BSP315.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 BSP315 데이타시트 다운로드

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BSP 315
SIPMOS ® Small-Signal Transistor
• P channel
• Enhancement mode
• Logic Level
• VGS(th) = -0.8...-2.0 V
Type
BSP 315
Type
BSP 315
BSP 315
VDS
-50 V
ID
-1.1 A
Ordering Code
Q67000-S75
Q67000-S249
Pin 1 Pin 2 Pin 3 Pin 4
GD S D
RDS(on)
0.8
Package
SOT-223
Tape and Reel Information
E6327
E6433
Marking
BSP 315
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 k
Gate source voltage
Continuous drain current
TA = 39 °C
DC drain current, pulsed
TA = 25 °C
Power dissipation
TA = 25 °C
Symbol
VDS
VDGR
VGS
ID
IDpuls
Ptot
Values
-50
-50
± 20
-1.1
-4.4
1.8
Unit
V
A
W
Semiconductor Group
1
Sep-12-1996

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BSP 315
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Therminal resistance, junction-soldering point 1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
Tj
Tstg
RthJA
RthJS
Values
-55 ... + 150
-55 ... + 150
70
10
E
55 / 150 / 56
Unit
°C
K/W
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ. max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = -0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = -1 mA
Zero gate voltage drain current
VDS = -50 V, VGS = 0 V, Tj = 25 °C
VDS = -50 V, VGS = 0 V, Tj = 125 °C
VDS = -30 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage current
VGS = -20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = -10 V, ID = -1.1 A
V(BR)DSS
-50
VGS(th)
-0.8
IDSS
-
-
-
IGSS
-
RDS(on)
-
--
-1.1 -2
-0.1
-10
-
-1
-100
-100
-10 -100
0.65
0.8
Unit
V
µA
nA
nA
Semiconductor Group
2
Sep-12-1996

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BSP 315
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Dynamic Characteristics
Transconductance
gfs
VDS2 * ID * RDS(on)max, ID = -1.1 A
0.25
0.7
-
Input capacitance
Ciss
VGS = 0 V, VDS = 25 V, f = 1 MHz
- 300 400
Output capacitance
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
- 150 230
Reverse transfer capacitance
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
- 85 130
Turn-on delay time
td(on)
VDD = -30 V, VGS = -10 V, ID = -0.29 A
RGS = 50
- 8 12
Rise time
tr
VDD = -30 V, VGS = -10 V, ID = -0.29 A
RGS = 50
- 35 55
Turn-off delay time
td(off)
VDD = -30 V, VGS = -10 V, ID = -0.29 A
RGS = 50
- 80 110
Fall time
tf
VDD = -30 V, VGS = -10 V, ID = -0.29 A
RGS = 50
- 140 190
Unit
S
pF
ns
Semiconductor Group
3
Sep-12-1996

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BSP 315
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ. max.
Unit
Reverse Diode
Inverse diode continuous forward current IS
TA = 25 °C
Inverse diode direct current,pulsed
ISM
TA = 25 °C
Inverse diode forward voltage
VSD
VGS = 0 V, IF = -2.2 A, Tj = 25 °C
-
-
-
-
-
-1.2
A
-1.1
-4.4
V
-1.5
Semiconductor Group
4
Sep-12-1996

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BSP 315
Power dissipation
Ptot = ƒ(TA)
2.0
W
Ptot 1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 °C 160
TA
Safe operating area ID=f(VDS)
parameter : D = 0, TC=25°C
Drain current
ID = ƒ(TA)
parameter: VGS -10 V
-1.2
A
-1.0
ID
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0
20 40 60 80 100 120 °C 160
TA
Transient thermal impedance
Zth JA = ƒ(tp)
parameter: D = tp / T
10 2
K/W
ZthJC
10 1
10 0
Semiconductor Group
10 -1
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -4
10 -8
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2 10 -1s 10 0
tp
5 Sep-12-1996