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Silicon NPN Phototransistor
Description
BPW85 is a high speed and high sensitive silicon NPN
epitaxial planar phototransistor in a standard T–1 (ø 3
mm) plastic package. Due to its waterclear epoxy the
device is sensitive to visible and near infrared radi-
ation.
The viewing angle of ± 25° makes it insensible to ambi-
ent straylight.
Features
D Fast response times
D High photo sensitivity
D Standard T–1 (ø 3 mm ) clear plastic package
D Axial terminals
D Angle of half sensitivity ϕ = ± 25°
D Suitable for visible and near infrared radiation
D Selected into sensitivity groups
Applications
Detector in electronic control and drive circuits
BPW85
Vishay Telefunken
94 8396
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
xtp/T = 0.5, tp 10 ms
xTamb 55 °C
xt 3 s, 2 mm from case
Symbol
VCEO
VECO
IC
ICM
Ptot
Tj
Tstg
Tsd
RthJA
Value
70
5
50
100
100
100
–55...+100
260
450
Unit
V
V
mA
mA
mW
°C
°C
°C
K/W
Document Number 81531
Rev. 3, 16-Nov-99
www.vishay.de FaxBack +1-408-970-5600
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BPW85
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Test Conditions
Collector Emitter Breakdown IC = 1 mA
Voltage
Collector Dark Current
Collector Emitter Capacitance
Angle of Half Sensitivity
VCE = 20 V, E = 0
VCE = 5 V, f = 1 MHz, E = 0
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time
Turn–Off Time
Cut–Off Frequency
lEe = 1 mW/cm2,
= 950 nm, IC = 0.1 mA
WVS = 5 V, IC = 5 mA,
RL = 100
WVS = 5 V, IC = 5 mA,
RL = 100
WVS = 5 V, IC = 5 mA,
RL = 100
Symbol
V(BR)CE
O
ICEO
CCEO
ϕ
ll0p.5
VCEsat
ton
toff
fc
Min
70
Typ Max
1
3
±25
850
620...980
200
0.3
2.0
2.3
180
Unit
V
nA
pF
deg
nm
nm
V
ms
ms
kHz
Type Dedicated Characteristics
Tamb = 25_C
Parameter
Test Conditions
lCollector Light Current Ee=1mW/cm2,
=950nm, VCE=5V
Type
BPW85A
BPW85B
BPW85C
Symbol Min Typ Max Unit
Ica 0.8 1.5 2.5 mA
Ica 1.5 2.5 4.0 mA
Ica 3.0 5.0 8.0 mA
Typical Characteristics (Tamb = 25_C unless otherwise specified)
125 104
100
103
75 VCE=20V
RthJA
102
50
101
25
0
0 20 40 60 80 100
94 8308
Tamb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs. Ambient Temperature
100
20 40 60 80 100
94 8304
Tamb – Ambient Temperature ( °C )
Figure 2. Collector Dark Current vs. Ambient Temperature
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Document Number 81531
Rev. 3, 16-Nov-99

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2.0
1.8
VCE=5V
1.6 Ee=1mW/cm2
l=950nm
1.4
1.2
1.0
0.8
0.6
0
94 8239
20 40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 3. Relative Collector Current vs.
Ambient Temperature
10
BPW85C
1
BPW85B
BPW85A
0.1
0.01
0.01
94 8271
VCE=5V
l=950nm
0.1 1
Ee – Irradiance ( mW / cm2 )
10
Figure 4. Collector Light Current vs. Irradiance
10
BPW 85 A
l=950nm
1
0.1
Ee=1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
0.01
0.1
1
10 100
94 8275
VCE – Collector Emitter Voltage ( V )
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
Document Number 81531
Rev. 3, 16-Nov-99
BPW85
Vishay Telefunken
10
BPW 85 B
1
0.1
Ee=1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
l=950nm
0.01
0.1
1
10 100
94 8276
VCE – Collector Emitter Voltage ( V )
Figure 6. Collector Light Current vs.
Collector Emitter Voltage
10
Ee=1 mW/cm2
0.5 mW/cm2
1 0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
0.1
0.01
0.1
94 8277
BPW 85 C
l=950nm
1 10 100
VCE – Collector Emitter Voltage ( V )
Figure 7. Collector Light Current vs.
Collector Emitter Voltage
10
f=1MHz
8
6
4
2
0
0.1 1
10 100
94 8294
VCE – Collector Emitter Voltage ( V )
Figure 8. Collector Emitter Capacitance vs.
Collector Emitter Voltage
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