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VISHAY
Standard Sinterglass Diode
G1A / B / D / G / J / K / M
Vishay Semiconductors
Features
• High temperature metallurgically bonded con-
structed rectifiers
• Cavity-free glass passivated junction in DO-
204AP package
• Hermetically sealed package
• 1.0 ampere operation at Tamb = 100 °C with no
thermal runaway
Mechanical Data
Case: DO-204AP Sintered glass case
Terminals: Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 560 mg
17031
Parts Table
G1A
Part
G1B
G1D
G1G
G1J
G1K
G1M
Type differentiation
VRRM = 50 V
VRRM = 100 V
VRRM = 200 V
VRRM = 400 V
VRRM = 600 V
VRRM = 800 V
VRRM = 1000 V
Package
DO-204AP(G-1)
DO-204AP(G-1)
DO-204AP(G-1)
DO-204AP(G-1)
DO-204AP(G-1)
DO-204AP(G-1)
DO-204AP(G-1)
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage = Repetitive
peak reverse voltage
see electrical characteristics
Maximum average forward
rectified current
0.375 " (9.5 mm) lead length at
Tamb = 100 °C
Part
G1A
G1B
G1D
G1G
G1J
G1K
G1M
Symbol
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
IF(AV)
Value
50
100
200
400
600
800
1000
1.0
Unit
V
V
V
V
V
V
V
A
Document Number 86084
Rev. 1.3, 11-Aug-04
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G1A / B / D / G / J / K / M
Vishay Semiconductors
VISHAY
Parameter
Peak forward surge current
Maximum full load reverse
current
Operating junction and storage
temperature range
Test condition
8.3 ms single half sine-wave
superimposed on rated load
(JEDEC Method)
full cycle average 0.375 "
(9.5 mm) lead length at
Tamb = 100 °C
Part
Symbol
Value
Unit
IFSM
50
A
IR(AV)
200
µA
TJ, TSTG - 55 to + 175
°C
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Typical thermal resistance 1)
RθJL
1) Thermal resistance from junction to ambient at 0.375 " (9.5 mm) lead length, P.C.B. mounted
Value
55
Unit
K/W
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Maximum instantaneous
forward voltage
IF = 1 A
Maximum reverse current
Typical reverse recovery time
Typical junction capacitance
VR = VRRM, Tamb = 25 °C
VR = VRRM, Tamb = 150 °C
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
VR = 4.0 V, f = 1 MHz
Part
G1A
G1B
G1D
G1G
G1J
G1K
G1M
Symbol
VF
VF
VF
VF
VF
VF
VF
IR
IR
trr
Cj
Min
Typ. Max Unit
1.2 V
1.2 V
1.1 V
1.1 V
1.1 V
1.1 V
1.1 V
2.0 µA
100 µA
1.5 µs
15 pF
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1.0
0.8
Capacitance
0.6 Load
Ipk/IAV = 5.0
10
20
0.4
60HZ Resistive or
Inductive Load
0.2
0.375" (9.5mm)
Lead Length
0
0 25 50 75 100 125 150 175
gg1a_01
Ambient T emperature C)
Figure 1. Forward Current Derating Curve
50
TJ = TJ max.
8.3ms Single Half Sine-W ave
(JEDEC Method)
40
30
20
10
0
1
gg1a_02
10
Number of Cycles at 60HZ
100
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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Document Number 86084
Rev. 1.3, 11-Aug-04

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VISHAY
G1A / B / D / G / J / K / M
Vishay Semiconductors
10
TJ = 150°C
1 TJ = 25°C
0.1
Pulse Width = 300µs
1% Duty Cycle
0.01
0.4
gg1a_03
0.6 0.8 1.0 1.2 1.4
Instantaneous Forward Voltage (V)
1.6
Figure 3. Typical Instantaneous Forward Characteristics
10
TJ = 125°C
1
TJ = 75°C
0.1
TJ = 25°C
0.01
0
gg1a_04
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
30
TJ = 25°C
f = 1.0MHZ
Vsig = 50mVp-p
10
1
1
gg1a_05
10
Reverse Voltage (V)
100
Figure 5. Typical Junction Capacitance
Document Number 86084
Rev. 1.3, 11-Aug-04
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G1A / B / D / G / J / K / M
Vishay Semiconductors
Package Dimensions in mm (Inches)
0.86 (0.034)
0.71 (0.028)
DIA.
25.4 (1.0)
MIN.
3.8 (0.150)
2.5 (0.100)
DIA.
17030
6.1 (0.240)
MAX.
25.4 (1.0)
MIN.
VISHAY
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Document Number 86084
Rev. 1.3, 11-Aug-04

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VISHAY
G1A / B / D / G / J / K / M
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 86084
Rev. 1.3, 11-Aug-04
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