SS115F.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 SS115F 데이타시트 다운로드

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SMD Type
Schottky Barrier Diodes
SS12F ~ SS120F
TransDisiotodress
Ƶ Features
ƽ Metal silicon junction, majority carrier conduction
ƽ For surface mounted applications
ƽ Low power loss, high efficiency
ƽ High forward surge current capability
ƽ For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
SMAF
12
Top View
Simplified outline SMAF and symbol
PIN DESCRIPTION
PIN DESCRIPTION
1 Cathode
2 Anode
Ƶ Absolute Maximum Ratings Ta = 25ć unless otherwise specified
Parameter
Symbol
SS
12F
SS
14F
SS
16F
SS SS SS SS SS
18F 110F 112F 115F 120F
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
Maximum DC Blocking Voltage
Instantaneous Forward Voltage at 1A
VRRM
VRSM
VDC
VF
20 40
14 28
20 40
0.55
60 80
42 56
60 80
0.7
100 120
70 84
100 120
0.85
150 200
105 140
150 200
0.9
Averaged Forward Current
IO
1
Peak forward surge current
IFSM
40
30
Maximum DC Reverse Current
at rated DC blocking voltage
TA=25ć
TA=100ć
IR
0.3
10
0.5 0.1
22
Typical Junction Capacitance *1
Cj 110
80
Typical thermal resistance
*2
RthJA
95
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55 to 150
* 1 Measured at 1MHz and applied reverse voltage of 4V D.C
* 2. Mounted on glass epoxy PC board with 4×1.5ą×1.5ą(3.81×3.81 cm) copper pad.
Unit
V
A
mA
pF
ć/W
ć
Ƶ Marking
NO.
Marking
SS12F
SS12
SS14F
SS14
SS16F
SS16
SS18F SS110F SS112F SS115F
SS18 SS110 SS112 SS115
SS120F
SS120
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SMD Type
TransDisiotodress
Schottky Barrier Diodes
SS12F ~ SS120F
Ƶ Typical Characterisitics
Fig.1 Forward Current Derating Curve
1.2
1.0
0.8
0.6
0.4
0.2
Single phase half-wave 60Hz
resistive or inductive load
0.0
25 50 75
100
125
Case Temperature (°C)
150
Fig.2 Typical Reverse Characteristics
10 4
10 3
10 2
TJ=100°C
TJ=75°C
101
TJ=25°C
10 0
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage˄˅
Fig.3 Typical Forward Characteristic
20
10
1.0 SS12F/SS14F
SS16F/SS18F
SS110F/SS112F
SS115F/SS120F
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instaneous Forward Voltage (V)
Fig.4 Typical Junction Capacitance
500
200
TJ=25°C
100
50
20
10
0.1
SS12F/SS14F
SS16F-SS120F
1 10
Reverse Voltage (V)
100
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
50
SS12F-SS18F
SS110F-SS120F
40
30
20
10
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1 10
Number of Cycles at 60Hz
100
Fig.6- Typical Transient Thermal Impedance
1000
100
10
1
0.01
0.1 1
10
t, Pulse Duration˄sec˅
100
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SMD Type
Schottky Barrier Diodes
SS12F ~ SS120F
Ƶ Package Outline Dimensions
Plastic surface mounted package; 2 leads
TransDisiotodress
SMAF
ğA LL R O U N D
ğA LL R O U N D
HE V M A E
DA
g
g
Top View
Bottom View
UNIT
ACDE e
max 1.1 0.20 3.7 2.7 1.6
mm
min 0.9 0.12 3.3 2.4 1.3
max 43
mil
min 35
7.9 146 106
4.7 130 94
63
51
g HE
1.2 4.9
0.8 4.4
47 193
31 173
ğ
7°
Ƶ The Recommended Mounting Pad Size
1.6
(63)
2.2
(86)
1.6
(63)
Unit ˖(mmmil)
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