INA-12063.pdf 데이터시트 (총 24 페이지) - 파일 다운로드 INA-12063 데이타시트 다운로드

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1.5 GHz Low Noise Self-Biased
Transistor Amplifier
Technical Data
INA-12063
Features
• Integrated, Active Bias
Circuit
• Single Positive Supply
Voltage (1.5 – 5V)
• Current Adjustable, 1 to
10mA
• 2 dB Noise Figure at
900␣ MHz
• 16 dB Gain at 900 MHz
25 dB Gain at 100 MHz
Applications
• Amplifier Applications for
Cellular, Cordless, Special
Mobile Radio, PCS, ISM,
and Wireless LAN
Applications
Equivalent Circuit
(Simplified)
Vd
GND 2
ACTIVE
BIAS
CIRCUIT
RF
INPUT
RF
FEEDBACK
NETWORK
GND 1
Ibias
RF
OUTPUT
and Vc
Surface Mount Package
SOT-363 (SC-70)
Description
Hewlett-Packard’s INA-12063 is a
Silicon monolithic self-biased
transistor amplifier that offers
excellent gain and noise figure for
applications to 1.5 GHz. Packaged
in an ultra-miniature SOT-363
package, it requires half the board
space of a SOT-143 package.
Pin Connections and
Package Marking
Ibias 1
GND 2 2
RF INPUT 3
6
RF OUTPUT
and VC
5 GND 1
4 Vd
Note:
Package marking provides orientation
and identification.
The INA-12063 is a unique RFIC
that combines the performance
flexibility of a discrete transistor
with the simplicity of using an
integrated circuit. Using a pat-
ented bias circuit, the perfor-
mance and operating current of
the INA-12063 can be adjusted
over the 1 to 10␣ mA range.
The INA-12063 is fabricated using
HP’s 30 GHz fMAX ISOSAT™
Silicon bipolar process which
uses nitride self-alignment
submicrometer lithography,
trench isolation, ion implantation,
gold metalization, and polyimide
intermetal dielectric and scratch
protection to achieve superior
performance, uniformity, and
reliability.
5965-5365E
6-116

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INA-12063 Absolute Maximum Ratings
Symbol
Vd
Vc
Ic
Pin
Tj
TSTG
Parameter
Supply Voltage, to Ground
Collector Voltage
Collector Current
CW RF Input Power
Junction Temperature
Storage Temperature
Units
V
V
mA
dBm
°C
°C
Absolute
Maximum[1]
7
7
15
13
150
-65 to 150
Thermal Resistance[2]:
θj-c= 170°C/W
Notes:
1. Operation of this device above any
one of these limits may cause
permanent damage.
2. TC = 25°C (TC is defined to be the
temperature at the package pins
where contact is made to the
circuit board).
Electrical Specifications, TC = 25°C, Vd = 3 V, unless noted
Symbol
Parameters and Test Conditions
Units Min. Typ. Max. Std.Dev.[3]
GP Power Gain (|S21| 2)
f = 900 MHz[1] dB 14.5 16
f = 250 MHz[2]
19
0.36
NF Noise Figure
f = 900 MHz[1] dB
f = 250 MHz[2]
2.0 2.6
5.0
0.2
P1dB Output Power at 1 dB Gain Compression f = 900 MHz[1] dBm
f = 250 MHz[2]
0
-7
IP3 Third Order Intercept Point
f = 900 MHz[1] dBm
f = 250 MHz[2]
15
2
Idd Device Current[4]
900 MHz LNA[1] mA
250 MHz IF Amp[2]
57
1.5
0.6
Notes:
1. See Test Circuit in Figure 32.
2. See Test Circuit in Figure 33.
3. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during
the initial characterization of this product, and is intended to be used as an estimate for distribution of the typical
specification.
4. Idd is the total current into Pins 1, 4, and 6 of the device, i.e. Idd = Ic + Ibias + Id.
6-117

