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Low Noise, Cascadable
Silicon Bipolar MMIC Amplifier
Technical Data
INA-03184
Features
• Cascadable 50 Gain Block
• Low Noise Figure:
2.6 dB Typical at 1.5 GHz
• High Gain:
25 dB Typical at 1.5 GHz
• 3 dB Bandwidth:
DC to 2.5 GHz
• Unconditionally Stable
(k>1)
• Low Power Dissipation:
10 mA Bias
• Low Cost Plastic Package
Description
The INA-03184 is a low-noise
silicon bipolar Monolithic Micro-
wave Integrated Circuit (MMIC)
feedback amplifier housed in a
low cost surface mount plastic
package. It is designed for narrow
or wide bandwidth commercial
and industrial applications that
require high gain and low noise IF
or RF amplification with minimum
power consumption.
84 Plastic Package
The INA series of MMICs is
fabricated using HP’s 10 GHz fT,
25 GHz fMAX, ISOSAT™-I silicon
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielec-
tric and scratch protection to
achieve excellent performance,
uniformity and reliability.
Typical Biasing Configuration
C bypass1 (Optional)
VCC
RFC (Optional)
RF IN
Cblock
4
3
1
2
Rbias
Cblock
Vd = 4.0 V
(Nominal)
RF OUT
Note:
1. VSWR can be improved by bypassing
a 100–120 bias resistor directly to
ground. See AN-S012: Low Noise
Amplifiers.

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2
INA-03184 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
Power Dissipation[2]
RF Input Power
Junction Temperature
Storage Temperature
25 mA
200 mW
+13 dBm
150°C
–65 to 150°C
Thermal Resistance:
θjc = 100°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. Derate at 10 mW/°C for TC > 130°C.
INA-03184 Electrical Specifications[1], TA = 25°C
Symbol
GP
GP
f3 dB
ISO
Parameters and Test Conditions: Id = 10 mA, ZO = 50
Power Gain (|S21| 2)
f = 1.5 GHz
Gain Flatness
f = 0.1 to 2.0 GHz
3 dB Bandwidth[2]
Reverse Isolation (|S12| 2)
f = 1.5 GHz
VSWR
Input VSWR
Output VSWR
f = 0.01 to 2.0 GHz
f = 0.01 to 2.0 GHz
NF 50 Noise Figure
f = 1.5 GHz
P1 dB Output Power at 1 dB Gain Compression
f = 1.5 GHz
IP3 Third Order Intercept Point
f = 1.5 GHz
tD Group Delay
f = 1.5 GHz
Vd Device Voltage
dV/dT Device Voltage Temperature Coefficient
Units Min. Typ. Max.
dB 23.0 25.0
dB ±0.8
GHz 2.5
dB 35
2.0:1
3.0:1[3]
dB 2.6
dBm
–2.0
dBm
7
psec
210
V 3.0 4.0 5.0
mV/°C
+4
Notes:
1. The recommended operating current range for this device is 8 to 18 mA. Typical performance as a function of current is
on the following page.
2. Referenced from 10 MHz Gain (GP).
3. VSWR can be improved by bypassing a 100–200 bias resistor directly to ground. See AN-S012: MagIC Low Noise
Amplifiers.
INA-03184 Part Number Ordering Information
Part Number
No. of Devices
Container
INA-03184-TR1
1000
7" Reel
INA-03184-BLK
100 Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.

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3
INA-03184 Typical Scattering Parameters (ZO = 50 , TA = 25°C, Id = 10 mA)
Freq.
GHz
S11
Mag
Ang
S21
dB Mag Ang
S12
dB Mag Ang
S22
Mag Ang
k
0.05 .32 179 25.6 19.14 –3 –37.1 .014 3 .55
0 1.48
0.10 .32 176 25.6 19.05 –7 –37.1 .014 4 .57 –3 1.45
0.20 .32 172 25.6 19.05 –14 –37.1 .014 6 .55 –5 1.48
0.40 .32 165 25.5 18.78 –29 –37.1 .014 10 .53 –11 1.53
0.60 .32 158 25.4 18.71 –43 –36.5 .015 11 .51 –14 1.49
0.80 .32 151 25.4 18.53 –57 –36.5 .015 13 .51 –17 1.50
1.00 .32 144 25.2 18.18 –72 –35.9 .016 21 .50 –20 1.46
1.20 .30 135 25.2 18.27 –86 –35.9 .016 25 .50 –23 1.46
1.40 .31 126 25.2 18.10 –102 –35.4 .017 30 .49 –29 1.42
1.60 .30 117 25.1 17.92 –117 –34.9 .018 38 .48 –34 1.38
1.80 .26 102 24.9 17.49 –135 –34.4 .019 44 .45 –41 1.39
2.00 .22 92 24.4 16.62 –153 –34.0 .020 49 .40 –50 1.44
2.50 .09 91 22.2 12.88 168 –33.6 .021 57 .26 –48 1.87
3.00 .14 160 18.9 8.79 134 –32.8 .023 65 .22 –33 2.40
3.50 .24 151 15.4 5.92 108 –32.0 .025 69 .26 –33 3.01
4.00 .29 139 12.4 4.18 87 –30.8 .029 81 .28 –43 3.52
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section.
INA-03184
Typical
Performance,
T
A
=
25°C
(unless otherwise noted)
30
Gain Flat to DC
25
5.0 25
TC = +85°C
20 TC = +25°C
4.0 TC = –25°C
15
20 3.0
10
30
f = 0.1–2 GHz
25
20
f = 3 GHz
15 2.0
5
15
10
0.1
0.2
0.5 1.0 2.0
1.0
5.0
FREQUENCY (GHz)
Figure 1. Typical Gain and Noise Figure
vs. Frequency, TA = 25°C, Id = 10 mA.
0
0 2 4 6 8 10
Vd (V)
Figure 2. Device Current vs. Voltage.
27
26
25
24
P1 dB
3.0
NF
2.0
Gp
0
–2
–4
–6
–25 +25
+85
TEMPERATURE (°C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.5 GHz, Id = 10 mA.
8
4
Id = 16 mA
0
Id = 10 mA
–4 Id = 8 mA
–8
0.1
0.2
0.5 1.0 2.0
5.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
10
5 10 15 20 25
Id (mA)
Figure 3. Power Gain vs. Current.
5.0
4.0
3.0 Id = 8 mA
2.0
Id = 10 to 16 mA
1.0
0.1
0.2
0.5 1.0 2.0
5.0
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.

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84 Plastic Package Dimensions
0.51 (0.020)
4
white ink dot
RF INPUT
GROUND
RF OUTPUT
AND DC BIAS
13
2 GROUND
2.15
(0.085)
1.52 ± 0.25
(0.060 ± 0.010)
0.51
(0.020)
5° 0.20 ± 0.050
(0.008 ± 0.002)
5.46 ± 0.25
(0.215 ± 0.010)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
www.hp.com/go/rf
For technical assistance or the location of
your nearest Hewlett-Packard sales office,
distributor or representative call:
Americas/Canada: 1-800-235-0312 or
408-654-8675
Far East/Australasia: Call your local HP
sales office.
Japan: (81 3) 3335-8152
Europe: Call your local HP sales office.
Data subject to change.
Copyright © 1998 Hewlett-Packard Co.
Obsoletes 5966-4287E
Printed in U.S.A. 5967-6160E (6/98)