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Silicon PIN Photodiode
Description
BPW41N is a high speed and high sensitive PIN photo-
diode in a flat side view plastic package.
The epoxy package itself is an IR filter, spectrally
matched to GaAs or GaAs on GaAlAs IR emitters
(l p = 950 nm).
The large active area combined with a flat case gives
a high sensitivity at a wide viewing angle.
Features
D Large radiant sensitive area (A=7.5 mm2)
D Wide angle of half sensitivity ϕ = ± 65°
D High radiant sensitivity
D Fast response times
D Small junction capacitance
D Plastic case with IR filter (l=950 nm)
D Suitable for near infrared radiation
Applications
High speed photo detector
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
xTamb 25 °C
xt 5 s
BPW41N
Vishay Telefunken
94 8480
Symbol
VR
PV
Tj
Tstg
Tsd
RthJA
Value
60
215
100
–55...+100
260
350
Unit
V
mW
°C
°C
°C
K/W
Document Number 81522
Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
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BPW41N
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Breakdown Voltage
Test Conditions
mIR = 100 A, E = 0
Symbol Min
V(BR) 60
Typ Max Unit
V
Reverse Dark Current
VR = 10 V, E = 0
Iro
2 30 nA
Diode Capacitance
VR = 0 V, f = 1 MHz, E = 0
CD
70
pF
Open Circuit Voltage
Temp. Coefficient of Vo
Short Circuit Current
Temp. Coefficient of Ik
Reverse Light Current
VR = 3 V, f = 1 MHz, E = 0
lEe = 1 mW/cm2, = 950 nm
lEe = 1 mW/cm2, = 950 nm
lEe = 1 mW/cm2, = 950 nm
lEe = 1 mW/cm2, = 950 nm
lEe = 1 mW/cm2,
= 950 nm, VR = 5 V
CD
Vo
TKVo
Ik
TKIk
Ira
43
25
350
–2.6
38
0.1
45
40 pF
mV
mV/K
mA
%/K
mA
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Noise Equivalent Power
Rise Time
Fall Time
lVR = 10 V, = 950 nm
WVR = 10 V, RL = 1k ,
l = 820 nm
WVR = 10 V, RL = 1k ,
l = 820 nm
ϕ
ll0p.5
NEP
tr
tf
±65
950
870...1050
4x10–14
100
100
deg
nm
nm
W/Hz
ns
ns
Typical Characteristics (Tamb = 25_C unless otherwise specified)
1000
1.4
100
10
1
20 40
VR=10V
60 80
100
94 8403
Tamb – Ambient Temperature ( °C )
Figure 1. Reverse Dark Current vs. Ambient Temperature
l1.2 VR=5V
=950nm
1.0
0.8
0.6
0 20 40 60 80 100
94 8409
Tamb – Ambient Temperature ( °C )
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
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Document Number 81522
Rev. 2, 20-May-99

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1000
100
10
VR=5V
l=950nm
1
0.1
0.01
94 8414
0.1 1
Ee – Irradiance ( mW / cm2 )
10
Figure 3. Reverse Light Current vs. Irradiance
100
1 mW/cm2
0.5 mW/cm2
l=950nm
10
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
1
0.1 1
0.02 mW/cm2
10 100
94 8415
VR – Reverse Voltage ( V )
Figure 4. Reverse Light Current vs. Reverse Voltage
80
E=0
f=1MHz
60
40
20
0
0.1 1
10 100
94 8407
VR – Reverse Voltage ( V )
Figure 5. Diode Capacitance vs. Reverse Voltage
BPW41N
Vishay Telefunken
1.2
1.0
0.8
0.6
0.4
0.2
0
750
94 8408
850 950 1050
l – Wavelength ( nm )
1150
Figure 6. Relative Spectral Sensitivity vs. Wavelength
0° 10 20
°°
30°
40°
1.0
0.9 50°
0.8 60°
0.7 70°
80°
0.6 0.4 0.2 0 0.2 0.4 0.6
94 8406
Figure 7. Relative Radiant Sensitivity vs.
Angular Displacement
Document Number 81522
Rev. 2, 20-May-99
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BPW41N
Vishay Telefunken
Dimensions in mm
96 12195
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Document Number 81522
Rev. 2, 20-May-99

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Ozone Depleting Substances Policy Statement
BPW41N
Vishay Telefunken
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 81522
Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
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