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INA-12063 Typical Performance, 900 MHz LNA (900 MHz Test Circuit, see Figure 32)
TC = 25°C, ZO = 50 , Vd = 3 V, IC = 5 mA, unless noted
20 0
0
15
-5
10
-5
5 -10
-10
0
-5
-10
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
FREQUENCY (GHz)
Figure 1. Gain vs. Frequency.
-15
-20
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
FREQUENCY (GHz)
Figure 2. Input Return Loss vs.
Frequency.
-15
-20
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
FREQUENCY (GHz)
Figure 3. Output Return Loss vs.
Frequency.
17.2
TA = +85°C
16.8 TA = +25°C
TA = –40°C
16.4
16.0
15.6
15.2
14.8
1
2 34
Vd (V)
5
Figure 4. Gain at 900 MHz vs. Voltage
and Temperature.
2.7
2.45
+85°C
2.2 +25°C
1.95
– 40°C
1.7
1 2 34 5
Vd (V)
Figure 5. Noise Figure at 900 MHz vs.
Voltage and Temperature.
4
TA = +85°C
3 TA = +25°C
TA = –40°C
2
1
0
-1
-2
1 2 34 5
Vd (V)
Figure 6. Output P1dB at 900 MHz vs.
Voltage and Temperature.
10
TA = +85°C
TA = +25°C
8 TA = –40°C
6
4
2
0
012 345
Vd (V)
Figure 7. Supply Current vs. Voltage
and Temperature.
9
6
3
0
-3
-6
2 4 6 8 10
DEVICE CURRENT (mA)
Figure 8. Output P1 dB at 900MHz vs.
Device Current for Vd = 3 V.
6-118

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INA-12063 Typical Scattering Parameters[1], IC = 1.5 mA
TC = 25°C, ZO = 50 , Vd = 3.0 V
Freq.
GHz
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
S11
Mag. Ang.
0.93 -8
0.92 -16
0.90 -24
0.89 -32
0.83 -38
0.79 -45
0.75 -52
0.72 -58
0.69 -64
0.65 -69
0.61 -74
0.59 -80
0.55 -84
0.52 -89
0.49 -94
0.47 -98
0.44 -103
0.42 -107
0.40 -112
0.38 -116
0.36 -120
0.34 -124
0.31 -129
0.31 -133
0.29 -137
0.28 -144
0.27 -149
0.25 -154
0.23 -156
0.24 -162
S21
dB Mag. Ang.
12.6 4.26 172
12.5 4.20 164
12.3 4.11 157
12.0 4.00 149
11.7 3.83 141
11.3 3.69 135
10.9 3.49 128
10.4 3.32 122
10.1 3.18 116
9.6 3.03 111
9.2 2.89 106
8.7 2.72 102
8.4 2.64 97
8.1 2.54 92
7.7 2.43 88
7.3 2.33 84
7.0 2.23 80
6.6 2.15 77
6.4 2.08 73
6.0 1.99 69
5.7 1.93 66
5.3 1.83 63
5.2 1.82 59
4.7 1.72 57
4.6 1.70 54
4.3 1.65 50
4.1 1.60 47
3.7 1.54 44
3.5 1.50 41
3.5 1.49 39
dB
-42.2
-36.2
-32.8
-30.5
-29.1
-27.9
-26.8
-26.1
-25.5
-24.9
-24.5
-24.2
-23.9
-23.6
-23.3
-23.2
-22.9
-22.9
-22.5
-22.3
-22.1
-22.0
-21.9
-22.0
-21.7
-21.4
-21.0
-20.7
-20.9
-21.0
S12
Mag.
0.01
0.02
0.02
0.03
0.04
0.04
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
Note:
1. Reference plane per Figure 31 in Applications Information section.
Ang.
86
79
73
69
64
60
56
53
50
47
45
43
41
40
38
36
35
35
34
33
32
29
30
29
31
30
29
27
24
28
S22
Mag. Ang.
0.99 -3
0.99 -7
0.98 -10
0.96 -13
0.94 -16
0.93 -19
0.91 -21
0.89 -23
0.87 -26
0.86 -28
0.84 -30
0.83 -32
0.82 -34
0.81 -35
0.80 -37
0.79 -39
0.78 -40
0.77 -42
0.77 -44
0.76 -45
0.75 -47
0.74 -49
0.74 -51
0.73 -52
0.73 -54
0.73 -56
0.72 -58
0.71 -60
0.70 -61
0.71 -63
Typical Noise Parameters @ 900 MHz, IC = 1.5 mA
Fmin (dB)
Γopt Mag.
Γopt Ang.
RN ()
1.4 0.6 36 23
6-119
30
25
20
15
10
5
0
0.1
MSG
MAG
|S21|2
0.9 1.7 2.5
FREQUENCY (GHz)

