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TGL41-6.8A thru TGL41-200A
Vishay General Semiconductor
TRANSZorb® Transient Voltage Suppressors
DO-213AB (GL41)
FEATURES
• Plastic MELF package
• Ideal for automated placement
• Glass passivated pallet chip junction
• Available in uni-directional polarity only
• 400 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate
(duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 250 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VBR uni-directional
6.45 V to 210 V
VWM
5.8 V to 171 V
PPPM
PD
IFSM
400 W, 200 W
1.0 W
40 A
TJ max.
150 °C
Polarity
Uni-directional
Package
DO-213AB (GL41)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case: DO-213AB (GL41)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Blue band denotes the cathode which is positive
with respect to the anode under normal TVS operation
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)
PPPM
400
Power dissipation on infinite heatsink at TL = 75 °C
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3)
Peak forward surge current, 8.3 ms half sine-wave uni-directional only (2)
PD
IPPM
IFSM
1.0
See next table
40
Maximum instantaneous forward voltage at 25 A for uni-directional only
VF
3.5
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2. Rating is 200 W above 91 V
(2) Measured at 8.3 ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum
UNIT
W
W
A
A
V
°C
Revision: 03-Jun-15
1 Document Number: 88403
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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TGL41-6.8A thru TGL41-200A
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
BREAKDOWN
VOLTAGE
VBR (1)
(V)
MIN. MAX.
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM ID
(μA)
MAXIMUM
PEAK
PULSE
CURRENT
IPPM (2)
(A)
TGL41-6.8A
TGL41-7.5A
TGL41-8.2A
TGL41-9.1A
TGL41-10A
TGL41-11A
TGL41-12A
TGL41-13A
TGL41-15A
TGL41-16A
TGL41-18A
TGL41-20A
TGL41-22A
TGL41-24A
TGL41-27A
TGL41-30A
TGL41-33A
TGL41-36A
TGL41-39A
TGL41-43A
TGL41-47A
TGL41-51A
TGL41-56A
TGL41-62A
TGL41-68A
TGL41-75A
TGL41-82A
TGL41-91A
TGL41-100A
TGL41-110A
TGL41-120A
TGL41-130A
TGL41-150A
TGL41-160A
TGL41-170A
TGL41-180A
TGL41-200A
6.45
7.13
7.79
8.65
9.5
10.5
11.4
12.4
14.3
15.2
17.1
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95.0
105
114
124
143
152
162
171
190
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21.0
23.1
25.2
28.4
31.5
34.7
37.8
41.0
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.5
105
116
126
137
158
168
179
189
210
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.80
1000
38.1
6.40 500 35.4
7.02 200 33.1
7.78 50.0 29.9
8.55 10.0 27.6
9.40 5.0 25.6
10.2 5.0 24.0
11.1 5.0 22.0
12.8 5.0 18.9
13.6 5.0 17.8
15.3 5.0 15.9
17.1 5.0 14.4
18.8 5.0 13.1
20.5 5.0 12.0
23.1 5.0 10.7
25.6 5.0 9.7
28.2 5.0 8.8
30.8 5.0 8.0
33.3 5.0 7.4
36.8 5.0 6.7
40.2 5.0 6.2
43.6 5.0 5.7
47.8 5.0 5.2
53.0 5.0 4.7
58.1 5.0 4.3
64.1 5.0 3.9
70.1 5.0 3.5
77.8 5.0 3.2
85.5 5.0 1.46
94.0 5.0 1.32
102 5.0 1.21
111 5.0 1.12
128 5.0 0.97
136 5.0 0.91
145 5.0 0.85
154 5.0 0.81
171 5.0 0.73
Notes
(1) Pulse test: tp 50 ms
(2) Surge current waveform per fig. 3 and derate per fig. 2
(2) All terms and symbols are consistent with ANSI/IEEE C62.35
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
103
113
125
137
152
165
179
207
219
234
246
274
MAXIMUM
TEMPERATURE
COEFFICENT
OF VBR
(%/°C)
0.060
0.064
0.068
0.071
0.076
0.078
0.081
0.084
0.087
0.089
0.091
0.093
0.095
0.097
0.099
0.100
0.101
0.102
0.103
0.104
0.104
0.105
0.106
0.107
0.107
0.108
0.108
0.109
0.109
0.110
0.110
0.110
0.111
0.111
0.111
0.111
0.111
ORDERING INFORMATION (Example)
PREFERRED PIN UNIT WEIGHT (g) PREFERRED PACKAGE CODE
TGL41-6.8A-E3/96
0.134
96
TGL41-6.8A-E3/97
0.134
97
BASE QUANTITY
1500
5000
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 03-Jun-15
2 Document Number: 88403
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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TGL41-6.8A thru TGL41-200A
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
10
TGL41-6.8 TGL91A
1
TGL41-100 TGL200A
0.1
0.1 µs
1.0 µs 10 µs 100 µs 1.0 ms
td - Pulse Width
10 ms
Fig. 1 - Peak Pulse Power Rating Curve
10 000
1000
Measured at
Zero Bias
Measured at Stand-Off
100 Voltage VWM
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1 10
Uni-Directional
100 1000
VBR - Breakdown Voltage (V)
Fig. 4 - Typical Junction Capacitance
100
75
50
25
0
0 25 50 75 100 125 150 175 200
TJ - Initial Temerature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
1.00
0.75
0.50
0.25
0
0 25 50 75 100 125 150 175 200
TL - Lead Temerature (°C)
Fig. 5 - Power Derating Curve
150
tr = 10 µs
TJ = 25 °C
Pulse Width (td)
Peak Value
is defined as the Point
IPPM where the Peak Current
100 decays to 50 % of IPPM
Half Value - IPP
IPPM
2
50 10/1000 µs Waveform
as defined by R.E.A.
td
0
0 1.0 2.0 3.0
t - Time (ms)
Fig. 3 - Pulse Waveform
4.0
50
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
40
30
20
10
0
1 10 100
Number of Cycles at 60 Hz
Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current
Uni-Directional Only
Revision: 03-Jun-15
3 Document Number: 88403
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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TGL41-6.8A thru TGL41-200A
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-213AB (GL41)
Solderable Ends
1st Band
D2
=
D1
+
-
0
0.008
(0.20)
D2
D1 =
0.105
0.095
(2.67)
(2.41)
0.022 (0.56)
0.018 (0.46)
0.205 (5.2)
0.185 (4.7)
0.022 (0.56)
0.018 (0.46)
1st Band Denotes Type and Positive End (Cathode)
0.049 (1.25)
MIN.
Mounting Pad Layout
0.138 (3.5)
MAX.
0.118 (3.0)
MIN.
0.238 (6.0)
REF.
Revision: 03-Jun-15
4 Document Number: 88403
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000