BZX84C3V9-G.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 BZX84C3V9-G 데이타시트 다운로드

No Preview Available !

www.vishay.com
BZX84-G-Series
Vishay Semiconductors
Small Signal Zener Diodes
3
12
20421
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom.
Test current IZT
VZ specification
Int. construction
2.4 to 75
2; 5
Pulse current
Single
UNIT
V
mA
FEATURES
• Silicon planar Zener diodes
• The Zener voltages are graded according to the
international E24 standard. Standard Zener
voltage tolerance is ± 5 %, indicated by the “C”
in the ordering code. Replace “C” with “B” for
± 2 % tolerance.
• AEC-Q101 qualified
• ESD capability acc. to AEC-Q101:
human body model: > 8 kV,
machine model: > 800 V
• Base P/N-G3 - green, commercial grade
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
BZX84-G-series
BZX84C2V4-G3-08 to BZX84C75-G3-08
BZX84B2V4-G3-08 to BZX84B75-G3-08
BZX84C2V4-G3-18 to BZX84C75-G3-18
BZX84B2V4-G3-18 to BZX84B75-G3-18
TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
3000 (8 mm tape on 7" reel)
15 000
10 000 (8 mm tape on 13" reel)
10 000
PACKAGE
PACKAGE NAME
SOT-23
WEIGHT
8.1 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Power dissipation
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Operating temperature range
Tamb = 25 °C, device on fiberglass substrate,
acc. layout on page 7
Tamb = 25 °C, device on fiberglass substrate,
acc. layout on page 7
SYMBOL
Ptot
RthJA
Tj
Tstg
Top
VALUE
300
420
150
- 65 to + 150
- 55 to + 150
UNIT
mW
K/W
°C
°C
°C
Rev. 1.2, 28-Feb-13
1 Document Number: 83458
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

No Preview Available !

www.vishay.com
BZX84-G-Series
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
TEST CURRENT
REVERSE
LEAKAGE
CURRENT
DYNAMIC
RESISTANCE
PART NUMBER
MARKING
CODE
VZ at IZT1
IZT1
IZT2
IR at VR
ZZ at IZT1
ZZK at
IZT2
V
mA μA V
MIN. NOM. MAX.
MAX.
MAX.
BZX84C2V4-G
G50
2.2 2.4 2.6
5
1 50 1 100 275
BZX84C2V7-G
G51
2.5 2.7 2.9
5
1 20 1 100 600
BZX84C3V0-G
G52
2.8 3.0 3.2
5
1 10 1
95
600
BZX84C3V3-G
G53
3.1 3.3 3.5
5
1
51
95
600
BZX84C3V6-G
G54
3.4 3.6 3.8
5
1
51
90
600
BZX84C3V9-G
G55
3.7 3.9 4.1
5
1
31
90
600
BZX84C4V3-G
G56
4.0 4.3 4.6
5
1
31
90
600
BZX84C4V7-G
G57
4.4 4.7 5.0
5
1
32
80
500
BZX84C5V1-G
G58
4.8 5.1 5.4
5
1
22
60
480
BZX84C5V6-G
G59
5.2 5.6 6.0
5
1
12
40
400
BZX84C6V2-G
G60
5.8 6.2 6.6
5
1
34
10
150
BZX84C6V8-G
G61
6.4 6.8 7.2
5
1
2
4
15
80
BZX84C7V5-G
G62
7.0 7.5 7.9
5
1
1
5
15
80
BZX84C8V2-G
G63
7.7 8.2 8.7
5
1 0.7 5
15
80
BZX84C9V1-G
G64
8.5 9.1 9.6
5
1 0.5 6
15
100
BZX84C10-G
G65 9.4 10 10.6 5 1 0.2 7 20 150
BZX84C11-G
G66
10.4 11 11.6
5
1 0.1 8
20 150
BZX84C12-G
G67
11.4 12 12.7
5
1 0.1 8
25 150
BZX84C13-G
G68
12.4 13 14.1
5
1 0.1 8
30 170
BZX84C15-G
G69
13.8 15 15.6
5
1 0.05 10.5 30
200
BZX84C16-G
G70
15.3 16 17.1
5
1 0.05 11.2 40
200
BZX84C18-G
G71
16.8 18 19.1
5
1 0.05 12.6 45
225
BZX84C20-G
G72
18.8 20 21.2
5
1 0.05 14.0 55
225
BZX84C22-G
G73
20.8 22 23.3
5
1 0.05 15.4 55
250
BZX84C24-G
G74
22.8 24 25.6
5
1 0.05 16.8 70
250
BZX84C27-G
G75
25.1 27 28.9
2
0.5 0.05 18.9
80
300
BZX84C30-G
G76
28 30 32
2
0.5 0.05 21.0
80
300
BZX84C33-G
G77
31 33 35
2
0.5 0.05 23.1
80
325
BZX84C36-G
G78
34 36 38
2
0.5 0.05 25.2
90
350
BZX84C39-G
G79
37 39 41
2
0.5 0.05 27.3
130
350
BZX84C43-G
G80
40 43 46
2
0.5 0.05 30.1
150
375
BZX84C47-G
G81
44 47 50
2
0.5 0.05 32.9
170
375
BZX84C51-G
G82
48 51 54
2
0.5 0.05 35.7
180
400
BZX84C56-G
G83
52 56 60
2
0.5 0.05 39.2
200
425
BZX84C62-G
G84
58 62 66
2
0.5 0.05 43.4
215
450
BZX84C68-G
G85
64 68 72
2
0.5 0.05 47.6
240
475
BZX84C75-G
G86
70 75 79
2
0.5 0.05 52.5
255
500
TEMPERATURE
COEFFICIENT
VZ at IZT1
10-4/°C
MIN. MAX.
-9 -4
-9 -4
-9 -3
-8 -3
-8 -3
-7 -3
-6 -1
-5 2
-3 4
-2 6
-1 7
27
37
47
58
58
59
69
79
79
8 9.5
8 9.5
8 10
8 10
8 10
8 10
8 10
8 10
8 10
10 12
10 12
10 12
10 12
9 11
9 12
10 12
10 12
Rev. 1.2, 28-Feb-13
2 Document Number: 83458
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

