BSO211P.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 BSO211P 데이타시트 다운로드

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Preliminary data
BSO211P
OptiMOS-P Small-Signal-Transistor
Feature
Dual P-Channel
Enhancement mode
Super Logic Level (2.5 V rated)
150°C operating temperature
Avalanche rated
dv/dt rated
Product Summary
VDS -20 V
RDS(on) 67 m
ID -4.7 A
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View SIS00070
Type
BSO211P
Package
SO 8
Ordering Code
Q67042-S4064
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA=25°C
TA=70°C
ID
Pulsed drain current
TA=25°C
Avalanche energy, single pulse
ID=-4.7 A , VDD=-10V, RGS=25
Reverse diode dv/dt
ID puls
EAS
dv/dt
IS=-4.7A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
Power dissipation
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Value
-4.7
-3.8
-18.8
28
-6
±12
2
-55... +150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2002-01-22

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Preliminary data
BSO211P
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
SMD version, device on PCB:
@ min. footprint, t<10s
@ 6 cm2 cooling area 1)
Symbol
Values
Unit
min. typ. max.
RthJS
RthJA
- - 50 K/W
- - 110
- - 62.5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=-250µA
Gate threshold voltage, VGS = VDS
ID =-25µA
Zero gate voltage drain current
VDS=-20V, VGS=0, Tj=25°C
VDS=-20V, VGS=0, Tj=150°C
Gate-source leakage current
VGS=-12V, VDS=0
Drain-source on-state resistance
VGS=-2.5V, ID=-3.7A
Drain-source on-state resistance
VGS=-4.5V, ID=-4.7A
V(BR)DSS -20
-
-V
VGS(th) -0.6 -0.9 -1.2
IDSS
IGSS
µA
- -0.1 -1
- -10 -100
- -10 -100 nA
RDS(on) - 86 110 m
RDS(on) - 53 67
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air; t 10 sec.
Page 2
2002-01-22

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Preliminary data
BSO211P
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Dynamic Characteristics
Transconductance
gfs
çVDSç2*çIDç*RDS(on)max 6.4 12.8
-S
ID =-3.8A
Input capacitance
Ciss
VGS=0, VDS=-15V,
- 690 920 pF
Output capacitance
Coss
f=1MHz
- 261 391
Reverse transfer capacitance Crss
- 214 321
Turn-on delay time
td(on)
VDD=-10V, VGS=-4.5V,
-
7.8 11.7 ns
Rise time
tr ID=-1A, RG=6
- 10.6 16
Turn-off delay time
td(off)
- 26.3 39.5
Fall time
tf
- 23.3 35
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
Qgd
Qg
VDD=-15V, ID=-4.7A
VDD=-15V, ID=-4.7A,
VGS=0 to -4.5V
Gate plateau voltage
V(plateau) VDD=-15V, ID=-4.7A
Reverse Diode
Inverse diode continuous
forward current
IS
TA=25°C
Inverse diode direct current,
pulsed
ISM
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
VSD
trr
Qrr
VGS=0, |IF| = |ID|
VR=-10V, |IF| = |lD|,
diF/dt=100A/µs
- 1.35 2 nC
- 5.6 8.1
- 15.9 23.9
- -1.9 - V
- - -2 A
- - -18.8
- -0.93 -1.4 V
- 24.3 30.4 ns
- 7.6 9.5 nC
Page 3
2002-01-22

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Preliminary data
BSO211P
1 Power dissipation
Ptot = f (TA)
BSO211P
2.2
W
2 Drain current
ID = f (TA)
parameter: |VGS|4.5 V
BSO211P
-5.5
A
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 °C 160
TA
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TA = 25 °C
-10 2 BSO211P
A
-10 1
/I D
= V DS
R DS(on)
tp = 41.0µs
100 µs
1 ms
-4.5
-4
-3.5
-3
-2.5
-2
-1.5
-1
-0.5
0
0 20 40 60 80 100 120 °C 160
TA
4 Transient thermal impedance
ZthJS = f (tp)
parameter : D = tp/T
10 2 BSO211P
K/W
10 1
10 0
-10 0
-10 -1
10 ms
DC
10 -1
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
-10
-2
-10
-1
-10 0
-10 1
V -10 2
VDS
Page 4
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
2002-01-22

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Preliminary data
BSO211P
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
40
A Vgs = -4V
Vgs = -3.5V
30
Vgs = -4.5V
25 Vgs = -5V
Vgs = -6V
Vgs = -7V
Vgs = -3V
20
15
10
Vgs = -2.5V
5
0
0 1 2 3 4 5 6 7 8 V 10
- VDS
7 Typ. transfer characteristics
ID= f ( VGS ); |VDS|2 x |ID| x RDS(on)max
parameter: tp = 80 µs
20
A
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
0.1
Vgs = -2.5V
Vgs = -3V
0.08
0.07
0.06
0.05
0.04
Vgs= - 3.5V
0.03 Vgs= - 4V
Vgs = - 4.5V
0.02 Vgs = - 5V
Vgs= - 6V
0.01 Vgs = - 7V
0
0 5 10 15 20 25 30 A 40
- ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: tp = 80 µs
20
S
16
14
12
10
8
6
4
2
0
0 0.5 1 1.5 2 V
3
- VGS
Page 5
16
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 A 20
- ID
2002-01-22