BSS138W.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 BSS138W 데이타시트 다운로드

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SIPMOS® Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
• dv /dt rated
Product Summary
V DS
R DS(on),max
ID
BSS138W
60 V
3.5
0.28 A
SOT-323
Type
BSS138W
BSS138W
Package
SOT-323
SOT-323
Ordering Code
Q67042-S4187
Q67042-S4191
Tape and Reel Information
E6327: 3000 pcs/reel
E6433: 10000 pcs/reel
Marking
SWs
SWs
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD sensitivity (HBM) as per
MIL-STD 883
ID
I D,pulse
T A=25 °C
T A=70 °C
T A=25 °C
dv /dt
I D=0.28 A, V DS=48 V,
di /dt =200 A/µs,
T j,max=150 °C
V GS
Power dissipation
P tot T A=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
0.28
0.22
1.12
6
±20
Class 1
0.50
-55 ... 150
55/150/56
Unit
A
kV/µs
V
W
°C
Rev. 1.1
page 1
2004-04-16

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Parameter
Thermal characteristics
Thermal resistance,
junction - minimal footprint
Symbol Conditions
R thJA
BSS138W
min.
Values
typ.
Unit
max.
- - 250 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS= 0 V, I D=250 µA
60
-
-V
Gate threshold voltage
Drain-source leakage current
V GS(th) V GS=V DS, I D=26 µA 0.6 1.0 1.4
I D (off)
V DS=60 V,
V GS=0 V, T j=25 °C
-
- 0.1 µA
Gate-source leakage current
I GSS
V DS=60 V,
V GS=0 V, T j=150 °C
V GS=20 V, V DS=0 V
-
-
-5
1 10 nA
Drain-source on-state resistance
R DS(on) V GS=4.5 V, I D=0.03 A
-
3 4.0
Transconductance
V GS=4.5 V, I D=0.16 A
-
3.2
6
V GS=10 V, I D=0.2 A - 2.1 3.5
g fs
|V DS|>2|I D|R DS(on)max,
I D=0.22 A
0.12
0.23
-S
Rev. 1.1
page 2
2004-04-16

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Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
BSS138W
min.
Values
typ.
Unit
max.
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=0.2 A, R G=6
-
-
-
-
-
-
-
32 43 pF
7.2 10
2.8 4.2
2.2 3.3 ns
3.0 4.5
6.7 10
8.2 12
Q gs - 0.10 0.13 nC
Q gd V DD=48 V, I D=0.2 A,
Q g V GS=0 to 10 V
-
-
0.3 0.4
1.0 1.5
V plateau
- 3.2 - V
IS
I S,pulse
T A=25 °C
- - 0.28 A
- - 1.12
V SD
V GS=0 V, I F=0.28 A,
T j=25 °C
-
0.85 1.2 V
t rr V R=30 V, I F=0.28 A,
Q rr di F/dt =100 A/µs
-
-
8.3 12.4 ns
3.3 5 nC
Rev. 1.1
page 3
2004-04-16

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1 Power dissipation
P tot=f(T A)
2 Drain current
I D=f(T A); V GS10 V
BSS138W
0.3
0.5
0.25
0.4
0.2
0.3
0.15
0.2
0.1
0.1 0.05
0
0 40 80
T A [°C]
3 Safe operation area
I D=f(V DS); T A=25 °C; D =0
parameter: t p
101
120
0
160 0 40 80 120
T A [°C]
4 Max. transient thermal impedance
Z thJA=f(t p)
parameter: D =t p/T
103
limited by on-state
resistance
100
10-1
10-2
10 µs
100 µs
1 ms
10 ms
100 ms
DC
102 0.5
0.2
0.1
0.05
101
0.02
0.01
100 single pulse
10-1
160
10-3
1
Rev. 1.1
10
V DS [V]
10-2
100 10-6 10-5 10-4 10-3 10-2 10-1 100 101 102
t p [s]
page 4
2004-04-16

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5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
0.6
10 V 7 V 5 V 4.5 V
0.5
0.4
0.3
0.2
0.1
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
10
2.9 V 3.2 V
3.5 V
BSS138W
4V
8
4V
3.5 V
3.2 V
2.9 V
6
4
2
4.5 V
5V
7V
10 V
0
012345
V DS [V]
0
0 0.1 0.2 0.3 0.4 0.5
I D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
0.6 0.4
0.35
0.5
0.3
0.4
0.25
0.3 0.2
0.15
0.2
0.1
0.1
0.05
0
012345
V GS [V]
0
0.00
0.10
0.20
0.30
0.40
I D [A]
Rev. 1.1
page 5
2004-04-16