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BZX55B Series
Zener diode
Features
High reliability
Applications
Voltage stabilization
Absolute Maximum Ratings
Tj=25
Parameter
Power dissipation
Z-current
Junction temperature
Storage temperature range
Test Conditions
I=4mm TL25
Type
Symbol
PV
IZ
Tj
Tstg
Value
500
PV/VZ
175
-65~+175
Unit
mW
mA
Maximum Thermal Resistance
Tj=25
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
I=4mm TL=constant
RthJA 350 K/W
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
Tj=25
Parameter
Forward voltage
Test Conditions
IF=200mA
Type
Symbol Min Typ Max Unit
VF 1.5 V
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BZX55B Series
Type
BZX55B
2V0
2V2
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
VZnom
V
2.0
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
IZT
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
for VZT and
V
1.96~2.04
2.15~2.25
2.35~2.45
2.64~2.76
2.94~3.06
3.24~3.36
3.52~3.68
3.82~3.98
4.22~4.38
4.6~4.8
5.0~5.2
5.48~5.72
6.08~6.32
6.66~6.94
7.35~7.65
8.04~8.36
8.92~9.28
9.8~10.2
10.78~11.22
11.76~12.24
12.74~13.26
14.7~15.3
15.7~16.3
17.64~18.36
19.6~20.4
21.55~22.45
23.5~24.5
26.4~27.6
29.4~30.6
32.4~33.6
35.3~36.7
38.2~39.8
42.1~43.9
46.1~47.9
50~52
54.9~57.1
60.8~63.2
66.6~69.4
73.5~76.5
rzjT
<100
<100
<85
<85
<85
<85
<85
<85
<75
<60
<35
<25
<10
<8
<7
<7
<10
<15
<20
<20
<26
<30
<40
<50
<55
<55
<80
<80
<80
<80
<80
<90
<90
<110
<125
<135
<150
<200
<250
rzjK at IZK
mA
<600 1
<600 1
<600 1
<600 1
<600 1
<600 1
<600 1
<600 1
<600 1
<600 1
<550 1
<450 1
<200 1
<150 1
<50 1
<50 1
<50 1
<70 1
<70 1
<90 1
<110 1
<110 1
<170 1
<170 1
<220 1
<220 1
<220 1
<220 1
<220 1
<220 1
<220 1
<500 0.5
<600 0.5
<700 0.5
<700 0.5
<1000 0.5
<1000 0.5
<1000 0.5
<1500 0.5
IR and IR at VR
µA µA1)
V
<150 <300 1
<150 <300 1
<50 <100 1
<10 <50
1
<4 <40
1
<2 <40
1
<2 <40
1
<2 <40
1
<1 <20
1
<0.5 <10
1
<0.1 <2
1
<0.1 <2
1
<0.1 <2
2
<0.1 <2
3
<0.1 <2
5
<0.1 <2 6.2
<0.1 <2 6.8
<0.1 <2 7.5
<0.1 <2 8.2
<0.1 <2 9.1
<0.1 <2
10
<0.1 <2
11
<0.1 <2
12
<0.1 <2
13
<0.1 <2
15
<0.1 <2
16
<0.1 <2
18
<0.1 <2
20
<0.1 <2
22
<0.1 <2
24
<0.1 <2
27
<0.1 <5 30
<0.1 <5 33
<0.1 <5 36
<0.1 <10 39
<0.1 <10 43
<0.1 <10 47
<0.1 <10 51
<0.1 <10 56
1) at Tj=150
TKVZ
%/K
-0.09~-0.06
-0.09~-0.06
-0.09~-0.06
-0.09~-0.06
-0.08~-0.05
-0.08~-0.05
-0.08~-0.05
-0.08~-0.05
-0.06~-0.03
-0.05~+0.02
-0.02~+0.02
-0.05~+0.05
0.03~0.06
0.03~0.07
0.03~0.07
0.03~0.08
0.03~0.09
0.03~0.1
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
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BZX55B Series
Characteristics (Tj=25unless otherwise specified)
Figure 1. Thermal Resistance vs. Lead length
Figure 4. Typical Change of Working Voltage Vs.
Junction Temperature
Figure 2. Total Power Dissipation vs. Ambient
Temperature
Figure 5. Temperature Coefficient of Vz vs. Z-Voltage
Figure 3. Typical Change of Working Voltage under
Operating Conditions at Tamb=25
Figure 6. Diode Capacitance vs. Z-voltage
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BZX55B Series
Figure 7. Forward Current vs. Forward Voltage
Figure 9. Z-Current vs. Z-Voltage
Figure 8. Z-Current vs. Z-Voltage
Figure 10. Differential Z-Resistance Vz vs. Z-Voltage
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Figure 11. Thermal Response
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Dimensions in mm
BZX55B Series
Φ2.0 max.
Cathode
Cathode identification
Type No.
BZ X
55B
Φ0.55 max.
Anode
26 min.
4.2 max.
26 min.
Standard Glass Case
JEDEC DO-35
Marking
BZX
55B
5V1
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