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Silicon NPN Phototransistor
Description
BPW17N is a silicon NPN epitaxial planar photo-
transistor in a miniature plastic case with a ± 12° lens.
With a lead center to center spacing of 2.54mm and a
package width of 2.4mm the devices are easily stack-
able on PC boards and assembled to arrays of
unlimited size.
Due to its waterclear epoxy the device is sensitive to
visible and near infrared radiation.
Features
D Miniature T–¾ clear plastic package with lens
D Narrow viewing angle ϕ = ± 12°
D Insensitive against background light due to nar-
row aperture
D Suitable for 0.1” (2.54 mm) center to center spac-
ing
D Suitable for visible and near infrared radiation
D Compatible with IR diode CQY37N
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
xtp/T = 0.5, tp 10 ms
xTamb 55 °C
xt 3 s
BPW17N
Vishay Telefunken
94 8639
Symbol
VCEO
VECO
IC
ICM
Ptot
Tj
Tstg
Tsd
RthJA
Value
32
5
50
100
100
100
–55...+100
260
450
Unit
V
V
mA
mA
mW
°C
°C
°C
K/W
Document Number 81516
Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
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BPW17N
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Test Conditions
Collector Emitter Breakdown IC = 1 mA
Voltage
Collector Dark Current
Collector Emitter Capacitance
Collector Light Current
Angle of Half Sensitivity
VCE = 20 V, E = 0
VCE = 5 V, f = 1 MHz, E = 0
lEe = 1 mW/cm2,
= 950 nm, VCE = 5 V
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time
Turn–Off Time
Cut–Off Frequency
lEe = 1 mW/cm2,
= 950 nm, IC = 0.1 mA
WVS = 5 V, IC = 5 mA,
RL = 100
WVS = 5 V, IC = 5 mA,
RL = 100
WVS = 5 V, IC = 5 mA,
RL = 100
Symbol
V(BR)CE
O
ICEO
CCEO
Ica
ϕ
ll0p.5
VCEsat
ton
toff
fc
Min
32
0.5
Typ Max
1 200
8
1.0
±12
825
620...960
0.3
4.8
5.0
120
Unit
V
nA
pF
mA
deg
nm
nm
V
ms
ms
kHz
Typical Characteristics (Tamb = 25_C unless otherwise specified)
125 104
100
103
75 VCE=20V
RthJA
102
50
101
25
0
0
94 8308
20 40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
100
20
94 8235
40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 2. Collector Dark Current vs. Ambient Temperature
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Document Number 81516
Rev. 2, 20-May-99

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2.0
1.8
VCE=5V
l1.6 Ee=1mW/cm2
=950nm
1.4
1.2
1.0
0.8
0.6
0
94 8239
20 40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 3. Relative Collector Current vs.
Ambient Temperature
10
1
0.1
lVCE=5V
0.01 =950nm
0.001
0.01
94 8313
0.1 1
Ee – Irradiance ( mW / cm2 )
10
Figure 4. Collector Light Current vs. Irradiance
10
l=950nm
1
Ee=1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
0.1
0.1
1
10 100
94 8242
VCE – Collector Emitter Voltage ( V )
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
BPW17N
Vishay Telefunken
20
16 f=1MHz
12
8
4
0
0.1 1
10 100
94 8240
VCE – Collector Emitter Voltage ( V )
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
12
10 VCE=5V
WRL=100
l=950nm
8
6
4 toff
2 ton
0
0 4 8 12 16
94 8238
IC – Collector Current ( mA )
Figure 7. Turn On/Turn Off Time vs. Collector Current
1.0
0.8
0.6
0.4
0.2
0
400
94 8241
600 800 1000
l – Wavelength ( nm )
Figure 8. Relative Spectral Sensitivity vs. Wavelength
Document Number 81516
Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
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