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Silicon NPN Phototransistor
Description
BPW96 is a high speed and high sensitive silicon NPN
epitaxial planar phototransistor in a standard T–1¾
(ø 5 mm) package. Due to its waterclear epoxy the de-
vice is sensitive to visible and near infrared radiation.
The viewing angle of ± 20° makes it insensible to ambi-
ent straylight.
Features
D Fast response times
D High photo sensitivity
D Standard T–1¾ (ø 5 mm) clear plastic package
D Angle of half sensitivity ϕ = ± 20°
D Suitable for visible and near infrared radiation
D Selected into sensitivity groups
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
xtp/T = 0.5, tp 10 ms
xTamb 47 °C
xt 3 s
BPW96
Vishay Telefunken
94 8391
Symbol
VCEO
VECO
IC
ICM
Ptot
Tj
Tstg
Tsd
RthJA
Value
70
5
50
100
150
100
–55...+100
260
350
Unit
V
V
mA
mA
mW
°C
°C
°C
K/W
Document Number 81532
Rev. 3, 16-Nov-99
www.vishay.de FaxBack +1-408-970-5600
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BPW96
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Test Conditions
Collector Emitter Breakdown IC = 1 mA
Voltage
Collector Dark Current
Collector Emitter Capacitance
Angle of Half Sensitivity
VCE = 20 V, E = 0
VCE = 5 V, f = 1 MHz, E = 0
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time
Turn–Off Time
Cut–Off Frequency
lEe = 1 mW/cm2,
= 950 nm, IC = 0.1 mA
WVS = 5 V, IC = 5 mA,
RL = 100
WVS = 5 V, IC = 5 mA,
RL = 100
WVS = 5 V, IC = 5 mA,
RL = 100
Symbol
V(BR)CE
O
ICEO
CCEO
ϕ
ll0p.5
VCEsat
ton
toff
fc
Min
70
Typ Max
1
3
±20
850
620...980
200
0.3
2.0
2.3
180
Unit
V
nA
pF
deg
nm
nm
V
ms
ms
kHz
Type Dedicated Characteristics
Tamb = 25_C
Parameter
Test Conditions
lCollector Light Current Ee=1mW/cm2,
=950nm, VCE=5V
Type
BPW96A
BPW96B
BPW96C
Symbol Min Typ Max Unit
Ica 1.5 2.5 4.5 mA
Ica 2.5 4.5 7.5 mA
Ica 4.5 8 15 mA
Typical Characteristics (Tamb = 25_C unless otherwise specified)
200 104
160
120
RthJA
80
40
103
VCE=20V
102
101
0
0 20 40 60 80 100
94 8300
Tamb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
100
20 40 60 80 100
94 8304
Tamb – Ambient Temperature ( °C )
Figure 2. Collector Dark Current vs. Ambient Temperature
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Document Number 81532
Rev. 3, 16-Nov-99

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2.0
1.8
VCE=5V
l1.6 Ee=1mW/cm2
=950nm
1.4
1.2
1.0
0.8
0.6
0
94 8239
20 40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 3. Relative Collector Current vs.
Ambient Temperature
10
BPW 96 C
BPW 96 B
1
BPW 96 A
0.1
0.01
0.01
94 8296
lVCE=5V
=950nm
0.1 1
Ee – Irradiance ( mW / cm2 )
10
Figure 4. Collector Light Current vs. Irradiance
10
BPW 96 B
Ee=1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
1
0.1 mW/cm2
0.05 mW/cm2
0.1
0.1
94 8297
l=950nm
1 10 100
VCE – Collector Emitter Voltage ( V )
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
BPW96
Vishay Telefunken
10
8
f=1MHz
6
4
2
0
0.1 1
10 100
94 8301
VCE – Collector Emitter Voltage ( V )
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
8
VCE=5V
W6 RL=100
l=950nm
4
toff
2
ton
0
02
4
6 8 10 12 14
94 8293
IC – Collector Current ( mA )
Figure 7. Turn On/Turn Off Time vs. Collector Current
1.0
0.8
0.6
0.4
0.2
0
400
94 8348
600 800 1000
l – Wavelength ( nm )
Figure 8. Relative Spectral Sensitivity vs. Wavelength
Document Number 81532
Rev. 3, 16-Nov-99
www.vishay.de FaxBack +1-408-970-5600
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