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4 1N5391G-T - 1N5399G-T
Taiwan Semiconductor
1.5A, 50V - 1000V Glass Passivated Rectifier
FEATURES
Glass passivated chip junction
High efficiency, Low VF
High current capability
High surge current capability
Low power loss
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
TV
Monitor
KEY PARAMETERS
PARAMETER
VALUE
UNIT
IF(AV)
VRRM
IFSM
TJ MAX
Package
1.5 A
50 - 1000
V
50 A
150 °C
DO-204AC (DO-15)
Configuration
Single die
MECHANICAL DATA
Case: DO-204AC (DO-15)
Molding compound meets UL 94V-0 flammability rating
Packing code with suffix "G" means green compound
(halogen-free)
Terminal: Pure tin plated leads, solderable per J-STD-002
Meet JESD 201 class 1A whisker test
Polarity: As marked
Weight: 0.4 g (approximately)
DO-204AC (DO-15)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
1N5391 1N5392 1N5393 1N5395 1N5397 1N5398 1N5399
SYMBOL
G-T G-T G-T G-T G-T G-T G-T
Marking code on the device
1N5391G 1N5392G 1N5393G 1N5395G 1N5397G 1N5398G 1N5399G
Repetitive peak reverse
voltage
Reverse voltage, total rms
value
VRRM
VR(RMS)
50
35
100 200 400 600 800 1000
70 140 280 420 560 700
Forward current
Surge peak forward current,
8.3 ms single half sine-wave
superimposed on rated load
per diode
IF(AV)
IFSM
1.5
50
Junction temperature
TJ
- 55 to +150
Storage temperature
TSTG
- 55 to +150
UNIT
V
V
A
A
°C
°C
1 Version:A1703

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4 1N5391G-T - 1N5399G-T
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to- ambient thermal resistance
SYMBOL
RӨJA
LIMIT
65
UNIT
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS SYMBOL
1N5391G-T
1N5392G-T
Forward voltage per diode (1)
1N5393G-T
1N5395G-T
1N5397G-T
IF = 1.5A,TJ = 25°C
VF
1N5398G-T
1N5399G-T
Reverse current @ rated VR per diode (2)
Junction capacitance
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
TJ = 25°C
TJ = 125°C
1 MHz, VR=4.0V
IR
CJ
TYP
-
-
-
-
15
MAX UNIT
1.1 V
1.0 V
5 µA
100 µA
- pF
ORDERING INFORMATION
PART NO.
PACKING
CODE
PACKING CODE
SUFFIX
1N539xG-T
(Note 1, 2)
A0
R0
B0
G
Notes:
1. "x" defines voltage from 50V (1N5391G-T) to 1000V (1N5399G-T)
2. Whole series with green compound (halogen-free)
PACKAGE
PACKING
DO-15
DO-15
DO-15
1,500 / Ammo box
3,500 / 13" Paper reel
1,000 / Bulk packing
EXAMPLE P/N
EXAMPLE P/N
1N5391G-T A0G
PART NO.
1N5391G-T
PACKING CODE
A0
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
2 Version:A1703

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4 1N5391G-T - 1N5399G-T
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
2
1000
Fig.2 Typical Junction Capacitance
1.5
1
0.5
0
0 25 50 75 100 125 150 175
LEAD TEMPERATURE(oC)
100
10
f=1.0MHz
Vslg=50mVp-p
1
0.1 1 10
REVERSE VOLTAGE (V)
100
Fig.3 Typical Reverse Characteristics
100
TJ=125
10
TJ=75
1
TJ=25
0.1
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig.4 Typical Forward Characteristics
1010
1N5393G-T - 1N5399G-T
UF1DLW
1
1 TJ=125°C
0.1
TJ=25°C
1N5391G-T - 1N5392G-T
00.1.01
0.001
0.01 0.3
0.4
Pulse width
0.4 0.5 0.6 0.7 0.8 0.9 1
0.6 0.8 1 1.2 1.4
FORWARD VOLTAGE (V)
1.1
1.6
1.2
3 Version:A1703

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4
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig5. Maximum Non-repetitive Forward Surge Current
80
8.3ms Single Half Wave
60
40
20
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
1N5391G-T - 1N5399G-T
Taiwan Semiconductor
4 Version:A1703

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4
PACKAGE OUTLINE DIMENSIONS
DO-204AC (DO-15)
1N5391G-T - 1N5399G-T
Taiwan Semiconductor
DIM.
A
B
C
D
E
Unit (mm)
Min Max
2.60 3.60
0.70 0.90
25.40
-
5.80 7.60
25.40
-
Unit (inch)
Min Max
0.102 0.142
0.028 0.035
1.000
-
0.228 0.299
1.000
-
MARKING DIAGRAM
P/N
G
YWW
F
= Marking Code
= Green Compound
= Date Code
= Factory Code
5 Version:A1703