.13 76 23.8 15.4 –81 –36.4 .015 –12 .55 –15 1.65
1.60 0.12 51 23.6 15.2 –88 –35.6 .017 –11 .56 –17 1.54
1.80 0.13 21 23.6 15.5 –97 –34.1 .020 –5 .58 –20 1.24
2.00 0.18 –5 23.8 15.5 –106 –34.3 .019 –13 .60 –25 1.18
2.50 0.40 –52 24.7 17.2 –132 –30.2 .031 –9 .67 –38 0.53
3.00 0.81 –86 25.6 19.1 –167 –27.0 .045 –12 .70 –64 0.03
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section of the Avantek Microwave Semiconductors databook.
6-103

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INA-03100 Typical Performance, TA = 25°C
(unless otherwise noted: The values are the achievable performance for the INA-03100 mounted in a 70 mil
stripline package.)
30
Gain Flat to DC
25
20
5.0 25
TMS = +125°C
20 TMS = +25°C
4.0 TMS = –55°C
15
3.0
30
f = 0.1 – 2 GHz
25
f = 3 GHz
20
10 f = 4 GHz
15 2.0
5
15
10
0.1
0.2
0.5 1.0 2.0
1.0
5.0
FREQUENCY (GHz)
Figure 1. Typical Gain and Noise Figure
vs. Frequency, TA = 25°C, Id = 12 mA.
0
0 2 4 6 8 10
Vd (V)
Figure 2. Device Current vs. Voltage.
10
5 10 15 20 25
Id (mA)
Figure 3. Power Gain vs. Current.
27
26
Gp
25
24
P1 dB
4
2
3.5 0
2.0
2.5 NF
–2
1.0
1.5
–55 –25
+25
+85 +125
TEMPERATURE (°C)
Figure 4. Output Power and 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 1.5 GHz, Id = 12 mA.
8
4 Id = 20 mA
Id = 12 mA
0
Id = 8 mA
–4
–8
0.1
0.2
0.5 1.0 2.0
5.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
5.0
4.0
3.0 Id = 8 mA
2.0
Id = 12 to 20 mA
1.0
0.1
0.2
0.5 1.0 2.0
5.0
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
INA-03100 Chip Dimensions
C
M
7891 KA
RF
OUT
(3)
GND (2)
2
500 ± 13 µm
19.7 ± 0.5 mil
30AN
(4)
GND
(1) 1
RF
IN
375 ± 13 µm
14.8 ± 0.5 mil
Chip thickness is 140 µm/5.5 mil. Bond Pads are
41 µm/1.6 mil typical on each side. Note: Ground
Bonding is Critical. Refer to Application Bulletin,
“AB-0007: INA Bonding Configuration”.
6-104