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High Speed Silicon PIN Photodiode
BPV10NF
Vishay Telefunken
Description
BPV10NF is a high sensitive and wide bandwidth PIN
photodiode in a standard T–1¾ plastic package. The
black epoxy is an universal IR filter, spectrally matched
to GaAs (l=950nm) and GaAlAs (l=870nm) IR emit-
ters. BPV10NF is optimized for serial infrared links
according to the IrDA standard.
94 8390
Features
D Extra fast response times
D High modulation bandwidth (>100 MHz)
D High radiant sensitivity
D Radiant sensitive area A=0.78mm2
D Low junction capacitance
D Standard T–1¾ (ø 5 mm) package with universal
IR filter
D Angle of half sensitivity ϕ = ± 20°
Applications
Infrared high speed remote control and free air transmission systems with high modulation frequencies or
high data transmission rate requirements , especially for direct point to point links.
BPV10NF is ideal for the design of transmission systems according to IrDA requirements and for carrier
frequency based systems (e.g. ASK / FSK– coded, 450 kHz or 1.3 MHz). Recommended emitter diodes are
TSHF 5...–series or TSSF 4500.
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
xTamb 25 °C
x2 mm from body, t 5 s
Symbol
VR
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
60
215
100
–55...+100
–55...+100
260
350
Unit
V
mW
°C
°C
°C
°C
K/W
Document Number 81503
Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
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BPV10NF
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Test Conditions
Symbol Min Typ Max Unit
Forward Voltage
Breakdown Voltage
mIF = 50 mA
IR = 100 A, E = 0
Reverse Dark Current
Diode Capacitance
Open Circuit Voltage
Short Circuit Current
Reverse Light Current
Temp. Coefficient of Ira
Absolute Spectral Sensitivity
Angle of Half Sensitivity
VR = 20 V, E = 0
VR = 0 V, f = 1 MHz, E = 0
lEe = 1 mW/cm2, = 870 nm
lEe = 1 mW/cm2, = 870 nm
lEe = 1 mW/cm2, = 870 nm,
lVR = 5 V
Ee = 1 mW/cm2, = 950 nm,
lVR = 5 V
Ee = 1 mW/cm2, = 870 nm,
lVR = 5 V
VR = 5 V, = 870 nm
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Quantum Efficiency
Noise Equivalent Power
Detectivity
l = 950 nm
lVR=20 V, =950 nm
lVR=20 V, =950 nm
Rise Time
Fall Time
WVR=50 V, RL=50 ,
l=820 nm
WVR=50 V, RL=50 ,
l=820 nm
VF
V(BR)
Iro
CD
Vo
Ik
Ira
Ira
TKIra
s(l)
ϕ
ll0hp.5
NEP
D*
tr
tf
1 1.3 V
60 V
1 5 nA
11 pF
450 mV
50 mA
55 mA
30 60
mA
–0.1 %/K
0.55
±20
940
790...1050
70
3x10–14
3x1012
2.5
A/W
deg
nm
nm
%
W/Hz
cmHz/
W
ns
2.5 ns
Typical Characteristics (Tamb = 25_C unless otherwise specified)
1000
1.4
100
10
1
20
94 8436
VR=20V
40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 1. Reverse Dark Current vs. Ambient Temperature
1.2
1.0
l0.8
VR=5V
Ee=1mW/cm2
=870nm
0.6
0
94 8621
20 40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
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Document Number 81503
Rev. 2, 20-May-99

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1000
100
10
VR=5V
1 l=870nm
0.1
0.01
94 8622
0.1 1
Ee – Irradiance ( mW / cm2 )
10
Figure 3. Reverse Light Current vs. Irradiance
100
1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
10
0.1 mW/cm2
0.05 mW/cm2
l=870nm
0.02 mW/cm2
1
0.1 1
10 100
94 8623
VR – Reverse Voltage ( V )
Figure 4. Reverse Light Current vs. Reverse Voltage
12
10
8 E=0
f=1MHz
6
4
2
0
0.1 1
10 100
94 8439
VR – Reverse Voltage ( V )
Figure 5. Diode Capacitance vs. Reverse Voltage
BPV10NF
Vishay Telefunken
1.2
1.0
0.8
0.6
0.4
0.2
0
750
94 8426
850 950 1050
l – Wavelength ( nm )
1150
Figure 6. Relative Spectral Sensitivity vs. Wavelength
0° 10 20
°°
30°
40°
1.0
0.9 50°
0.8 60°
0.7 70°
80°
0.6 0.4 0.2 0 0.2 0.4 0.6
94 8624
Figure 7. Relative Radiant Sensitivity vs.
Angular Displacement
Document Number 81503
Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
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