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Silicon NPN Phototransistor
Description
BPW17N is a silicon NPN epitaxial planar photo-
transistor in a miniature plastic case with a ± 12° lens.
With a lead center to center spacing of 2.54mm and a
package width of 2.4mm the devices are easily stack-
able on PC boards and assembled to arrays of
unlimited size.
Due to its waterclear epoxy the device is sensitive to
visible and near infrared radiation.
Features
D Miniature T–¾ clear plastic package with lens
D Narrow viewing angle ϕ = ± 12°
D Insensitive against background light due to nar-
row aperture
D Suitable for 0.1” (2.54 mm) center to center spac-
ing
D Suitable for visible and near infrared radiation
D Compatible with IR diode CQY37N
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
xtp/T = 0.5, tp 10 ms
xTamb 55 °C
xt 3 s
BPW17N
Vishay Telefunken
94 8639
Symbol
VCEO
VECO
IC
ICM
Ptot
Tj
Tstg
Tsd
RthJA
Value
32
5
50
100
100
100
–55...+100
260
450
Unit
V
V
mA
mA
mW
°C
°C
°C
K/W
Document Number 81516
Rev. 2, 20-May-99
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BPW17N
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Test Conditions
Collector Emitter Breakdown IC = 1 mA
Voltage
Collector Dark Current
Collector Emitter Capacitance
Collector Light Current
Angle of Half Sensitivity
VCE = 20 V, E = 0
VCE = 5 V, f = 1 MHz, E = 0
lEe = 1 mW/cm2,
= 950 nm, VCE = 5 V
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time
Turn–Off Time
Cut–Off Frequency
lEe = 1 mW/cm2,
= 950 nm, IC = 0.1 mA
WVS = 5 V, IC = 5 mA,
RL = 100
WVS = 5 V, IC = 5 mA,
RL = 100
WVS = 5 V, IC = 5 mA,
RL = 100
Symbol
V(BR)CE
O
ICEO
CCEO
Ica
ϕ
ll0p.5
VCEsat
ton
toff
fc
Min
32
0.5
Typ Max
1 200
8
1.0
±12
825
620...960
0.3
4.8
5.0
120
Unit
V
nA
pF
mA
deg
nm
nm
V
ms
ms
kHz
Typical Characteristics (Tamb = 25_C unless otherwise specified)
125 104
100
103
75 VCE=20V
RthJA
102
50
101
25
0
0
94 8308
20 40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
100
20
94 8235
40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 2. Collector Dark Current vs. Ambient Temperature
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Document Number 81516
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2.0
1.8
VCE=5V
l1.6 Ee=1mW/cm2
=950nm
1.4
1.2
1.0
0.8
0.6
0
94 8239
20 40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 3. Relative Collector Current vs.
Ambient Temperature
10
1
0.1
lVCE=5V
0.01 =950nm
0.001
0.01
94 8313
0.1 1
Ee – Irradiance ( mW / cm2 )
10
Figure 4. Collector Light Current vs. Irradiance
10
l=950nm
1
Ee=1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
0.1
0.1
1
10 100
94 8242
VCE – Collector Emitter Voltage ( V )
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
BPW17N
Vishay Telefunken
20
16 f=1MHz
12
8
4
0
0.1 1
10 100
94 8240
VCE – Collector Emitter Voltage ( V )
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
12
10 VCE=5V
WRL=100
l=950nm
8
6
4 toff
2 ton
0
0 4 8 12 16
94 8238
IC – Collector Current ( mA )
Figure 7. Turn On/Turn Off Time vs. Collector Current
1.0
0.8
0.6
0.4
0.2
0
400
94 8241
600 800 1000
l – Wavelength ( nm )
Figure 8. Relative Spectral Sensitivity vs. Wavelength
Document Number 81516
Rev. 2, 20-May-99
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BPW17N
Vishay Telefunken
0° 10 20
°°
30°
40°
1.0
0.9 50°
0.8 60°
0.7 70°
80°
0.6 0.4 0.2 0 0.2 0.4 0.6
94 8243
Figure 9. Relative Radiant Sensitivity vs.
Angular Displacement
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96 12187
Document Number 81516
Rev. 2, 20-May-99

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Ozone Depleting Substances Policy Statement
BPW17N
Vishay Telefunken
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 81516
Rev. 2, 20-May-99
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