No Preview Available !

www.vishay.com
BZX84-G-Series
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
TEST CURRENT
REVERSE
LEAKAGE
CURRENT
DYNAMIC
RESISTANCE
PART NUMBER
MARKING
CODE
VZ at IZT1
IZT1
IZT2
IR at VR
ZZ at IZT1
ZZK at
IZT2
V
mA μA V
MIN. NOM. MAX.
MAX.
MAX.
BZX84B2V4-G
H50
2.35 2.4 2.45
5
1 50 1 100 275
BZX84B2V7-G
H51
2.65 2.7 2.75
5
1 20 1 100 600
BZX84B3V0-G
H52
2.94 3.0 3.06
5
1 10 1
95
600
BZX84B3V3-G
H53
3.23 3.3 3.37
5
1
51
95
600
BZX84B3V6-G
H54
3.53 3.6 3.67
5
1
51
90
600
BZX84B3V9-G
H55
3.82 3.9 3.98
5
1
31
90
600
BZX84B4V3-G
H56
4.21 4.3 4.39
5
1
31
90
600
BZX84B4V7-G
H57
4.61 4.7 4.79
5
1
32
80
500
BZX84B5V1-G
H58
5.0 5.1 5.2
5
1
22
60
480
BZX84B5V6-G
H59
5.49 5.6 5.71
5
1
12
40
400
BZX84B6V2-G
H60
6.08 6.2 6.32
5
1
34
10
150
BZX84B6V8-G
H61
6.66 6.8 6.94
5
1
2
4
15
80
BZX84B7V5-G
H62
7.35 7.5 7.65
5
1
1
5
15
80
BZX84B8V2-G
H63
8.04 8.2 8.36
5
1 0.7 5
15
80
BZX84B9V1-G
H64
8.92 9.1 9.28
5
1 0.5 6
15
100
BZX84B10-G
H65 9.8 10 10.2 5 1 0.2 7 20 150
BZX84B11-G
H66
10.8 11 11.2
5
1 0.1 8
20
150
BZX84B12-G
H67
11.8 12 12.2
5
1 0.1 8
25
150
BZX84B13-G
H68
12.7 13 13.3
5
1 0.1 8
30
170
BZX84B15-G
H69
14.7 15 15.3
5
1 0.05 10.5 30
200
BZX84B16-G
H70
15.7 16 16.3
5
1 0.05 11.2 40
200
BZX84B18-G
H71
17.6 18 18.4
5
1 0.05 12.6 45
225
BZX84B20-G
H72
19.6 20 20.4
5
1 0.05 14
55
225
BZX84B22-G
H73
21.6 22 22.4
5
1 0.05 15.4 55
250
BZX84B24-G
H74
23.5 24 24.5
5
1 0.05 16.8 70
250
BZX84B27-G
H75
26.5 27 27.5
2
0.5 0.05 18.9
80
300
BZX84B30-G
H76
29.4 30 30.6
2
0.5 0.05 21
80
300
BZX84B33-G
H77
32.3 33 33.7
2
0.5 0.05 23.1
80
325
BZX84B36-G
H78
35.3 36 36.7
2
0.5 0.05 25.2
90
350
BZX84B39-G
H79
38.2 39 39.8
2
0.5 0.05 27.3
130
350
BZX84B43-G
H80
42.1 43 43.9
2
0.5 0.05 30.1
150
375
BZX84B47-G
H81
46.1 47 47.9
2
0.5 0.05 32.9
170
375
BZX84B51-G
H82
50 51 52
2
0.5 0.05 35.7
180
400
BZX84B56-G
H83
54.9 56 57.1
2
0.5 0.05 39.2
200
425
BZX84B62-G
H84
60.8 62 63.2
2
0.5 0.05 43.4
215
450
BZX84B68-G
H85
66.6 68 69.4
2
0.5 0.05 47.6
240
475
BZX84B75-G
H86
73.5 75 76.5
2
0.5 0.05 52.5
255
500
TEMPERATURE
COEFFICIENT
VZ at IZT1
10-4/°C
MIN. MAX.
-9 -4
-9 -4
-9 -3
-8 -3
-8 -3
-7 -3
-6 -1
-5 2
-3 4
-2 6
-1 7
27
37
47
58
58
59
69
79
79
8 9.5
8 9.5
8 10
8 10
8 10
8 10
8 10
8 10
8 10
10 12
10 12
10 12
10 12
9 11
9 12
10 12
10 12
Rev. 1.2, 28-Feb-13
3 Document Number: 83458
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

