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DATA SHEET
SEMICONDUCTOR
GPP SURFACE MOUNT RECTIFIER
VOLTAGE- 50 to 1000 Volts CURRENT - 1.0 Amperes
G1A THRU G1M
SMF Unit: inch ( mm )
FEATURES
For surface mounted applications
Low profile package
Built-in strain relief
Easy pick and place
Plastic package has Underwriters Laboratory Flammability
Classification 94V-O utilizing
Low Forward Drop
High temperature soldering : 260°C /10 seconds at terminals
0.141(3.60)
0.126(3.20)
0.052(1.30)
0.043(1.10)
MECHANICAL DATA
Case: SMF molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA-481)
0.050MIN
(1.27MIN)
0.87MAX
(2.20MAX)
0.201REF
(5.1REF)
0.189(4.80)
0.173(4.40)
0.035(0.90)TYPICAL
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SY MBOLS G1A G1B G1D G1G G1J G1K G1M
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current,
at T L=75°C
VRRM
VRMS
VDC
I(AV)
50
35
50
100 200 400 600 800 1000
70 140 280 420 560 700
100 200 400 600 800 1000
1.0
V
V
V
A
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
I FSM
30 A
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Curren
TA =25°C
at Rated DC Blocking Voltage
TA =125°C
Maximum Reverse Recovery Time(Note 1) TJ=25°C
Typical Junction Capacitance (Note 2)
Maximum Thermal Resistance(Note 3)
Operating and Storage Temperature Range
VF
IR
TRR
CJ
Rө JA
TJ,TSTG
1.1
5.0
100
2.5
12
75
-55 to +150
V
µA
µA
µs
pF
°C/ W
°C
NOTES:
1. Reverse Recovery Test Conditions: I F=0.5A, I R=1.0A, I rr =0.25A
2. Measured at 1 MHz and applied V r= 4.0 volts.
3. 8.0 mm2 ( .013mm thick ) land areas.
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1
REV.03 20150105

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RATING AND CHARACTERISTIC CURVES
G1A THRU G1M
3.0
SINGLE PHASE HALF WAVE 60Hz
2.5 RESISTIVE OR INDUCTIVE LOAD
P.C.B MOUNTED ON 0.315 X 0.315" (8.0 x 8.0mm)
COPPER PAD AREAS
2.0
1.5
1.0
0.5
0
0 75
LEAD TEMPERATURE, O C
Fig.1-FORWARD CURRENT DERATING CURVE
150
100
10
TJ = 100OC
1.0
0.1
0.01
TJ = 75OC
TJ = 25OC
0.001
0
20 40
60 80 100 120 140
PERCENT OF PEAK REVERSE VOLTAGE, %
Fig.3-TYPICAL REVERSE CHARACTERISTICS
100
50
20
10
Units Mounted On
20in2 (5.4mm)+0.5mil
5 inches(0.013mm)
Thick copper Land Areas
2
1
0.01
0.1
1.0
10
HEATING TIME(SEC)
Fig.5-TRANSIENT THERMAL IMPEDANCE
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100
2
100
40
20
10
4.0
2.0
1.0
0.4
0.2
0.1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
1.8
Fig.2-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
30
8.3ms Single Half Sine-Wave
25 JEDEC Method
20
15
10
5
0
12
6 10
20 40 60 100
NUMBER OF CYCLES AT 60Hz
Fig.4-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
100
50
20
10
5
TJ = 25OC
f = 1.0mHz
Vsig = 50mVp-p
2
1
0.1 1.0
10 100
REVERSE VOLTAGE, VOLTS
Fig.6-TYPICAL JUNCTION CAPACITANCE
1000
REV.03 20150105