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BZX84-Series
Vishay Semiconductors
Small Signal Zener Diodes
3
12
20421
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom.
Test current IZT
VZ specification
Int. construction
2.4 to 75
2; 5
Pulse current
Single
UNIT
V
mA
FEATURES
• Silicon planar Zener diodes
Available
• The Zener voltages are graded according to the
international E24 standard. Standard Zener
voltage tolerance is ± 5 %, indicated by the “C”
in the ordering code. Replace “C” with “B” for
± 2 % tolerance.
• AEC-Q101 qualified available
• ESD capability acc. to AEC-Q101:
human body model: > 8 kV,
machine model: > 800 V
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
BZX84C2V4-E3-08 to BZX84C75-E3-08
BZX84B2V4-E3-08 to BZX84B75-E3-08
BZX84C2V4-HE3-08 to BZX84C75-HE3-08
BZX84-series
BZX84B2V4-HE3-08 to BZX84B75-HE3-08
BZX84C2V4-E3-18 to BZX84C75-E3-18
BZX84B2V4-E3-18 to BZX84B75-E3-18
BZX84C2V4-HE3-18 to BZX84C75-HE3-18
BZX84B2V4-HE3-18 to BZX84B75-HE3-18
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
3000 (8 mm tape on 7" reel)
15 000
10 000 (8 mm tape on 13" reel)
10 000
PACKAGE
PACKAGE NAME
SOT-23
WEIGHT
8.8 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Power dissipation
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Operating temperature range
Tamb = 25 °C, device on fiberglass substrate,
acc. layout on page 7
Tamb = 25 °C, device on fiberglass substrate,
acc. layout on page 7
SYMBOL
Ptot
RthJA
Tj
Tstg
Top
VALUE
300
420
150
-65 to +150
-55 to +150
UNIT
mW
K/W
°C
°C
°C
Rev. 2.1, 08-Nov-16
1 Document Number: 85763
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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BZX84-Series
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART
NUMBER
MARKING
CODE
ZENER VOLTAGE
RANGE
VZ at IZT1
TEST CURRENT
IZT1
IZT2
REVERSE
LEAKAGE
CURRENT
IR at VR
DYNAMIC
RESISTANCE
f = 1 kHz
ZZ at IZT1 ZZK at IZT2
V
mA μA V
MIN. NOM. MAX.
MAX.
MAX.
BZX84C2V4
Z11
2.2 2.4 2.6
5
1 50 1 100
275
BZX84C2V7
Z12
2.5 2.7 2.9
5
1 20 1 100
600
BZX84C3V0
Z13
2.8 3.0 3.2
5
1 10 1
95
600
BZX84C3V3
Z14
3.1 3.3 3.5
5
1
5
1
95
600
BZX84C3V6
Z15
3.4 3.6 3.8
5
1
5
1
90
600
BZX84C3V9
Z16
3.7 3.9 4.1
5
1
3
1
90
600
BZX84C4V3
Z17
4.0 4.3 4.6
5
1
3
1
90
600
BZX84C4V7
Z1
4.4 4.7 5.0
5
1
3
2
80
500
BZX84C5V1
Z2
4.8 5.1 5.4
5
1
2
2
60
480
BZX84C5V6
Z3
5.2 5.6 6.0
5
1
1
2
40
400
BZX84C6V2
Z4
5.8 6.2 6.6
5
1
3
4
10
150
BZX84C6V8
Z5
6.4 6.8 7.2
5
1
2
4
15
80
BZX84C7V5
Z6
7.0 7.5 7.9
5
1
1
5
15
80
BZX84C8V2
Z7
7.7 8.2 8.7
5
1 0.7 5
15
80
BZX84C9V1
Z8
8.5 9.1 9.6
5
1 0.5 6
15
100
BZX84C10
Z9 9.4 10 10.6 5 1 0.2 7 20
150
BZX84C11
Y1
10.4 11 11.6
5
1 0.1 8
20
150
BZX84C12
Y2
11.4 12 12.7
5
1 0.1 8
25
150
BZX84C13
Y3
12.4 13 14.1
5
1 0.1 8
30
170
BZX84C15
Y4
13.8 15 15.6
5
1 0.05 10.5 30
200
BZX84C16
Y5
15.3 16 17.1
5
1 0.05 11.2 40
200
BZX84C18
Y6
16.8 18 19.1
5
1 0.05 12.6 45
225
BZX84C20
Y7
18.8 20 21.2
5
1 0.05 14.0 55
225
BZX84C22
Y8
20.8 22 23.3
5
1 0.05 15.4 55
250
BZX84C24
Y9
22.8 24 25.6
5
1 0.05 16.8 70
250
BZX84C27
Y10
25.1 27 28.9
2
0.5 0.05 18.9
80
300
BZX84C30
Y11
28 30 32
2
0.5 0.05 21.0
80
300
BZX84C33
Y12
31 33 35
2
0.5 0.05 23.1
80
325
BZX84C36
Y13
34 36 38
2
0.5 0.05 25.2
90
350
BZX84C39
Y14
37 39 41
2
0.5 0.05 27.3
130
350
BZX84C43
Y15
40 43 46
2
0.5 0.05 30.1
150
375
BZX84C47
Y16
44 47 50
2
0.5 0.05 32.9
170
375
BZX84C51
Y17
48 51 54
2
0.5 0.05 35.7
180
400
BZX84C56
Y18
52 56 60
2
0.5 0.05 39.2
200
425
BZX84C62
Y19
58 62 66
2
0.5 0.05 43.4
215
450
BZX84C68
Y20
64 68 72
2
0.5 0.05 47.6
240
475
BZX84C75
Y21
70 75 79
2
0.5 0.05 52.5
255
500
TEMPERATURE
COEFFICIENT
VZ at IZT1
10-4/°C
MIN. MAX.
