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UM7500
POWER PIN DIODES
DESCRIPTION
The UM7500 series features Microsemi’s
innovative passivated chip design which
takes advantage of the latest silicon wafer
bonding and junction passivation
techniques. This new series of PIN diodes
incorporates all of the desirable RF
properties of previous Microsemi diodes
plus extremely low leakages and very stable
reverse characteristics. Power dissipation
capability is assured by Microsemi’s
metallurgically bonded, fused in glass
construction. This technique continues to be
the optimum approach for applications
requiring reliable, high power diodes.
Low leakage distortion is achieved by
maintaining high carrier lifetime and accurately
controlling I-region thickness throughout the
process. The UM7500 series is designed for use
in a broad range of RF and microwave switch and
attenuator circuits. The packages make this series
suitable for many high-end medical applications
such as MRI and CAT scan equipment. For
military applications, the new series is capable of
meeting all the requirements of MIL-STD-750
including HTRB screening at 80% of rated
voltage at 150 OC.
IMPORTANT: Forthemostcurrentdata,consultMICROSEMI’s website: http://www.microsemi.com
Package
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Condition
PD θ
A
B&E
C
D
SM
25 OC Pin Temperature
½ in. total length to 25 OC Contact
Free Air
25 OC Stud Temperature
25 OC Stud Temperature
25 OC End Cap Temperature
10 W 15 OC/W
5.5 W 27.5 OC/W
1.5 W
10 W 15 OC/W
7.5 W 20 OC/W
7.5 W 20 OC/W
All 1 us pulse (Single)
OPERATING AND STORAGE
TEMPERATURE RANGE
35 kW
-65 OC to + 175 OC
KEY FEATURES
ƒ Voltage Ratings to 1400 Volt
ƒ Fully Passivated PIN Chip
ƒ Low Leakage, IR < 0.5 µA
ƒ Void Less, Particle Free Construction
ƒ Hermetic Fused in Glass
ƒ Low Loss, Low Distortion
ƒ Surface Mount Package Available
ƒ Metallurgically Bonded, Thermally
Matched Construction
ƒ Compatible with automatic insertion
equipment
APPLICATIONS/BENEFITS
ƒ Isolated stud package available
ƒ Surface mount package available
ƒ RoHS compliant packaging
available: use UMX7501B, etc.
VOLTAGE RATINGS
Reverse Voltage @ 0.5 uA
100V
200V
400V
600V
800V
1000V
1200V
1400V
UM7501
UM7502
UM7504
UM7506
UM7508
UM7510
UM7512
UM7514
Copyright 2005
Rev. 0, 2005-11-03
Microsemi
Page 1

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UM7500
POWER PIN DIODES
ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified)
Parameter
Total Capacitance
Series Resistance
Parallel Resistance
Parallel Resistance
Carrier Lifetime
Reverse Current
I-Region Width
Symbol
CT
RS
Rp
Rp
τ
IR
W
Conditions
VR=100V, F= 1 MHz
If = 50 mA, F= 100 MHz
VR = 100 V, F = 100 MHz
VR = 0 V, F = 100 MHz
IF = 10 mA
VR = Voltage rating
-
MIN.
100k
10k
2.5
TYPICAL
0.8
0.8
150k
15k
3.5
0.1
100
Forward Voltage
VF IF= 50 mA
Forward Bias Harmonic Distortion (R2a/a,R3a/a) 100 MHz, P=30W, IF=50mA
80
0.8
90
Reverse Bias Harmonic Distortion (R2a/a,R3a/a) 100 MHz, P=0dBm,VR=0V
60
70
MAX.
1.0
1.0
0.5
1.0
Units
pF
Ohms
Ohms
Ohms
µs
µA
µm
dBc
dBc
Style “B”
Style “SM”
UM7500
TYPICAL
103
F = 100 MHz
102
101
100
10-1
10-5 10-4 10-3 10-2 10-1 100
If (A)
101
Copyright 2005
Rev. 0, 2005-11-03
Microsemi
Page 2

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Copyright 2005
Rev. 0, 2005-11-03
UM7500
POWER PIN DIODES
UM7500
TYPICAL
100
10-1
10-2
10-3
10-4
10-5
10-6
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Vf (V)
103
102
101
100
100
UM7500
TYPICAL
100 MHz
500 MHz
1 GHz
101
Vr (V)
102
Microsemi
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UM7500
POWER PIN DIODES
UM7500
TYPICAL
12
11
10 "C" PACKAGE
9
8 "D" PACKAGE
7
6
5
4
3
2
1
0
0 25 50 75 100 125 150 175
STUD TEMPERATURE ( oC)
Copyright 2005
Rev. 0, 2005-11-03
Microsemi
Page 4

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102
o
101
UM7500
POWER PIN DIODES
UM7500
TYPICAL
DC
100
100
101 102
PULSE WIDTH (SECONDS)
103
3.5
3.0
2.5
2.0
f = 1 MHz
1.5
1.0
f = 100 MHz
0.5
0.0
1
UM7500
TYPICAL
10 100
Vr (Volts)
1000
Copyright 2005
Rev. 0, 2005-11-03
Microsemi
Page 5