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S2A - S2V
Taiwan Semiconductor
2A, 50V - 1400V Surface Mount Rectifier
FEATURES
Glass passivated junction chip
Ideal for automated placement
Low forward voltage drop
High surge current capability
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
KEY PARAMETERS
PARAMETER
IF(AV)
VRRM
IFSM
TJ MAX
Package
VALUE
2
UNIT
A
50 - 1400
V
50 A
150 °C
DO-214AA (SMB)
Configuration
Single Die
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94V-0 flammability rating
Packing code with suffix "G" means green compound
(halogen-free)
Part no. with suffix Hmeans AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.09 g (approximately)
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL S2A S2B S2D S2G S2J S2K
Marking code on the device
S2A S2B S2D S2G S2J S2K
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3
ms single half sine-wave
superimposed on rated load per
diode
VRRM
VR(RMS)
VDC
IF(AV)
IFSM
50 100 200 400 600 800
30 70 140 280 420 560
50 100 200 400 600 800
2
50
Junction temperature
TJ
- 55 to +150
Storage temperature
TSTG
- 55 to +150
S2M
S2M
1000
700
1000
S2Q
S2Q
1200
840
1200
S2V
S2V
1400
980
1400
UNIT
V
V
V
A
A
°C
°C
1 Version:L1701

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S2A - S2V
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction to Lead Thermal Resistance
Junction to Ambient Thermal Resistance
SYMBOL
RӨJL
RӨJA
LIMIT
16
53
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS SYMBOL
Forward voltage per diode (1)
IF = 2A,TJ = 25°C
VF
Reverse current @ rated VR per diode (2)
Junction capacitance
Reverse recovery time
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
TJ = 25°C
TJ = 125°C
1 MHz, VR=4.0V
IF=0.5A ,IR=1.0A
IRR=0.25A
IR
CJ
trr
TYP
-
-
-
30
1.5
MAX
1.15
1
125
-
UNIT
V
µA
µA
pF
- µs
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
PACKING PACKING CODE
CODE
SUFFIX(*)
S2x
(Note 1)
H
R5
R4
M4
G
Notes:
1. "x" defines voltage from 50V (S2A) to 1400V (S2V)
*: Optional available
PACKAGE
PACKING
SMB
SMB
SMB
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
EXAMPLE P/N
EXAMPLE P/N PART NO.
S2JHR5G
S2J
PART NO.
SUFFIX
H
PACKING
CODE
R5
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
2 Version:L1701

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S2A - S2V
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig1. Forward Current Derating Curve
Fig2. Typical Junction Capacitance
2.5 100
2
1.5
10
1
0.5
0
0
Resistive or
inductive load
20 40
60
80 100 120 140 160
LEAD TEMPERATURE (°C)
f=1.0MHz
Vsig=50mVp-p
1
0.1 1 10
REVERSE VOLTAGE (V)
100
Fig3. Typical Reverse Characteristics
Fig4. Typical Forward Characteristics
100
TJ=125°C
10
1
TJ=75°C
0.1
0.01
TJ=25°C
0.001
0 20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
10 10
UF1DLW
1
1 0.1
TJ=125°C
TJ=125°C
TJ=25°C
0.01
TJ=25°C
0.001
0.1 0.3 0.4
0.4 0.6
PulsePwulisdethw=i3d0th0μs
1% duty cycle
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
0.8 1 1.2 1.4 1.6 1.8
FORWARD VOLTAGE (V)
3 Version:L1701

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Fig5. Maximum Non-repetitive Forward Surge Current
100
8.3ms single half sine wave
10
S2A - S2V
Taiwan Semiconductor
1
1
10
NUMBER OF CYCLES AT 60 Hz
100
Fig6. Reverse Recovery Time Characteristic And Test Circuit Diagram
4 Version:L1701

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PACKAGE OUTLINE DIMENSIONS
DO-214AA (SMB)
S2A - S2V
Taiwan Semiconductor
DIM.
A
B
C
D
E
F
G
H
Unit (mm)
Min Max
1.95 2.20
4.05 4.60
3.30 3.95
1.95 2.65
0.75 1.60
5.10 5.60
0.05 0.20
0.15 0.31
Unit (inch)
Min Max
0.077 0.087
0.159 0.181
0.130 0.156
0.077 0.104
0.030 0.063
0.201 0.220
0.002 0.008
0.006 0.012
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
Symbol
A
B
C
D
E
Unit (mm)
2.3
2.5
4.3
1.8
6.8
Unit (inch)
0.091
0.098
0.169
0.071
0.268
P/N = Marking Code
G = Green Compound
YW = Date Code
F = Factory Code
5 Version:L1701