No Preview Available !

www.vishay.com
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
BZX84-G-Series
Vishay Semiconductors
mA
103
102
IF 10
1
TJ = 100 °C
10-1
TJ = 25 °C
10-2
10-3
10-4
10-5
0
18114
0.2 0.4 0.6 0.8
VF
Fig. 1 - Forward Characteristics
1V
mW
500
400
Ptot
300
200
100
0
0
18115
100
Tamb
200 °C
Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature
Ω
100
5
4
rzj
3
2
10
TJ = 25 °C
33
27
22
18
5 15
4
12
3
10
2 6.8/8.2
1
0.1
18119
2
51 2
5 10 2
IZ
6.2
5 100 mA
Fig. 4 - Dynamic Resistance vs. Zener Current
Ω
103
7
5
4
Rzj 3
2
47 + 51
43
39
36
102
7
5
4
3
2
Tj = 25 °C
10
0.1
18120
2 3 45
1 2 3 4 5 10
IZ mA
Fig. 5 - Dynamic Resistance vs. Zener Current
Ω
1000
5
4
3
rzj 2
100
5
4
3
2
TJ = 25 °C
10
5
4
3
2
1
0.1 2
18117
51 2
5 10 2
IZ
2.7
3.6
4.7
5.1
5.6
5 100 mA
Fig. 3 - Dynamic Resistance vs. Zener Current
Ω
103
Rzth
5
4
3
2
102
5
4
3
2
Rzth
=
RthA
x
VZ
x
Δ
V
Z
ΔTj
10
5
4
3 negative
2
1
1
18121
2 3 45
positive
10 2 3 4 5 100 V
VZ at IZ = 5 mA
Fig. 6 - Thermal Differential Resistance vs. Zener Voltage
Rev. 1.2, 28-Feb-13
4 Document Number: 83458
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

No Preview Available !

www.vishay.com
Ω
100
7
5
4
Rzj 3
2
10
7
5
4
3
2
1
1
18122
2 3 45
TI j
=
=
25 °C
5 mA
Z
10 2 3 4 5 100 V
VZ
Fig. 7 - Dynamic Resistance vs. Zener Voltage
mV/°C
25
20
ΔVZ
ΔTj 15
10
5 mA
IZ = 1 mA
20 mA
5
0
-5
1
18123
2 3 45
10 2 3 4 5 100 V
VZ
Fig. 8 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
V
0.8
0.7
0.6
ΔVZ 0.5
0.4
0.3
0.2
0.1
V at I = 5 mA
ZZ
25 15
10
8
7
6.2
5.9
5.6
0
-1
- 0.2
0
18124
5.1
3.6 4.7
20 40 60 80 100 120 140 C
Tj
Fig. 9 - Change of Zener Voltage vs. Junction Temperature
BZX84-G-Series
Vishay Semiconductors
mV/°C
100
ΔVZ 80
ΔTj
60
IZ = 5 mA
40
20
0
0
18125
20 40 60
80 100 V
VZ
Fig. 10 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
ΔVZ
V
9
8
7
6
5
4
3
2
1
51
43
36
0
-1
0
18126
20 40
IZ = 2 mA
60 80 100 120 140 °C
Tj
Fig. 11 - Change of Zener Voltage vs. Junction Temperature
V
1.6
1.4 ΔVZ = Rzth x IZ
1.2
ΔVZ 1
0.8
0.6
0.4
0.2
0
- 0.2
- 0.4
18127 1
2 3 45
10 2 3 4 5 100 V
VZ at IZ = 5 mA
Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
Rev. 1.2, 28-Feb-13
5 Document Number: 83458
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000