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BPW38
HERMETIC SILICON PHOTODARLINGTON
PACKAGE DIMENSIONS
0.209 (5.31)
0.184 (4.67)
0.030 (0.76)
NOM
0.255 (6.48)
0.50 (12.7)
MIN
Base
Emitter
0.040 (1.02)
0.040 (1.02)
45°
0.020 (0.51) 3X
0.100 (2.54)
0.050 (1.27)
Collector
(Case)
Ø0.100 (2.54)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
FEATURES
• Hermetically sealed package
• Narrow reception angle
• European “Pro Electron” registered
DESCRIPTION
• The BPW38 is a silicon photodarlington
mounted in narrow angle TO-18 package.
SCHEMATIC
C
B
E
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of
940 nm.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(3,4,5 and 6)
Soldering Temperature (Flow)(3,4 and 6)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Power Dissipation (TA = 25°C)(1)
Power Dissipation (TC = 25°C)(2)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
VCEO
VCBO
VEBO
PD
PD
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
25
25
12
300
600
Unit
°C
°C
°C
°C
V
V
V
mW
mW
2001 Fairchild Semiconductor Corporation
DS300280 3/15/01
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www.fairchildsemi.com

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BPW38
HERMETIC SILICON PHOTODARLINGTON
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
Collector-Emitter Breakdown
Emitter-Base Breakdown
Collector-Base Breakdown
Collector-Emitter Leakage
Reception Angle at 1/2 Sensitivity
IC = 10 mA, Ee = 0
IE = 100 µA, Ee = 0
IC = 100 µA, Ee = 0
VCE = 12 V, Ee = 0
BVCEO
BVEBO
BVCBO
ICEO
0
25
12
25
——V
——V
——V
— 100 nA
±8 — Deg.
On-State Collector Current
Rise Time
Fall Time
Ee = 0.125 mW/cm2
VCE = 5 V(7)
IC(ON)
7.5
— mA
IC = 10 mA, VCC = 10 V
RL = 100 1
tr
— 300 — µs
IC = 10 mA, VCC = 10 V
RL = 100 1
tf
— 250 — µs
TYPICAL PERFORMANCE CURVES
100
Ee = 5.0 mW/cm2
Ee = 2.0 mW/cm2
Ee = 1.0 mW/cm2
10
Ee = 0.5 mW/cm2
Ee = 0.2 mW/cm2
1.0
Ee = 0.1 mW/cm2
Ee = 0.05 mW/cm2
Normalized to:
VCE = 5 V
0.1 Ee = .2 mW/cm2
0 5 10 15 20 25 30 35
VCE - COLLECTOR TO EMITTER (V)
Fig. 1 Light Current vs. Collector to Emitter Voltage
10
1.0
0.1
Normalized to:
VCE = 5 V
Ee = 0.2 mW/cm2
0.01
-50
-25
0
25 50 75 100 125
TA - TEMPERATURE (˚C)
Fig. 2 Relative Light Current vs. Ambient Temperature
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3/15/01 DS300280

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BPW38
HERMETIC SILICON PHOTODARLINGTON
TYPICAL PERFORMANCE CURVES
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
400
500 600 700 800 900 1000 1100 1200
D- WAVELENGTH - NANOMETERS
Fig. 3 Spectral Response Curve
110
100
90
80
70
60
50
40
30
20
10
0
-90˚ -70˚ -50˚ -30˚ -10˚ 10˚ 30˚ 50˚ 70˚ 90˚
DEGREES
Fig. 4 Angular Response
100
Load Resistance
101
Normalized to:
1001
RL = 1001
10 IL = 10 mA
1.0 10001
0.1
0.01
VCC = 10 V
0.1 1.0
10 100
RELATIVE SWITCHING SPEED
Fig. 5 Light Current vs. Relative Switching Speed
INPUT
LED
BPW38
VCC 1.0 V
I RL
OUTPUT
td
tr
90 %
OUTPUT
PULSE
10 %
tf
ts
INPUT PULSE
tON = td + tr
tOFF = ts + tf
Fig. 6 Test Circuit and Voltage Waveforms
DS300280 3/15/01
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