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Low Noise, Cascadable
Silicon Bipolar MMIC Amplifier
Technical Data
INA-03170
Features
• Cascadable 50 Gain Block
• Low Noise Figure:
2.5 dB Typical at 1.5 GHz
• High Gain:
26.0 dB Typical at 1.5 GHz
• 3 dB Bandwidth:
DC to 2.8 GHz
• Unconditionally Stable
(k>1)
• Low Power Dissipation
• Hermetic Gold-Ceramic
Surface Mount Package
Description
The INA-03170 is a low-noise
silicon bipolar Monolithic Micro-
wave Integrated Circuit (MMIC)
feedback amplifier housed in a
hermetic, high reliability package.
It is designed for narrow or wide
bandwidth commercial, industrial
and military applications that
require high gain and low noise IF
or RF amplification with minimum
power consumption.
70 mil Package
The INA series of MMICs is
fabricated using HP’s 10 GHz fT,
25 GHz fMAX, ISOSAT™-I silicon
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielec-
tric and scratch protection to
achieve excellent performance,
uniformity and reliability.
Typical Biasing Configuration
RF IN
Cblock
4
3
1
2
VCC > 7 V
RFC (Optional)
Rbias (Required)
Cblock
Vd = 4.5 V
RF OUT

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2
INA-03170 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
25 mA
Thermal Resistance[2,4]:
θjc = 150°C/W
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
200 mW
+13 dBm
200°C
–65 to 200°C
INA-03170 Electrical Specifications[1], TA = 25°C
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 6.7 mW/°C for TC > 170°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Symbol
Parameters and Test Conditions: Id = 12 mA, ZO = 50
GP Power Gain (|S21| 2)
f = 1.5 GHz
Units Min. Typ. Max.
dB 24.5 28.0 30.0
GP
f3 dB
ISO
VSWR
Gain Flatness
3 dB Bandwidth[2]
Reverse Isolation (|S12| 2)
Input VSWR
Output VSWR
f = 0.01 to 2.0 GHz
f = 0.01 to 2.0 GHz
f = 0.01 to 2.0 GHz
f = 0.01 to 2.0 GHz
dB
GHz
dB
±0.5
2.8
37
2.0[3]
3.0[3]
NF 50 Noise Figure
f = 1.5 GHz
dB 2.5 3.0
P1 dB Output Power at 1 dB Gain Compression
f = 1.5 GHz
dBm
1.0
IP3 Third Order Intercept Point
f = 1.5 GHz
dBm
10
tD Group Delay
f = 1.5 GHz
psec
200
Vd
dV/dT
Device Voltage
Device Voltage Temperature Coefficient
f = 1.5 GHz
V 4.0
mV/°C
5.3 6.0
+5
Notes:
1. The recommended operating current range for this device is 8 to 20 mA. Typical performance as a function of current is
on the following page.
2. Referenced from 10 MHz Gain (GP).
3. VSWR can be improved by bypassing the bias directly to ground.
INA-03170
Typical
Scattering
Parameters
(Z
O
=
50
,
T
A
=
25°C,
I
d
=
12
mA)
Freq.
GHz
S11
Mag
Ang
S21
dB Mag Ang
S12
dB Mag Ang
S22
Mag Ang
0.05 .35 178 26.6 21.48 –4 –35.9 .016 9 .56 –1
0.10 .35 176 26.6 21.42 –7 –36.5 .015 6 .56 –4
0.20 .34 172 26.6 21.37 –14 –36.5 .015 –1 .56 –7
0.40 .34 164 26.5 21.19 –28 –36.5 .015 –5 .54 –13
0.60 .33 158 26.4 20.91 –41 –38.4 .012 2 .53 –18
0.80 .32 152 26.3 20.69 –54 –37.1 .014 5 .51 –22
1.00 .32 147 26.2 20.48 –67 –36.5 .015 4 .50 –27
1.20 .32 141 26.2 20.40 –80 –39.2 .011 13 .49 –32
1.40 .31 133 26.3 20.73 –93 –37.7 .013 25 .48 –38
1.60 .31 125 26.5 21.15 –106 –37.1 .014 28 .47 –45
1.80 .30 117 26.8 21.84 –121 –35.4 .017 30 .46 –52
2.00 .27 106 26.9 22.20 –138 –37.1 .014 33 .42 –62
2.50 .15
94 26.6 21.48 –177 –35.4 .017 23
.31 –79
3.00 .16 159 23.7 15.32 133 –34.4 .019 42 .16 –72
3.50 .28 150 19.8 9.81 99 –35.4 .017 28 .19 –60
k
1.24
1.29
1.30
1.33
1.58
1.46
1.41
1.79
1.57
1.47
1.28
1.48
1.44
1.78
2.71

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3
INA-03170 Typical Performance, TA = 25°C
(unless otherwise noted)
30
Gain Flat to DC
25
5.0 25
TMS = +125°C
20 TMS = +25°C
4.0 TMS = –55°C
15
20 3.0
10
15 2.0
5
30
f = 0.1 – 2 GHz
25
f = 3 GHz
20
f = 4 GHz
15
10
0.1
0.2
0.5 1.0 2.0
1.0
5.0
FREQUENCY (GHz)
Figure 1. Typical Gain and Noise Figure
vs. Frequency, TA = 25°C, Id = 12 mA.
0
0 2 4 6 8 10
Vd (V)
Figure 2. Device Current vs. Voltage.
10
5 10 15 20 25
Id (mA)
Figure 3. Power Gain vs. Current.
27
26
Gp
25
24
P1 dB
4
2
3.5 0
2.0
NF
2.5
–2
1.0
1.5
–55 –25
+25
+85 +125
TEMPERATURE (°C)
Figure 4. Output Power and 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.5 GHz, Id = 12 mA.
8
4 Id = 20 mA
Id = 12 mA
0
Id = 8 mA
–4
–8
0.1
0.2
0.5 1.0 2.0
5.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
5.0
4.0
3.0 Id = 8 mA
2.0
Id = 12 to 20 mA
1.0
0.1
0.2
0.5 1.0 2.0
5.0
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.

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70 mil Package Dimensions
.040
1.02
4
GROUND
RF INPUT
RF OUTPUT
AND BIAS
.020
.508
13
.004 ± .002
.10 ± .05
2 GROUND
.070
1.78
Notes:
(unless otherwise specified)
1. Dimensions are in
2. Tolerances
mm
in .xxx = ± 0.005
mm .xx = ± 0.13
.495 ± .030
12.57 ± .76
.035
.89
www.hp.com/go/rf
For technical assistance or the location of
your nearest Hewlett-Packard sales
office, distributor or representative call:
Americas/Canada: 1-800-235-0312 or
408-654-8675
Far East/Australasia: Call your local HP
sales office.
Japan: (81 3) 3335-8152
Europe: Call your local HP sales office.
Data subject to change.
Copyright © 1998 Hewlett-Packard Co.
Obsoletes 5965-9677E
Printed in U.S.A. 5966-4956E (5/98)