B1022.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 B1022 데이타시트 다운로드

No Preview Available !

SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low saturation voltage
·Complement to type 2SD1417
APPLICATIONS
·High power switching applications
·Hammer drive,pulse motor drive applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Product Specification
2SB1022
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector -emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
-60
-60
-5
-7
-0.2
2.0
30
150
-55~150
UNIT
V
V
V
A
A
W

No Preview Available !

SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SB1022
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=-3A ;IB=-6mA
VCEsat-2 Collector-emitter saturation voltage IC=-7A ;IB=-14mA
VBEsat Base-emitter saturation voltage
IC=-3A ;IB=-6mA
ICBO Collector cut-off current
VCB=-60V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-3A ; VCE=-3V
hFE-2
DC current gain
IC=-7A ; VCE=-3V
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IB1=-IB2=-6mA; VCC>-45V
RL=15?
MIN TYP. MAX UNIT
-60 V
-1.5 V
-2.0 V
-2.5 V
-100
µA
-4.0 mA
2000
15000
1000
0.8 µs
2.0 µs
2.5 µs
2

No Preview Available !

SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB1022
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3