-9 -4
-9 -4
-9 -3
-8 -3
-8 -3
-7 -3
-6 -1
-5 2
-3 4
-2 6
-1 7
27
37
47
58
58
59
69
79
79
8 9.5
8 9.5
8 10
8 10
8 10
8 10
8 10
8 10
8 10
10 12
10 12
10 12
10 12
9 11
9 12
10 12
10 12
Rev. 2.1, 08-Nov-16
2 Document Number: 85763
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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BZX84-Series
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART
NUMBER
MARKING
CODE
ZENER VOLTAGE
RANGE
VZ at IZT1
TEST CURRENT
IZT1
IZT2
REVERSE
LEAKAGE
CURRENT
IR at VR
DYNAMIC
RESISTANCE
f = 1 kHz
ZZ at IZT1 ZZK at IZT2
V
mA μA V
MIN. NOM. MAX.
MAX.
MAX.
BZX84B2V4
Z50
2.35 2.4 2.45
5
1 50 1 100
275
BZX84B2V7
Z51
2.65 2.7 2.75
5
1 20 1 100
600
BZX84B3V0
Z52
2.94 3.0 3.06
5
1 10 1
95
600
BZX84B3V3
Z53
3.23 3.3 3.37
5
1
5
1
95
600
BZX84B3V6
Z54
3.53 3.6 3.67
5
1
5
1
90
600
BZX84B3V9
Z55
3.82 3.9 3.98
5
1
3
1
90
600
BZX84B4V3
Z56
4.21 4.3 4.39
5
1
3
1
90
600
BZX84B4V7
Z57
4.61 4.7 4.79
5
1
3
2
80
500
BZX84B5V1
Z58
5.0 5.1 5.2
5
1
2
2
60
480
BZX84B5V6
Z59
5.49 5.6 5.71
5
1
1
2
40
400
BZX84B6V2
Z60
6.08 6.2 6.32
5
1
3
4
10
150
BZX84B6V8
Z61
6.66 6.8 6.94
5
1
2
4
15
80
BZX84B7V5
Z62
7.35 7.5 7.65
5
1
1
5
15
80
BZX84B8V2
Z63
8.04 8.2 8.36
5
1 0.7 5
15
80
BZX84B9V1
Z64
8.92 9.1 9.28
5
1 0.5 6
15
100
BZX84B10
Z65 9.8 10 10.2 5
1 0.2 7
20
150
BZX84B11
Z66
10.8 11 11.2
5
1 0.1 8
20
150
BZX84B12
Z67
11.8 12 12.2
5
1 0.1 8
25
150
BZX84B13
Z68
12.7 13 13.3
5
1 0.1 8
30
170
BZX84B15
Z69
14.7 15 15.3
5
1 0.05 10.5 30
200
BZX84B16
Z70
15.7 16 16.3
5
1 0.05 11.2 40
200
BZX84B18
Z71
17.6 18 18.4
5
1 0.05 12.6 45
225
BZX84B20
Z72
19.6 20 20.4
5
1 0.05 14
55
225
BZX84B22
Z73
21.6 22 22.4
5
1 0.05 15.4 55
250
BZX84B24
Z74
23.5 24 24.5
5
1 0.05 16.8 70
250
BZX84B27
Z75
26.5 27 27.5
2
0.5 0.05 18.9
80
300
BZX84B30
Z76
29.4 30 30.6
2
0.5 0.05 21
80
300
BZX84B33
Z77
32.3 33 33.7
2
0.5 0.05 23.1
80
325
BZX84B36
Z78
35.3 36 36.7
2
0.5 0.05 25.2
90
350
BZX84B39
Z79
38.2 39 39.8
2
0.5 0.05 27.3
130
350
BZX84B43
Z80
42.1 43 43.9
2
0.5 0.05 30.1
150
375
BZX84B47
Z81
46.1 47 47.9
2
0.5 0.05 32.9
170
375
BZX84B51
Z82
50 51 52
2
0.5 0.05 35.7
180
400
BZX84B56
Z83
54.9 56 57.1
2
0.5 0.05 39.2
200
425
BZX84B62
Z84
60.8 62 63.2
2
0.5 0.05 43.4
215
450
BZX84B68
Z85
66.6 68 69.4
2
0.5 0.05 47.6
240
475
BZX84B75
Z86
73.5 75 76.5
2
0.5 0.05 52.5
255
500
TEMPERATURE
COEFFICIENT
VZ at IZT1
10-4/°C
MIN. MAX.
