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General Purpose Plastic Rectifier
M100A thru M100M
Vishay General Semiconductor
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
IR
VF
Tj max.
1.0 A
50 V to 1000 V
50 A
1.0 µA
1.0 V, 1.1 V
150 °C
DO-204AL (DO-41)
Features
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Solder Dip 260 °C, 40 seconds
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
application.
(Note: These devices are not Q101 qualified. There-
fore, the devices specified in this datasheet have not
been designed for use in automotive or Hi-Rel appli-
cations.)
Mechanical Data
Case: DO-204AL, molded epoxy body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and JESD22-B102D
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 100 °C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Maximum full load reverse current full cycle
average 0.375" (9.5 mm) lead length
at TA = 55 °C
Operating junction and storage temperature
range
Symbol
VRRM
VRMS
VDC
IF(AV)
M100A M100B M100D M100G M100J
50 100 200 400 600
35 70 140 280 420
50 100 200 400 600
1.0
M100K M100M
800 1000
560 700
800 1000
Unit
V
V
V
A
IFSM 50 A
IR(AV) 100 µA
TJ,TSTG
- 50 to + 150
°C
Document Number 88659
30-Aug-05
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M100A thru M100M
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Test condition
Maximum
at 1.0 A
instantaneous forward
voltage
Maximum DC reverse
current at rated DC
blocking voltage
TA = 25 °C
TA = 100 °C
Typical reverse
recovery time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
Typical junction
capacitance
at 4.0 V, 1 MHz
Symbol
VF
IR
trr
CJ
M100A M100B M100D M100G M100J
1.0
1.0
50
2.0
15
M100K M100M
1.1
Unit
V
µA
µs
pF
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Typical thermal resistance(1)
Symbol
RθJA
RθJL
M100A
M100B
M100D M100G
50
25
M100J
M100K
M100M
Unit
°C/W
Note: (1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
1.2
60 Hz
Resistive or
1.0 Inductive Load
0.8
0.6
0.4
0.2
0
0
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pads
0.375" (9.5 mm) Lead Length
25 50 75
100
125
Ambient Temperature, °C
Figure 1. Forward Current Derating Curve
150
50
TA = 75 °C
8.3 ms Single Half Sine-Wave
40
30
20
10
0
1 10 100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
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Document Number 88659
30-Aug-05

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M100A thru M100M
Vishay General Semiconductor
100
10
TJ = 25 °C
1
Pulse Width = 300 µs
0.1 1% Duty Cycle
0.01
0.6
0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
1.8
Figure 3. Typical Instantaneous Forward Characteristics
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
10
1
0.1 1 10 100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
1000
100
TJ = 150 °C
10
1
0.1
0.01
0
TJ = 25 °C
20 40 60 80
Percentage of Peak Reverse Voltage (%)
100
Figure 4. Typical Reverse Characteristics
100
10
1
0.1
0.01
0.1 1
10
t - Pulse Duration (sec.)
100
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-204AL (DO-41)
0.107 (2.7)
0.080 (2.0)
DIA.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
Document Number 88659
30-Aug-05
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
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