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High Speed Silicon PIN Photodiode
BPV10NF
Vishay Telefunken
Description
BPV10NF is a high sensitive and wide bandwidth PIN
photodiode in a standard T–1¾ plastic package. The
black epoxy is an universal IR filter, spectrally matched
to GaAs (l=950nm) and GaAlAs (l=870nm) IR emit-
ters. BPV10NF is optimized for serial infrared links
according to the IrDA standard.
94 8390
Features
D Extra fast response times
D High modulation bandwidth (>100 MHz)
D High radiant sensitivity
D Radiant sensitive area A=0.78mm2
D Low junction capacitance
D Standard T–1¾ (ø 5 mm) package with universal
IR filter
D Angle of half sensitivity ϕ = ± 20°
Applications
Infrared high speed remote control and free air transmission systems with high modulation frequencies or
high data transmission rate requirements , especially for direct point to point links.
BPV10NF is ideal for the design of transmission systems according to IrDA requirements and for carrier
frequency based systems (e.g. ASK / FSK– coded, 450 kHz or 1.3 MHz). Recommended emitter diodes are
TSHF 5...–series or TSSF 4500.
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
xTamb 25 °C
x2 mm from body, t 5 s
Symbol
VR
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
60
215
100
–55...+100
–55...+100
260
350
Unit
V
mW
°C
°C
°C
°C
K/W
Document Number 81503
Rev. 2, 20-May-99
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BPV10NF
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Test Conditions
Symbol Min Typ Max Unit
Forward Voltage
Breakdown Voltage
mIF = 50 mA
IR = 100 A, E = 0
Reverse Dark Current
Diode Capacitance
Open Circuit Voltage
Short Circuit Current
Reverse Light Current
Temp. Coefficient of Ira
Absolute Spectral Sensitivity
Angle of Half Sensitivity
VR = 20 V, E = 0
VR = 0 V, f = 1 MHz, E = 0
lEe = 1 mW/cm2, = 870 nm
lEe = 1 mW/cm2, = 870 nm
lEe = 1 mW/cm2, = 870 nm,
lVR = 5 V
Ee = 1 mW/cm2, = 950 nm,
lVR = 5 V
Ee = 1 mW/cm2, = 870 nm,
lVR = 5 V
VR = 5 V, = 870 nm
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Quantum Efficiency
Noise Equivalent Power
Detectivity
l = 950 nm
lVR=20 V, =950 nm
lVR=20 V, =950 nm
Rise Time
Fall Time
WVR=50 V, RL=50 ,
l=820 nm
WVR=50 V, RL=50 ,
l=820 nm
VF
V(BR)
Iro
CD
Vo
Ik
Ira
Ira
TKIra
s(l)
ϕ
ll0hp.5
NEP
D*
tr
tf
1 1.3 V
60 V
1 5 nA
11 pF
450 mV
50 mA
55 mA
30 60
mA
–0.1 %/K
0.55
±20
940
790...1050
70
3x10–14
3x1012
2.5
A/W
deg
nm
nm
%
W/Hz
cmHz/
W
ns
2.5 ns
Typical Characteristics (Tamb = 25_C unless otherwise specified)
1000
1.4
100
10
1
20
94 8436
VR=20V
40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 1. Reverse Dark Current vs. Ambient Temperature
1.2
1.0
l0.8
VR=5V
Ee=1mW/cm2
=870nm
0.6
0
94 8621
20 40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
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Document Number 81503
Rev. 2, 20-May-99

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1000
100
10
VR=5V
1 l=870nm
0.1
0.01
94 8622
0.1 1
Ee – Irradiance ( mW / cm2 )
10
Figure 3. Reverse Light Current vs. Irradiance
100
1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
10
0.1 mW/cm2
0.05 mW/cm2
l=870nm
0.02 mW/cm2
1
0.1 1
10 100
94 8623
VR – Reverse Voltage ( V )
Figure 4. Reverse Light Current vs. Reverse Voltage
12
10
8 E=0
f=1MHz
6
4
2
0
0.1 1
10 100
94 8439
VR – Reverse Voltage ( V )
Figure 5. Diode Capacitance vs. Reverse Voltage
BPV10NF
Vishay Telefunken
1.2
1.0
0.8
0.6
0.4
0.2
0
750
94 8426
850 950 1050
l – Wavelength ( nm )
1150
Figure 6. Relative Spectral Sensitivity vs. Wavelength
0° 10 20
°°
30°
40°
1.0
0.9 50°
0.8 60°
0.7 70°
80°
0.6 0.4 0.2 0 0.2 0.4 0.6
94 8624
Figure 7. Relative Radiant Sensitivity vs.
Angular Displacement
Document Number 81503
Rev. 2, 20-May-99
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BPV10NF
Vishay Telefunken
Dimensions in mm
96 12198
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Document Number 81503
Rev. 2, 20-May-99

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Ozone Depleting Substances Policy Statement
BPV10NF
Vishay Telefunken
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 81503
Rev. 2, 20-May-99
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