-9 -4
-9 -4
-9 -3
-8 -3
-8 -3
-7 -3
-6 -1
-5 2
-3 4
-2 6
-1 7
27
37
47
58
58
59
69
79
79
8 9.5
8 9.5
8 10
8 10
8 10
8 10
8 10
8 10
8 10
10 12
10 12
10 12
10 12
9 11
9 12
10 12
10 12
Rev. 2.1, 08-Nov-16
3 Document Number: 85763
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
BZX84-Series
Vishay Semiconductors
mA
103
102
IF 10
1
TJ = 100 °C
10-1
TJ = 25 °C
10-2
10-3
10-4
10-5
0
18114
0.2 0.4 0.6 0.8
VF
Fig. 1 - Forward Characteristics
1V
Ω
100
5
4
rzj
3
2
10
TJ = 25 °C
33
27
22
18
5 15
4
12
3
10
2
6.8/8.2
1
0.1
18119
2
51 2
5 10 2
IZ
6.2
5 100 mA
Fig. 4 - Dynamic Resistance vs. Zener Current
mW
500
400
Ptot
300
200
100
0
0
18115
100
Tamb
200 °C
Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature
Ω
103
7
5
4
Rzj 3
2
47 + 51
43
39
36
102
7
5
4
3
2
Tj = 25 °C
10
0.1
18120
2 3 45
1 2 3 4 5 10
I mA
Z
Fig. 5 - Dynamic Resistance vs. Zener Current
Ω
1000
5
4
3
rzj 2
100
5
4
3
2
TJ = 25 °C
10
5
4
3
2
1
0.1 2
18117
51 2
5 10 2
IZ
2.7
3.6
4.7
5.1
5.6
5 100 mA
Fig. 3 - Dynamic Resistance vs. Zener Current
Ω
103
Rzth
5
4
3
2
102
5
4
3
2
Rzth
=
RthA
x
VZ
x
ΔVZ
ΔTj
10
5
4
3 negative
2
1
1
18121
2 3 45
positive
10 2 3 4 5 100 V
VZ at IZ = 5 mA
Fig. 6 - Thermal Differential Resistance vs. Zener Voltage
Rev. 2.1, 08-Nov-16
4 Document Number: 85763
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Ω
100
7
5
4
Rzj 3
2
10
7
5
4
3
2
1
1
18122
2 3 45
TI j
=
=
25 °C
5 mA
Z
10 2 3 4 5 100 V
VZ
Fig. 7 - Dynamic Resistance vs. Zener Voltage
mV/°C
25
20
ΔVZ
ΔTj 15
10
5 mA
IZ = 1 mA
20 mA
5
0
-5
1
18123
2 3 45
10 2 3 4 5 100 V
VZ
Fig. 8 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
V
0.8
0.7
0.6
ΔVZ 0.5
0.4
0.3
0.2
0.1
V at I = 5 mA
ZZ
25 15
10
8
7
6.2
5.9
5.6
0
-1
- 0.2
0
18124
5.1
3.6 4.7
20 40 60 80 100 120 140 C
Tj
Fig. 9 - Change of Zener Voltage vs. Junction Temperature
BZX84-Series
Vishay Semiconductors
mV/°C
100
ΔVZ 80
ΔTj
60
IZ = 5 mA
40
20
0
0
18125
20 40 60
80 100 V
VZ
Fig. 10 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
V
9
8
7
ΔVZ
6
5
4
3
51
43
36
2
1
0
-1
0
18126
20 40
IZ = 2 mA
60 80 100 120 140 °C
Tj
Fig. 11 - Change of Zener Voltage vs. Junction Temperature
V
1.6
1.4 ΔVZ = Rzth x IZ
1.2
ΔVZ 1
0.8
0.6
0.4
0.2
0
- 0.2
- 0.4
18127 1
2 3 45
10 2 3 4 5 100 V
VZ at IZ = 5 mA
Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
Rev. 2.1, 08-Nov-16
5 Document Number: 85763
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000