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Leaded Schottky Barrier Rectifiers
SB120-G Thru. SB1100-G
Voltage: 20 to 100 V
Current: 1.0 A
RoHS Device
Features
-Low drop down voltage.
-Metal-Semiconductor junction with guard ring
-High surge current capability
-Silicon epitaxial planar chips.
-For use in low voltage, high efficiency inverters,
free wheeling, and polarity protection applications
-Lead-free part, meet RoHS requirements.
Comchip
SMD Diode Specialist
DO-41
.107(2.7)
.080(2.0)
1.0(25.4) Min.
.205(5.2)
.160(4.1)
Mechanical data
-Epoxy: UL94-V0 rated flame retardant
-Case: Molded plastic body DO-41
-Terminals: Solderable per MIL-STD-750 Method 2026
-Polarity: Color band denotes cathode end
-Mounting Position: Any
-Weight: 0.34grams
.034(0.86)
.028(0.70)
1.0(25.4) Min.
Dimensions in inches and (millimeter)
Electrical Characteristics (at TA=25°C unless otherwise noted)
Ratings at Ta=25°C unless otherwise noted.
Parameter
Symbol
SB
120-G
SB
140-G
SB
145-G
Maximum recurrent peak reverse voltage
VRRM
20
40
45
SB
150-G
50
SB
160-G
60
SB SB
180-G 1100-G
80 100
Unit
V
Maximum RMS voltage
VRMS
14
28
30
35
42
56
70
V
Maximum DC blocking voltage
Maximum average forward rectified current
0.375” (9.5mm) lead length at TA=75°C, See Figure 1
Peak forward surge current
8.3ms single half sine-wave superimposed on rated load
(JEDEC method) TL=110°C
Maximum forward voltage at 1.0A
Maximum DC reverse current TA=25°C
At rated DC blocking voltage TA=100°C
VDC
I(AV)
IFSM
VF
IR
20 40 45
0.50
10
50 60 80 100
1.0
30
0.70
0.85
0.5
5
V
A
A
V
mA
Typical junction capacitance (Note 1)
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
CJ
RθJA
RθJL
TJ
TSTG
110
-55 to +125
80
50.0
30.0
-55 to +150
-55 to +150
30
pF
°C/W
°C
°C
NOTES:
1. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts.
2. Thermal resistance junction to ambient and junction to lead.
QW-BB040
Comchip Technology CO., LTD.
REV:A
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Leaded Schottky Barrier Rectifiers
Comchip
SMD Diode Specialist
RATING AND CHARACTERISTIC CURVES (SB120-G Thru. SB1100-G)
Fig.1- Forward Current Derating Curve
1.2
1.0
Fig.2 - Maximum Non-repetitive Peak
Forward Surge Current
100
0.8
0.6 SB120-G ~ SB145-G
0.4
SB150-G ~ SB1100-G
0.2 single phase half wave 60Hz
resistive or inductive load
0 3.75”(9.5mm) lead length
0 25 50 75 100 125 150 175
Lead Temperature, ( °C )
10
TL=110°C
8.3mS single half sine-wave
(JEDEC Method)
11
10
Number of Cycles at 60Hz
100
Fig.3 - Typical Instantaneous Forward
Characteristics
10
pulse width =300µS
1% duty cycle, Tj=25°C
SB120-G ~ SB145-G
1.0
0.1 SB150-G ~ SB160-G
0.01
0
SB180-G ~ SB1100-G
0.2 0.4 0.6 0.8
Instantaneous Forward Voltage, (V)
1.0
Fig.4A - Typical Reverse Characteristics
100
SB120-G ~ SB145-G
10
TJ=125°C
1.0
TJ=75°C
0.1
0.01
TJ=25°C
0.001
0
20 40 60 80 100 120 140
Percent of Rated Peak Reverse Voltage, (%)
1000
Fig.5 - Typical Junction Capacitance
Fig. 4B - Typeical Reverse Characteristic
1000
SB120-G ~ SB1100-G
100
10
0.1
QW-BB040
TJ=25°C
f=1.0MHz
100 TJ=150°C
TJ=125°C
10
TJ=100°C
1.0
0.1
1.0 10
Reverse Voltage, (V)
0.01 TJ=25°C
100
0
20
40 60
80 100
Percent of Rated Peak Reverse Voltage, ( %)
Comchip Technology CO., LTD.
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Leaded Schottky Barrier Rectifiers
Marking Code
Comchip
SMD Diode Specialist
Part Number Marking Code Packaging
SB120T-G
SB140T-G
SB145T-G
SB150T-G
SB160T-G
SB180T-G
SB1100T-G
SB120A-G
SB140A-G
SB145A-G
SB150A-G
SB160A-G
SB180A-G
SB1100A-G
SB120B-G
SB140B-G
SB145B-G
SB150B-G
SB160B-G
SB180B-G
SB1100B-G
SB120
SB140
SB145
SB150
SB160
SB180
SB1100
SB120
SB140
SB145
SB150
SB160
SB180
SB1100
SB120
SB140
SB145
SB150
SB160
SB180
SB1100
REEL
REEL
REEL
REEL
REEL
REEL
REEL
AMMO
AMMO
AMMO
AMMO
AMMO
AMMO
AMMO
BULK
BULK
BULK
BULK
BULK
BULK
BULK
SBXXX
XXX / XXXX = Product type marking code
Note:
1) Suffix code after part number to specify packaging item .
Packaging
REEL PACK
AMMO PACK
BULK PACK
Code
T
A
B
Standard Packaging
Case Type
REEL PACK
REEL
( pcs )
Reel Size
(inch)
DO-41
5,000
13
Case Type
DO-41
AMMO PACK
BOX
( pcs )
5,000
Case Type
DO-41
BULK PACK
BOX
( pcs )
1000
QW-BB040
Comchip Technology CO., LTD.
REV:A
Page 3