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INA-12063 Typical Scattering Parameters[1], IC = 2.5 mA
TC = 25°C, ZO = 50 , Vd = 3.0 V
Freq.
GHz
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
S11
Mag. Ang.
0.90 -10
0.88 -18
0.85 -27
0.82 -35
0.76 -42
0.71 -49
0.67 -56
0.62 -62
0.59 -67
0.54 -72
0.51 -76
0.49 -81
0.45 -84
0.42 -89
0.39 -93
0.37 -96
0.35 -100
0.33 -104
0.31 -108
0.29 -112
0.27 -115
0.25 -119
0.24 -122
0.23 -126
0.22 -131
0.20 -136
0.19 -142
0.18 -145
0.16 -146
0.17 -153
S21
dB Mag. Ang.
16.0 6.33 171
15.8 6.19 161
15.5 5.98 153
15.2 5.74 144
14.6 5.37 135
14.1 5.07 128
13.5 4.73 122
12.9 4.43 116
12.4 4.18 110
11.9 3.93 104
11.4 3.71 100
10.8 3.47 95
10.4 3.31 91
10.0 3.15 87
9.5 2.98 83
9.1 2.84 79
8.7 2.72 76
8.3 2.60 72
8.0 2.51 69
7.6 2.40 66
7.3 2.31 62
6.8 2.20 59
6.6 2.15 56
6.2 2.05 54
6.1 2.01 51
5.8 1.95 48
5.5 1.89 45
5.2 1.81 42
4.9 1.75 39
4.8 1.75 37
dB
-42.2
-36.2
-33.2
-31.1
-29.6
-28.4
-27.5
-26.6
-26.1
-25.6
-25.1
-24.8
-24.5
-24.1
-23.6
-23.5
-23.3
-23.0
-22.5
-22.2
-22.0
-21.8
-21.6
-21.7
-21.2
-20.7
-20.4
-20.0
-20.2
-20.1
S12
Mag.
0.01
0.02
0.02
0.03
0.03
0.04
0.04
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
0.09
0.09
0.10
0.10
0.10
0.10
Note:
1. Reference plane per Figure 31 in Applications Information section.
Ang.
87
79
73
68
62
59
55
53
51
49
48
46
44
44
42
41
40
41
40
40
38
36
36
36
38
36
35
32
29
32
S22
Mag. Ang.
0.99 -4
0.98 -8
0.96 -11
0.94 -15
0.91 -18
0.90 -20
0.87 -23
0.85 -25
0.83 -27
0.82 -29
0.80 -30
0.79 -32
0.77 -34
0.76 -35
0.76 -37
0.74 -39
0.73 -40
0.73 -42
0.72 -43
0.72 -45
0.72 -47
0.71 -49
0.70 -50
0.69 -52
0.69 -53
0.69 -55
0.68 -57
0.68 -60
0.66 -60
0.68 -62
Typical Noise Parameters @ 900 MHz, IC = 2.5 mA
Fmin (dB)
Γopt Mag.
Γopt Ang.
RN ()
1.5 0.54 36 20
6-120
30
25
20
15
10
5
0
0.1
MSG
MAG
|S21|2
0.9 1.7
2.5
FREQUENCY (GHz)