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BPW17N
Vishay Semiconductors
Silicon NPN Phototransistor
94 8638-1
DESCRIPTION
BPW17N is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-3/4 plastic package with lens. It is
sensitive to visible and near infrared radiation. On PCB this
package size enables assembly of arrays with 2.54 mm
pitch.
FEATURES
• Package type: leaded
• Package form: T-¾
• Dimensions (in mm): Ø 1.8
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 12°
• Comliant to RoHS Directive 2002/95/EC and
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
in
APPLICATIONS
• Detector in electronic control and drive circuits
PRODUCT SUMMARY
COMPONENT
BPW17N
Ica (mA)
1.0
Note
• Test condition see table “Basic Characteristics”
ϕ (deg)
± 12
λ0.1 (nm)
450 to 1040
ORDERING INFORMATION
ORDERING CODE
BPW17N
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 5000 pcs, 5000 pcs/bulk
PACKAGE FORM
T-¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
tp/T = 0.5, tp 10 ms
Tamb 55 °C
t3s
Connected with Cu wire, 0.14 mm2
VCEO
VECO
IC
ICM
PV
Tj
Tamb
Tstg
Tsd
RthJA
VALUE
32
5
50
100
100
100
- 40 to + 100
- 40 to + 100
260
450
UNIT
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
Rev. 1.8, 23-Aug-11
1 Document Number: 81516
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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BPW17N
Vishay Semiconductors
125
100
75
RthJA = 450 K/W
50
25
0
0 20 40 60 80 100
94 8308
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Collector emitter breakdown voltage
Collector emitter dark current
Collector emitter capacitance
Collector light current
Angle of half sensitivity
IC = 1 mA
VCE = 20 V, E = 0
VCE = 5 V, f = 1 MHz, E = 0
Ee = 1 mW/cm2, λ = 950 nm,
VCE = 5 V
V(BR)CEO
ICEO
CCEO
Ica
ϕ
32
0.5
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Turn-on time
Turn-off time
Cut-off frequency
Ee = 1 mW/cm2, λ = 950 nm,
IC = 0.1 mA
VS = 5 V, IC = 5 mA, RL = 100 Ω
VS = 5 V, IC = 5 mA, RL = 100 Ω
VS = 5 V, IC = 5 mA, RL = 100 Ω
λp
λ0.1
VCEsat
ton
toff
fc
TYP.
1
8
1.0
± 12
825
450 to 1040
4.8
5.0
120
MAX.
200
0.3
UNIT
V
nA
pF
mA
deg
nm
nm
V
μs
μs
kHz
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
104
103
VCE = 20 V
102
101
100
20
94 8235
40 60 80
Tamb - Ambient Temperature (°C)
100
Fig. 1 - Collector Dark Current vs. Ambient Temperature
2.0
1.8
VCE = 5 V
1.6 Ee = 1 mW/cm2
λ = 950 nm
1.4
1.2
1.0
0.8
0.6
0
94 8239
20 40
60 80
Tamb - Ambient Temperature (°C)
100
Fig. 2 - Relative Collector Current vs. Ambient Temperature
Rev. 1.8, 23-Aug-11
2 Document Number: 81516
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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BPW17N
Vishay Semiconductors
10
1
0.1
0.01
VCE = 5 V
λ = 950 nm
0.001
0.01
94 8313
0.1 1
Ee - Irradiance (mW/cm2)
10
Fig. 3 - Collector Light Current vs. Irradiance
10
λ = 950 nm
1
Ee = 1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
0.1
0.1
94 8242
1 10 100
VCE - Collector Emitter Voltage (V)
Fig. 4 - Collector Light Current vs. Collector Emitter Voltage
20
f = 1 MHz
16
12
8
4
0
0.1
1
10 100
94 8240
VCE - Collector Emitter Voltage (V)
Fig. 5 - Collector Emitter Capacitance vs. Collector Emitter Voltage
12
10 VCE = 5 V
RL = 100 Ω
λ = 950 nm
8
6
4 toff
2 ton
0
0
94 8238
48
12
IC - Collector Current (mA)
16
Fig. 6 - Turn-on/Turn-off Time vs. Collector Current
1.0
0.8
0.6
0.4
0.2
0
400
94 8241
600 800 1000
λ - Wavelength (nm)
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
0° 10° 20°
30°
40°
1.0
0.9 50°
0.8 60°
0.7 70°
80°
0.6 0.4 0.2 0
94 8243
Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
Rev. 1.8, 23-Aug-11
3 Document Number: 81516
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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PACKAGE DIMENSIONS in millimeters
R 1.65
E
3.3 ± 0.15
C
Chip position
BPW17N
Vishay Semiconductors
1.8 ± 0.1
Area not plane
0.5
+ 0.2
- 0.1
2.54 nom.
6.544-5042.01-4
Issue:1; 01.07.96
96 12187
0.4 + 0.15
technical drawings
according to DIN
specifications
Rev. 1.8, 23-Aug-11
4 Document Number: 81516
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Revision: 08-Feb-17
1
Document Number: 91000